IMBG120R090M1H [INFINEON]
是采用D2PAK-7L (TO-263-7)封装的1200 V, 90 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。;
| 型号： | IMBG120R090M1H |
| 厂家： | 
Infineon |
| 描述： | 是采用D2PAK-7L (TO-263-7)封装的1200 V, 90 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。 电机 驱动 |
| 文件： | 总17页 (文件大小：1257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMBG120R090M1H
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
with .XT interconnection technology
Features
Very low switching losses
Drain
TAB
Short circuit withstand time 3 µs
Fully controllable dV/dt
Gate
pin 1
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
Sense
pin 2
Source
pin 3...7
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Drives
Infrastructure – Charger
Energy generation - Solar string inverter and solar optimizer
Industrial power supplies - Industrial UPS
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Type
Key Performance and Package Parameters
VDS
ID
RDS(on
Tvj = 25°C, ID = 8.5A, VGS = 18V
Tvj,max
Marking
Package
PG-TO263-7
TC = 25°C, Rth(j-c,max)
IMBG120R090M1H 1200V
26A
90mΩ
175°C
12M1H090
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.2
2020-12-11
www.infineon.com
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................14
Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Final Datasheet
2 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
26
18
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse
65
DC body diode forward current for Rth(j-c,max)
,
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
A
A
V
28
16
1
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
ISD,pulse
65
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
Power dissipation, limited by Tvjmax
TC = 25°C
VGS
VGS,on
VGS,off
-7… 23
15… 18
0
µs
W
tSC
3
Ptot
136
68
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature
Reflow soldering (MSL1 according to JEDEC J-STD-020)
Tsold
260
°C
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Final Datasheet
3 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
0.82
max.
1.1
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
-
-
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
62
Final Datasheet
4 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
RDS(on)
VGS = 18V, ID = 8.5A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
-
-
-
90
114
170
125
-
-
mΩ
VGS = 15V, ID = 8.5A,
Tvj = 25°C
-
120
160
Body diode forward
voltage
VSD
VGS = 0V, ISD = 8.5A
Tvj = 25°C
Tvj = 100°C
-
-
-
4.1
4.0
3.9
5.2
-
-
V
Tvj = 175°C
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 3.7mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
V
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
-
-
-
-
-
0.5
1.6
-
165
-
µA
Gate-source leakage
current
IGSS
VGS = 23V, VDS = 0V
VGS = -7V, VDS = 0V
VDS = 20V, ID = 8.5A
f = 1MHz, VAC = 25mV
100
nA
nA
S
-
-100
Transconductance
gfs
4.7
9
-
-
Internal gate resistance
RG,int
Ω
Final Datasheet
5 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
763
39
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
4.3
15
23
Total gate charge
VDD = 800V, ID = 8.5A,
VGS = 0/18V, turn-on pulse
5.9
4.8
Gate to source charge
Gate to drain charge
QGS,pl
QGD
Final Datasheet
6 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 3
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 8.5A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
7.9
3.1
18
-
-
-
-
-
-
-
ns
µJ
Turn-off delay time
Fall time
10
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
96
20
116
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 8.5A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
127
1.9
-
-
Diode peak reverse
recovery current
Irrm
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 8.5A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
7.9
7.3
18
-
-
-
-
-
-
-
ns
µJ
Turn-off delay time
Fall time
10
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
144
24
168
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 8.5A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
158
2.5
-
-
Diode peak reverse
recovery current
Irrm
3 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Final Datasheet
7 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
80
60
40
20
0
160
140
120
100
80
not for linear use
60
40
20
0
0
25 50 75 100 125 150 175
0
400
800
1200
TC [ C]
VDS [V]
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
Figure 1
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
45
35
40
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
TC [ C]
TC [ C]
Figure 4
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
Figure 3
Maximum DC drain to source current as
a function of case temperature limited
by bond wire (IDS = f(TC))
Final Datasheet
8 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
120
6
5
4
3
2
1
0
Tvj=25°C
Tvj=175°C
90
60
30
0
0
5
10
15
20
-50
0
50
100
150
VGS [V]
Tvj [ C]
Figure 5
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Figure 6
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 3.7mA, VGS = VDS)
120
70
20V
18V
16V
15V
14V
12V
10V
8V
20V
18V
16V
15V
14V
12V
10V
8V
60
50
40
30
20
10
0
90
60
30
0
6V
6V
0
4
8
12
16
20
0
4
8
12
16
20
VDS [V]
VDS [V]
Figure 8
Typical output characteristic, VGS as
parameter
Figure 7
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
Final Datasheet
9 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
300
18
16
14
12
10
8
VGS = 18V
250
VGS = 15V
200
150
100
50
6
4
2
0
-2
0
0
5
10
15
20
25
-50
0
50
100 150
QG [nC]
Tvj [ C]
Figure 10 Typical gate charge
Figure 9
Typical on-resistance as a function of
junction temperature
(VGS = f(QG), IDS = 8.5A, VDS = 800V, turn-on
pulse)
(RDS(on) = f(Tvj), IDS = 8.5A)
6
5
4
3
2
1
0
1000
100
10
1
Ciss
Coss
Crss
1
10
100
1000
-50
0
50
100
150
VDS[V]
Tvj [ C]
Figure 11 Typical capacitance as a function of
drain-source voltage
Figure 12 Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=8.5A)
(C = f(VDS), VGS = 0V, f = 1MHz)
Final Datasheet
10 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
70
60
50
40
30
20
10
0
70
VGS=18V
VGS=18V
VGS=15V
60
VGS=15V
50
40
30
VGS=0V
VGS=0V
20
10
0
VGS=-2V
VGS=-2V
0
2
4
6
8
10
0
2
4
6
8
10
VSD [V]
VSD [V]
Figure 14 Typical body diode forward current as
function of forward voltage, VGS as
parameter
Figure 13 Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
210
400
Etot
Etot
180
Eon
Eon
Eoff
300
Eoff
150
120
90
200
100
0
60
30
0
25 50 75 100 125 150 175
0
5
10
15
20
Tvj [ C]
ID [A]
Figure 15 Typical switching energy losses as a
function of junction temperature
Figure 16 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at VGS
0V)
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 8.5A, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
=
Final Datasheet
11 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
600
80
60
40
20
0
td(on)
tr
Etot
Eon
Eoff
td(off)
tf
400
200
0
0
20
40
60
0
20
40
60
RG [Ohm]
RG [Ohm]
Figure 17 Typical switching energy losses as a
function of gate resistance
Figure 18 Typical switching times as a function of
gate resistor
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 8.5A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 8.5A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
20
0.5
0.4
0.3
0.2
T = 175°C
T = 25°C
15
10
5
0.1
0.0
T = 175°C
T = 25°C
0
0
2000
4000
6000
0
2000
4000
6000
diF /dt[A/µs]
diF /dt[A/µs]
Figure 20 Typical reverse recovery current as a
function of diode current slope
Figure 19 Typical reverse recovery charge as a
function of diode current slope
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 8.5A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 8.5A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Final Datasheet
12 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
1E1
1E0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
1E-1
1E-2
i:
1
2
3
4
ri: [K/W] 1.8E-01 5.5E-01 3.1E-01 6.2E-02
ti: [s] 1.7E-04 9.4E-03 1.6E-03 1.1E-05
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21 Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Final Datasheet
13 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
Figure 22
Package drawing
Final Datasheet
14 of 17
2.2
2020-12-11
IMBG120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Final Datasheet
15 of 17
2.2
2020-12-11
IMBG120R090M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.1
2.2
2020-09-01
2020-12-11
Final Datasheet
Correction of circuit symbol on page 1
Final Datasheet
16 of 17
2.2
2020-12-11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2020.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
相关型号：
IMBG120R140M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 140 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R220M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 220 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R350M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 350 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG65R022M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R022M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R030M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R030M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R057M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R083M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R083M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R163M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
©2020 ICPDF网 联系我们和版权申明