IKW50N65EH5_15 [INFINEON]
650V DuoPack IGBT and full-rated diode High speed series fifth generation;
| 型号： | IKW50N65EH5_15 |
| 厂家： | 
Infineon |
| 描述： | 650V DuoPack IGBT and full-rated diode High speed series fifth generation 双极性晶体管 |
| 文件： | 总17页 (文件大小：1972K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀfull-ratedꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKW50N65EH5
650VꢀDuoPackꢀIGBTꢀandꢀfull-ratedꢀdiode
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀfull-rated
RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
G
E
•ꢀIGBTꢀcopackedꢀwithꢀfull-ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallel
diode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀSolarꢀconverters
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
1
2
Packageꢀpinꢀdefinition:
•ꢀPinꢀ1ꢀ-ꢀgate
•ꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
IKW50N65EH5
650V
50A
K50EEH5
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
80.0
50.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
200.0
200.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
80.0
50.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
200.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
275.0
138.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.55
0.63
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) Defined by design. Not subject to production test.
4
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.65 2.10
1.85
1.95
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.35 1.70
Diode forward voltage
VF
V
V
1.33
1.30
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
1.0
2000.0
50.0 µA
-
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
62.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
3000
90
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
12
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
120.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
25
29
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
172
35
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.50
0.50
2.00
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
24
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
173
15
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.57
0.16
0.73
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
81
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
1.10
17.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1000
-
A/µs
Cσꢀ=ꢀ25pF
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
56
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Cσꢀ=ꢀ25pF
Qrr
0.70
19.7
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1500
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
24
30
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
190
30
ns
ns
Turn-on energy
Eon
Eoff
Ets
2.00
0.60
2.60
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
14
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
203
20
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.95
0.25
1.20
mJ
mJ
mJ
6
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
108
2.60
36.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Cσꢀ=ꢀ25pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2000
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
98
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Cσꢀ=ꢀ25pF
Qrr
1.80
28.8
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1500
-
A/µs
7
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
100
10
1
300
250
200
150
100
50
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
90
80
70
60
50
40
30
20
10
0
150
VGE = 20V
135
18V
15V
120
12V
105
10V
90
75
60
45
30
15
0
8V
7V
6V
5V
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
8
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
150
135
120
105
90
150
VGE = 20V
18V
15V
12V
10V
8V
Tvj = 25°C
Tvj = 150°C
135
120
105
90
75
60
45
30
15
0
7V
75
6V
60
5V
45
30
15
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2
3
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
4.0
1000
100
10
IC = 25A
IC = 50A
IC = 100A
td(off)
tf
td(on)
tr
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
9
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=50A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
11
10
9
typ.
min.
max.
Eoff
Eon
Ets
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.5mA)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,
dynamic test circuit in Figure E)
10
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
7
6
5
4
3
2
1
0
3.0
Eoff
Eon
Ets
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=50A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
3.5
16
Eoff
Eon
VCE = 130V
VCE = 520V
Ets
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
4
2
0
200
250
300
350
400
450
500
0
20
40
60
80
100
120
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=50A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=50A)
11
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Cies
Coes
Cres
i:
1
2
3
4
5
6
ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3
τi[s]:
2.5E-5 2.3E-4
2.1E-3
0.012197 0.104256 1.840158
1
0.001
1E-7
0
5
10
15
20
25
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
180
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
160
D = 0.5
140
120
100
80
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
60
40
20
i:
1
2
3
4
5
6
ri[K/W]: 0.013431 0.146325 0.159015 0.278506 0.025538 2.1E-3
τi[s]:
2.6E-5
2.1E-4
2.0E-3
0.01147 0.091987 1.834403
0.001
1E-7
0
500
1E-6
1E-5
1E-4
0.001
0.01
0.1
700
900
1100
1300
1500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
70
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
60
50
40
30
20
10
0
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
-1000
-2000
-3000
-4000
-5000
-6000
-7000
-8000
-9000
-10000
150
Tvj = 25°C
Tvj = 150°C
135
120
105
90
75
60
45
30
15
0
Tvj = 25°C, IF = 50A
-11000
Tvj = 150°C, IF = 50A
-12000
-13000
500
700
900
1100
1300
1500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
13
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
IF = 25A
IF = 50A
IF = 100A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
14
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO247-3
15
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
16
Rev.ꢀ2.1,ꢀꢀ2015-05-20
IKW50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IKW50N65EH5
Revision:ꢀ2015-05-20,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2015-05-20 Final data sheet
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and/orꢀautomotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineon
Technologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,
automotive,ꢀaviationꢀandꢀaerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLife
supportꢀdevicesꢀorꢀsystemsꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustain
and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
17
Rev.ꢀ2.1,ꢀꢀ2015-05-20
相关型号：
IKW50N65ES5XKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
INFINEON
IKW50N65H5AXKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
INFINEON
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