IKZ75N65EH5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKZ75N65EH5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总16页 (文件大小：2169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKZ75N65EH5
650VꢀDuoPackꢀIGBTꢀandꢀdiode
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀUltraꢀlowꢀlossꢀswitchingꢀthanksꢀtoꢀKelvinꢀemitterꢀpinꢀin
combinationꢀwithꢀTRENCHSTOPTMꢀ5
•ꢀBest-in-classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
•ꢀSolarꢀstringꢀinverters
Packageꢀpinꢀdefinition:
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀEꢀ-ꢀemitter
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter
•ꢀPinꢀGꢀ-ꢀgate
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
IKZ75N65EH5
650V
75A
K75EEH5
PG-TO247-4
2
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
90.0
75.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
95.0
85.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
395.0
197.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.38
0.46
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) Defined by design. Not subject to production test.
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ100°C
650
-
-
V
V
-
-
-
1.65 2.10
1.82
1.90
-
-
Tvjꢀ=ꢀ150°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ100°C
Tvjꢀ=ꢀ150°C
-
-
-
1.35 1.70
Diode forward voltage
VF
V
V
1.33
1.30
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.75mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
75.0 µA
-
3300.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
104.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4300
130
16
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
166.0
13.0
-
-
nC
nH
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
26
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ18.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
347
15
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.68
0.43
1.11
mJ
mJ
mJ
Turn-off energy
Total switching energy
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
58
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ37.5A,
diF/dtꢀ=ꢀ1500A/µs
Qrr
1.02
29.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2800
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
24
13
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ18.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
400
15
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.10
0.48
1.58
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
91
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ37.5A,
Qrr
2.58
42.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1845
-
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
400
350
300
250
200
150
100
50
100
10
1
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
100
90
80
70
60
50
40
30
20
10
0
300
VGE = 19V
270
18V
15V
240
14V
210
11V
180
150
120
90
9V
8V
7V
5V
60
30
0
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
300
270
240
210
180
150
120
90
300
VGE = 19V
17V
Tvj = 25°C
Tvj = 175°C
270
15V
240
210
180
150
120
90
11V
9V
8V
60
60
30
30
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3
4
5
6
7
8
9
10
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.25
1000
100
10
IC = 20A
IC = 37.5A
IC = 75A
2.00
1.75
1.50
1.25
1.00
0.75
0.50
td(off)
tf
td(on)
tr
1
25
50
75
100
125
150
175
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1000
td(off)
tf
td(on)
tr
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
1
0
10
20
30
40
50
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=37.5A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
9
8
7
6
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.75mA)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,
dynamic test circuit in Figure E)
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IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.8
Eoff
Eon
Ets
Eoff
Eon
Ets
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
VGE=0/15V,ꢀIC=37.5A,ꢀdynamicꢀtestꢀcircuitꢀin
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
Figure E)
test circuit in Figure E)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
16
14
12
10
8
Eoff
Eon
Ets
VCE = 130V
VCE = 520V
6
4
2
0
200
250
300
350
400
0
20
40
60
80 100 120 140 160 180
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
Figure 16. Typicalꢀgateꢀcharge
(IC=75A)
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Cies
Coes
Cres
1E+4
1000
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]:
2.8E-5
2.3E-4
2.3E-3
0.013145 0.113481 1.869237
10
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
110
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
100
90
80
70
60
50
40
30
20
10
0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]:
1.0E-5 3.0E-5
2.2E-4
2.2E-3
0.01247 0.10291 1.85641
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1000 1500 2000 2500 3000 3500 4000 4500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
11
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
90
80
70
60
50
40
30
20
10
0
1000 1500 2000 2500 3000 3500 4000 4500
1000 1500 2000 2500 3000 3500 4000 4500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
300
Tvj = 25°C, IF = 37.5A
Tvj = 25°C
Tvj = 150°C, IF = 37.5A
Tvj = 175°C
-1
270
-2
-3
-4
-5
-6
-7
-8
-9
240
210
180
150
120
90
60
30
-10
0
1000 1500 2000 2500 3000 3500 4000 4500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1.75
1.50
1.25
1.00
0.75
0.50
IF = 20A
IF = 37.5A
IF = 75A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
14
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
parasitic
relief
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
15
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ75N65EH5
High speed series fifth generation
Revision History
IKZ75N65EH5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-10-17 Preliminary data sheet
2014-10-31 Final data sheet
1.1
2.1
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81726 München, Germany
© 2014 Infineon Technologies AG
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16
Rev. 2.1, 2014-10-31
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