IM67D130A [INFINEON]
Our new Infineon XENSIV™ IM67D130A is a high performance digital MEMS microphone, qualified according to automotive standard, AEC-Q103-003.;
| 型号： | IM67D130A |
| 厂家： | 
Infineon |
| 描述： | Our new Infineon XENSIV™ IM67D130A is a high performance digital MEMS microphone, qualified according to automotive standard, AEC-Q103-003. |
| 文件： | 总22页 (文件大小：1293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
Features
•
Dynamic range of 103dB for best speech performance
-
-
-
Signal to noise ratio of 67dB(A) SNR
<1% total harmonic distortions up to high SPL levels
Acoustic overload point at 130dBSPL
•
•
•
Automotive qualification
Close sensitivity and phase matching for use in arrays
Flat frequency response with low frequency roll off and very fast analog to digital conversion speed for best
ANC performance
•
•
Digital PDM output
Extended availability to match automotive design cycles
Product validation
Technology qualified for industrial applications.
Product qualified according to AEC-Q103-003.
Potential applications
•
•
•
•
•
•
Hands free calling
Emergency call
Voice control
Active noise cancellation / Road noise cancellation (ANC/RNC)
Siren detection
Road condition detection
Ordering Information
Table 1
Order information
Product name
Package
Marking
Ordering code
IM67D130A
PG-LLGA-5-4
IM67DA
SP005582032
Datasheet
Please read the Important Notice and Warnings at the end of this document
Rev 1.00
www.infineon.com
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
Product description
The device is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions
and a high acoustic overload point is required.
Infineon's Dual Backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar
as utilized in studio condenser microphones and results in high linearity of the output signal within a high
dynamic range. The microphone distortion does not exceed 1% even up to very high sound pressure levels.
With its low equivalent noise floor the microphone is no longer the limiting factor in the audio signal chain and
enables higher performance of voice recognition algorithms.
The digital microphone ASIC contains an extremely low-noise preamplifier and a high-performance sigma-delta
ADC. Different power modes can be selected in order to suit specific current consumption requirements.
The tight manufacturing tolerance, combined with the fact that each device is calibrated with an advanced
Infineon calibration algorithm, results in small sensitivity and phase matching tolerances. This makes it a
perfect device for beam forming arrays and multi-microphone applications.
Datasheet
2
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
Table of contents
Table of contents
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
2
3
Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Free field frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical parameters and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.1
4.2
4.2.1
4.2.2
4.2.3
4.2.4
5
5.1
5.2
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Use cases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Typical stereo application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Reflow soldering and board assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
6.1
6.2
6.3
6.4
7
8
Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Datasheet
3
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
1 Typical performance characteristics
1
Typical performance characteristics
Test conditions: VDD = 1.8V, fCLK = 3.072 MHz, no load on DATA
10
8
10
1
6
4
2
0
-2
-4
-6
-8
-10
0,1
0,01
10
100
1000
10000
90
95
100
105
110
115
120
125
130
135
Frequency [Hz]
Input Sound Pressure Level [dB]
Plot 1: Typical free field response
Plot 2: Typical THD vs. SPL
40
35
30
25
20
15
10
5
1.000
100
10
1
0
-5
-10
10
100
1000
100
1000
Frequency [Hz]
Frequency [Hz]
Plot 3: Typical phase response vs. frequency
Plot 4: Typical group delay vs. frequency
1200
1000
800
600
400
200
0
-110
-115
-120
-125
-130
-135
-140
-145
-150
-155
fclock=3.072MHz
fclock=2.4MHz
fclock=1.536MHz
fclock=768kHz
10
100
1000
10000
1,6
2,1
2,6
3,1
3,6
Frequency [Hz]
VDD [V]
Plot 5: IDD vs. VDD
Plot 6: Typical noise floor (unweighted)
Figure 1
Typical performance characteristics
Datasheet
4
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
2 Block diagram
2
Block diagram
VDD
MEMS BIAS
CHARGE PUMP
VOLTAGE REGULATORS
DATA
LR
BACKPLATE 1
1-BIT
PDM
INTERFACE
DIGITAL SIGNAL
PROCESSING
MEMBRANE
BACKPLATE 2
ADC
AMP
CLOCK
MEMS
POWER
MODE
DIGITAL CORE
DETECTOR
CALIBRATION
COEFFICIENTS
ASIC
GROUND
Figure 2
Block diagram
Datasheet
5
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
3 Pin configuration
3
Pin configuration
The figure below shows the pin configuration of the device
1
2
5
3
4
Bottom view
Figure 3
Table 2
Pin configuration
Pin configuration
Pin number
Name
DATA
VDD
Description
PDM data output
Power supply
1
2
3
4
5
CLOCK
LR
PDM clock input
PDM leꢀ/right select
Ground
GND
Datasheet
6
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
4
General product characteristics
4.1
Acoustic characteristics
Test conditions (unless otherwise specified in the table): VDD = 1.8V±0.1V, fCLK = 3.072MHz, TA = 25°C±5°C, audio
bandwidth 20Hz to 20kHz, LR pin grounded, no load on DATA, tCR = tCF = 9ns
Table 3
Acoustic specifications
Parameter
Symbol
Min.
Values
Typ.
Unit
Note or condition
Max.
-35
Sensitivity
Sens
-37
-36
dBFS
1kHz, 94 dBSPL, all operating
modes
Acoustic Overload
Point
AOP
-
-
-
130
67
-
-
-
dBSPL THD = 10%, all operating modes
Signal to Noise Ratio, SNR
fCLK=3.072MHz
dB(A)
dB(A)
A-Weighted
A-Weighted
Signal to Noise Ratio, SNRM2
fCLK=2.4MHz
67
Signal to Noise Ratio, SNRM3
fCLK=1.536MHz
-
-
66
64
-
-
dB(A)
dB(A)
A-Weighted
Signal to Noise Ratio, SNRLPM
fCLK=768kHz
20Hz to 8kHz bandwidth, A-
Weighted
Noise Floor, fCLK =
3.072MHz
NF
-
-
-
-103
-103
-102
-
-
-
dBFS(A) A-Weighted
dBFS(A) A-Weighted
dBFS(A) A-Weighted
Noise Floor - Mode2, NFM2
fCLK = 2.4MHz
Noise Floor - Mode3, NFM3
fCLK = 1.536MHz
Noise Floor - LPM,
fCLK = 768kHz
NFLPM
THD94
THD128
THD129
-
-
-
-
-100
0.5
-
-
-
-
dBFS(A) 20Hz to 8kHz bandwidth, A-
Weighted
Total Harmonic
Distortion, 94dBSPL
%
%
%
Measuring 2nd to 5th harmonics;
1kHz, all operating modes
Total Harmonic
Distortion, 128dBSPL
1.0
Measuring 2nd to 5th harmonics;
1kHz, all operating modes
Total Harmonic
Distortion, 129dBSPL
2.0
Measuring 2nd to 5th harmonics;
1kHz, all operating modes
Total Harmonic
Distortion, 130dBSPL
THD130
fC_LP
-
-
10.0
28
-
-
%
Measuring 2nd to 5th harmonics;
1kHz, all operating modes
Low Frequency
Hz
-3dB point relative to 1kHz
Cutoff Point
(table continues...)
Datasheet
7
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
Table 3
(continued) Acoustic specifications
Parameter
Symbol
Values
Typ.
Unit
Note or condition
Min.
Max.
Group Delay, 250Hz tgd_250
Group Delay, 600Hz tgd_600
-
-
-
70
-
-
-
µs
µs
µs
15
6
Group Delay, 1kHz
tgd_1000
Group Delay, 4kHz
tgd_4000
Φ75
-
-
1
-
-
µs
°
Phase Response,
75Hz
19
Phase Response,
1kHz
Φ1000
Φ3000
-
-
2
-
-
°
°
Phase Response,
3kHz
-1
Directivity: The device has an omnidirectional pickup pattern.
Polarity: The device has a positive polarity. Positive pressure increases density of 1's, negative pressure
decreases density of 1's in data output)
4.1.1
Free field frequency response
12
10
8
Upper Limit (dB)
Lower Limit (dB)
6
4
2
0
-2
-4
-6
-8
-10
-12
10
100
1000
10000
Frequency (Hz)
Figure 4
Free field frequency response
Datasheet
8
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
Table 4
Free field frequency response, normalized to 1kHz sensitivity value
Frequency (Hz)
Upper Limit (dB)
Lower Limit (dB)
25
60
-2
+0.5
+1
0
-5
-1.5
-1
800
1000
1200
6000
8000
15000
0
+1
+1
+4
+9
-1
-2
-2
-2
4.2
Electrical parameters and characteristics
4.2.1
Absolute maximum ratings
Table 5
Absolute maximum ratings
Parameter
Symbol
Values
Typ.
Unit
Note or condition
Min.
Max.
Voltage on any Pin
Vmax
-
-
-
4
V
Storage Temperature TS
-40
125
°C
Attention: Stresses above those listed under “Absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the section "Functional range" of this datasheet is not
implied. Furthermore, only single error cases are assumed. More than one stress/error case may
also damage the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. During absolute maximum rating overload conditions the voltage on VDD pins with
respect to ground (GND) must not exceed the values defined by the absolute maximum ratings.
Lifetime statements are an anticipation based on an extrapolation of Infineon’s qualification
test results. The actual lifetime of a component depends on its form of application and type of
use etc. and may deviate from such statement. Lifetime statements shall in no event extend the
agreed warranty period.
Datasheet
9
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
4.2.2
Functional range
Functional range
Symbol
Table 6
Parameter
Values
Typ.
Unit
Note or condition
Min.
1.62
Max.
3.60
Supply Voltage
VDD
-
-
V
A 100nF bypass capacitor
should be placed close to the
microphone's VDD pin to ensure
best SNR performance
Ambient operating
temperature
TA
-40
2.9
2.1
1.05
400
-
+105
3.3
°C
Clock Frequency
Range, HPM
fCLK_HPM
fCLK_M2
fCLK_M3
fCLK_LPM
fCLK_sb
3.072
2.4
MHz
MHz
MHz
kHz
kHz
Clock Frequency
Range, Mode2
2.65
1.9
Clock Frequency
Range, Mode3
1.536
768
-
Clock Frequency
Range, LPM
950
250
Clock Frequency
Range, Standby
mode
DATA = high-Z
PDM Clock
Frequency
fCLK
0.4
-
3.30
MHz
VDD Ramp-up Time VDD_ru
-
-
-
-
50
60
52
ms
%
Time until VDD ≥ VDD_min
fCLK < 2.65MHz
Clock Duty Cycle
CLKduty
40
Clock Duty Cycle,
High performance
mode
CLKduty_HPM 48
%
fCLK ≥ 2.9MHz
Clock Rise/Fall Time tCR / tCF
Input Logic Low Level VIL
-
-
-
-
13
ns
V
-0.3
0.35xVDD
VDD+0.3
Input Logic High
Level
VIH
0.65xVDD
V
Output Load
Cload
-
-
200
pF
Capacitance on DATA
4.2.3
Electrical characteristics
Test conditions (unless otherwise specified in the table): VDD = 1.8V ± 0.1V, TA = 25°C ± 5°C
Datasheet
10
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
Table 7
General electrical characteristics
Parameter
Symbol
Values
Typ.
Unit
Note or condition
Min.
Max.
1300
Current
Consumption, HPM
IDD_HPM
IDD_M2
-
-
980
μA
μA
No load on DATA
No load on DATA
Current
800
1050
Consumption, Mode2
Current
Consumption, Mode3
IDD_M3
IDD_LPM
Istandby
-
-
-
620
300
25
800
380
50
μA
μA
μA
No load on DATA
No load on DATA
No load on DATA
Current
Consumption, LPM
Current
Consumption,
Standby mode
Current
Consumption, Clock
off mode
Iclock_off
-
-
1
μA
CLOCK pulled low
Grounded DATA pin
Short Circuit Current Ishort
1
-
-
20
-
mA
Power Supply
Rejection
PSR1k_NM
-80
dBFS
100mVpp sine wave on VDD swept
from 200Hz to 20kHz
Power Supply
Rejection
PSR217_NM
-
-
-86
-
-
dBFS(A) 100mVrms, 217Hz square wave on
VDD, A-weighted
Startup Time, ±0.5dB tstart-up
sensitivity accuracy
20
ms
ms
ms
ms
Time to start up in all operating
modes aꢀer VDD_min and CLOCK
have been applied
Startup Time, ±0.2dB tstart-up_HP
sensitivity accuracy
-
-
-
-
-
-
50
20
50
Time to start up in all operating
modes aꢀer VDD_min and CLOCK
have been applied
Mode Switch Time,
±0.5dB sensitivity
accuracy
tmode-switch
Time to switch between
operating modes. VDD remains on
during the mode switch
Mode Switch Time,
±0.2dB sensitivity
accuracy
tmode-
switch_HP
Time to switch between
operating modes. VDD remains on
during the mode switch
Hysteresis Width
Vhys
VOL
VOH
0.1xVDD
-
-
-
-
0.29xVDD
0.3xVDD
-
V
V
V
Output Logic Low
Level
Iout= 2mA
Iout= 2mA
Output Logic High
Level
0.7xVDD
(table continues...)
Datasheet
11
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
4 General product characteristics
Table 7
(continued) General electrical characteristics
Parameter
Symbol
Values
Typ.
Unit
Note or condition
Min.
40
Max.
80
Delay Time for DATA tDD
Driven
-
-
ns
ns
Delay time from CLOCK edge
(0.5xVDD) to DATA driven
Delay Time for DATA tHZ
High-Z
5
-
30
Delay time from CLOCK edge
(0.5xVDD) to DATA high impedance
state 1)
Delay Time for DATA tDV
Valid
-
100
ns
Delay time from CLOCK edge
(0.5xVDD) to DATA valid (<0.3xVDD
2)
or >0.7xVDD
)
4.2.4
Timing diagram
Figure 5
Timing diagram
1
tHZ is dependent upon Cload
Load on DATA: Cload = 100pF, Rload = 100kΩ
2
Datasheet
12
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
5 Application information
5
Application information
5.1
Use cases
•
Total Harmonic Distortion (THD) below 1% up to high sound pressure levels (SPL)
-
-
-
Clear speech in a wide dynamic range
Reliable voice commands during high background noise
Effective active noise cancellation even close to loud noise source
•
•
High Signal to Noise Ratio (SNR)
-
-
-
-
Far field audio signal pick-up
Low volume audio and whispered voice capturing
Good performance with speech recognition algorithms
Microphone noise is no longer limiting the audio chain
Close sensitivity and phase matching
-
-
-
Good performance in audio beamforming
High and precise attenuation of background noise
Full utilization of voice algorithms capability
•
•
Flat frequency response with low fC_LP (low frequency cutoff point) and small group delay
-
-
Good performance in active noise cancellation systems
Excellent speech quality over full frequency range
Power optimized modes
-
-
Low current consumption for always on applications
Long operating time of battery powered devices
Datasheet
13
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
5 Application information
5.2
Typical stereo application circuit
VDD
MIC 2
MIC 1
CVDD
CVDD
VDD
VDD
LR
LR
GND
GND
DATA
DATA
CLK
CLK
DATA
CLK
CODEC
Figure 6
Typical stereo application circuit
Note:
For best performance it is strongly recommended to place a 100nF (CVDD_typical) capacitor between
VDD and ground. The capacitor should be placed as close to VDD as possible. A termination resistor
(RTERM) of about 100Ω may be added to reduce the ringing and overshoot on the output signal.
Datasheet
14
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
6 Package information
6
Package information
This product is compliant to RoHS
6.1
Package outline
Figure 7
Package outline drawing
6.2
Footprint and stencil recommendation
The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS
microphone to ensure optimal performance. A PCB sound port size of radius 0.4 mm (diameter 0.8mm) is
recommended.
The board pad and stencil aperture recommendations shown in the figure below are based on Solder Mask
Defined (SMD) pads. The specific design rules of the board manufacturer should be considered for individual
design optimizations or adaptations.
Datasheet
15
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
6 Package information
Figure 8
Footprint and stencil recommendation
6.3
Reflow soldering and board assembly
Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture
sensitivity level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely
used reflow soldering using a forced convection oven is recommended.
The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to
reach an optimal solder joint quality. The reflow profile shown in the figure below is recommended for board
manufacturing with Infineon MEMS microphones.
Figure 9
Recommended reflow profile
Datasheet
16
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
6 Package information
Table 8
Reflow profile limits
Symbol
Profile feature
Pb-free assembly
150°C
Sn-Pb Eutectic assembly
100°C
Preheat temperature min.
Tsmin
Tsmax
ts
Preheat temperature max.
Preheat time (Tsmin to Tsmax
Ramp-up rate (TL to TP)
Liquidous temperature
Time maintained above TL
Peak temperature
200°C
150°C
)
60-120 seconds
3°C/second max.
217°C
60-120 seconds
3°C/second max.
183°C
TL
tL
60-150 seconds
260°C +0°C/-5°C
20-40 seconds
60-150 seconds
235°C +0°C/-5°C
10-30 seconds
TP
tP
Time within 5°C of actual peak
temperature (see note below)
Ramp-down rate
6°C/second max.
8 minutes max.
6°C/second max.
6 minutes max.
Time 25°C to peak temperature
t
Note:
Tolerance for peak profile temperature (Tp) is defined as a supplier minimum and a user maximum.
The MEMS microphones can be handled using industry standard pick and place equipment. Care should be
taken to avoid damage to the microphone structure as follows:
•
•
•
•
•
Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port
hole.
The microphone acoustic port hole should not be exposed to vacuum. This can destroy or damage the
MEMS.
Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port
hole must be sealed to prevent particle contamination.
It is recommended to perform the PCB assembly in a clean room environment in order to avoid
microphone contamination.
Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste
is recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be
severely damaged by cleaning substances.
•
•
To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to
cover the sound port with protective tape during PCB sawing or system assembly.
Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place
tools is recommended in order to limit the mechanical force exerted on the package.
Note:
For further information please consult the "General recommendation for assembly of Infineon
packages" document, which is available on the Infineon Technologies web page.
6.4
Packing
For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A
detailed drawing of the carrier can be seen in the figure below.
Datasheet
17
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
6 Package information
Figure 10
Tape dimensions
More information can be found on the Infineon website:
https://www.infineon.com/cms/en/product/packages/PG-LLGA/PG-LLGA-5-4/
Datasheet
18
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
7 Reliability specifications
7
Reliability specifications
The microphone sensitivity aꢀer stress and over temperature does not deviate by no more than +/- 3dB from
the initial value.
Table 9
Test
Qualification tests according to AEC-Q103-003
Stress condition
Standard
Temperature humidity bias
TA = +85°C, R.H. = 85%, VDD = 3.6V,
cyclical bias, 1000 hours
AEC Q100 Rev.H.
Temperature humidity storage
Temperature cycling
TA = +85°C, R.H = 85%, 1000 hours
AEC Q100 Rev.H.
AEC Q100 Rev.H.
TA = -55°C ... +125°C, 30 min cycle time,
1000cycles
High temperature storage life
High temperature operating life
Early life failure rate
TA = +125°C, 1000 hours
AEC Q100 Rev.H.
AEC Q100 Rev.H.
JESD22-A108
TA = +125°C, VDD = 3.6V, 1000 hours
TA = +125°C, VDD = 2.5V, 48 hours
Read out aꢀer stress at room temperature
Wire bond shear
Wire bond pull
Bump shear test
AEC Q100-001
-
-
-
-
MIL-STD883 Method 2011
JESD22-B102
Solderability
Physical dimensions
Solder ball shear
Mechanical shock
JESD22-B100 and B108
AEC Q103-003
3 pulses, 0.5msec duration, 10,000g peak
acceleration in x,y and z planes
JESD22-B104
Variable frequency vibration
20Hz to 2kHz to 20Hz (logarithmic variation) in JESD22-B103
12 minutes, 4x in each orientation, 20g peak
acceleration
Package drop
Die shear
10x on each of 6 axes (60 drops total) from a
high of 1.2m onto a concrete surface
AEC Q100 Rev.H.
-
MIL-STD-883 Method 2019
IEC 60068-2-38
Humidity and temperature cycle 5 cycles (24h/cycle)
Low temperature operating life
Low temperature storage
Endurance life test
TA = -40°C, VDD = 3.6V, 1000 hours
JESD22-A108
TA = -40°C, 1000 hours
JESD22-A119
96 hours at 130dB continuous signal
all pins, UESD = ±2000V
AEC Q103-003
Electrostatic discharge,
EIA/JESD22/A114
Human body model (HBM)
Electrostatic discharge,
Charged device model (CDM)
all pins, U = ±500V
ESD STM 5.3.1
IEC-61000-4-2
Electrostatic discharge,
SLT - Contact discharge
3 contact discharges of ±6kV to lid while
Vdd and fCLK are supplied according to the
operational modes; Vdd and fCLK ground is
separated from earth ground
(table continues...)
Datasheet
19
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
7 Reliability specifications
Table 9
Test
(continued) Qualification tests according to AEC-Q103-003
Stress condition
Standard
Electrostatic discharge,
SLT - Air discharge
3 air discharges of ±8kV to lid while Vdd and
fCLK are supplied according to the operational
modes; Vdd and fCLK ground is separated from
earth ground
IEC-61000-4-2
Latch-up
TA = 105°C, I = ±200mA
AEC Q100 Rev.H.
Electromagnetic compatibility
(EMC)
IC strip line radiated emmissions
IEC 61967-8 / Generic IC
EMC Test Specification 2.1
Datasheet
20
Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone
8 Revision history
8
Revision history
Table 10
Revision history
Document
version
Date of release Description of changes
1.00
18.05.2021
•
First released version
Datasheet
21
Rev 1.00
18-05-2021
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 18-05-2021
Published by
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Infineon Technologies AG
81726 Munich, Germany
©
2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-rhp1599122769309
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
相关型号：
IM68A130
The IM68A130 is a high performance, single-ended, analog MEMS microphone designed for applications which require a low LFRO (10Hz), a high SNR (low self-noise), and low distortion (high AOP).
INFINEON
IM69D127
IM69D127 is a digital high performance MEMS microphone based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. Its small size of only 3.60 x 2.50 x 1.00 mm3 makes it a perfect match for compact audio devices, such as TWS earbuds.
INFINEON
IM69D128S
Discover the IM69D128S – an ultra-low power digital XENSIVTM MEMS microphone, designed for applications which require high SNR (low self-noise), long battery life, and high reliability.
INFINEON
IM70A135
Infineon’s XENSIV™ MEMS analog microphone IM70A135 is a compact high-performance microphone with a very high acoustic overload point of 135 dBSPL and a size of only 3.50 x 2.65 x 1.00 mm3. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially suited for TWS earbud applications.
INFINEON
IM70D122
High performance digital XENSIVTM MEMS microphone IM70D122 makes the most out of Infineon´s Sealed Dual Membrane technology to meet a very high signal-to-noise ratio of 70 dB(A) and a very high sensitivity of -26 dBFS. Especially thanks to its high sensitivity and high SNR the IM70D122 is perfectly tailored for advanced audio capturing which can uplift the audio experience for laptops, tablets, cameras and conference systems. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level.
INFINEON
IM72D128
The IM72D128V01 is an ultra-high performance digital microphone designed for applications which require a very high SNR (low self-noise) and low distortions (high AOP). This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The flat frequency response (20Hz low-frequency roll-off) and tight manufacturing tolerance improve performance of multi-microphone (array) applications. Different power modes can be selected in order to suit specific clock frequency and current consumption requirements.
INFINEON
©2020 ICPDF网 联系我们和版权申明