IMW120R045M1 [INFINEON]
1200 V, 45 mΩ的 CoolSiC™碳化硅MOSFET 采用TO247-3封装， 基于先进的沟槽半导体工艺，该工艺经过优化，兼具可靠性与性能优势。与IGBT和MOSFET等基于传统硅（Si）的开关相比，碳化硅MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。;
| 型号： | IMW120R045M1 |
| 厂家： | 
Infineon |
| 描述： | 1200 V, 45 mΩ的 CoolSiC™碳化硅MOSFET 采用TO247-3封装， 基于先进的沟槽半导体工艺，该工艺经过优化，兼具可靠性与性能优势。与IGBT和MOSFET等基于传统硅（Si）的开关相比，碳化硅MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。 开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极 半导体 |
| 文件： | 总17页 (文件大小：1380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMW120R045M1
IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Drain
pin 2
Features
Very low switching losses
Gate
pin 1
Threshold-free on state characteristic
Wide gate-source voltage range
Source
pin 3
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification
Temperature independent turn-off switching losses
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o
Solar string inverter and solar optimizer
Industrial power supplies
o
o
Industrial UPS
Industrial SMPS
Infrastructure – Charge
Charger
o
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Table 1
Type
Key Performance and Package Parameters
VDS
ID
RDS(on)
(Tvj = 25°C, ID = 20A, VGS = 15V)
Tj,max
Marking
120M1045
Package
(TC = 25°C, Rth(j-c,max)
)
IMW120R045M1
1200V
52A
45mΩ
175°C
PG-TO247-3
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.6
2020-12-11
www.infineon.com
IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................14
Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
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2.6
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 15V,
TC = 25°C
TC = 100°C
ID
52
36
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 15V
ID,pulse
130
DC body diode forward current for Rth(j-c,max)
,
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
A
A
V
52
28
1
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
ISD,pulse
130
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
Power dissipation, limited by Tvjmax
TC = 25°C
VGSS
VGSS,on
VGSS,off
-10… 20
15
0
µs
W
tSC
3
Ptot
228
114
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque, M3 screw
Tsold
260
0.6
°C
M
Nm
Maximum of mounting processes: 3
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
0.51
max.
0.66
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
-
-
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
62
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
RDS(on) VGS = 15V, ID = 20A,
mΩ
Tvj = 25°C
-
-
-
45
55
75
59
-
-
Tvj = 100°C
Tvj = 175°C
VGS = 0V, ISD = 20A
Tvj = 25°C
Body diode forward
voltage
VSD
V
V
-
-
-
4.1
4.0
3.9
5.2
-
-
Tvj = 100°C
Tvj = 175°C
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 10mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1200V
Tvj=25°C
Tvj=175°C
µA
-
-
-
-
-
-
2
4
200
-
Gate-source leakage
current
IGSS
VGS = 20V, VDS = 0V
VGS = -10V, VDS = 0V
VDS = 20V, ID = 20A
f = 1MHz, VAC = 25mV
-
120
nA
nA
S
-
-120
Transconductance
gfs
11.1
4
-
-
Internal gate resistance
RG,int
Ω
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
1900
115
13
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
44
52
Total gate charge
VDD = 800V, ID = 20A,
VGS = 0/15V, turn-on pulse
15
13
Gate to source charge
Gate to drain charge
QGS,pl
QGD
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 4
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 20A,
VGS = 0/15V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
9
-
-
-
-
-
-
-
ns
24
17
13
350
70
420
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
µJ
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 20A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
-
-
0.15
8
-
-
µC
A
Diode peak reverse
recovery current
Irrm
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 20A,
VGS = 0/15V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
9
-
-
-
-
-
-
-
ns
µJ
24
20
14
380
75
455
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 20A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
-
-
0.25
10
-
-
µC
A
Diode peak reverse
recovery current
Irrm
4 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
Figure 1
Reverse bias safe operating area
(RBSOA) (Vgs = 0/15V, Tc = 25°C, Tj < 175°C)
Figure 3
Maximum DC drain to source current as aFigure 4
function of case temperature limited by
bond wire (IDS = f(TC))
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 5
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Figure 6
Typical gate-source threshold voltage as
a function of junction temperature
(VGS(th) = f(Tvj), IDS = 10mA, VGS = VDS)
Figure 7
Typical output characteristic, VGS as
parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs)
Figure 8
Typical output characteristic, VGS as
parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 9
Typical on-resistance as a function of
junction temperature
Figure 10 Typical gate charge (VGS =f(QG), IDS = 20A,
VDS = 800V, turn-on pulse)
(RDS(on) = f(Tvj), VGS=15V)
Figure 11 Typical capacitance as a function of
drain-source voltage
Figure 12 Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=20A)
(C = f(VDS), VGS = 0V, f = 1MHz)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 13 Typical body diode forward current as Figure 14 Typical body diode forward current as
function of forward voltage, VGS as
parameter
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
Figure 15 Typical switching energy losses as a
function of junction temperature
(E = f(Tvj), VDD = 800V, VGS = 0V/15V,
Figure 16 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/15V,
RG,ext = 2Ω, ID = 20A, ind. load, test circuit in
Fig. E, diode: body diode)
RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 17 Typical switching energy losses as a
function of gate resistance
Figure 18 Typical switching times as a function of
gate resistor
(E = f(RG,ext), VDD = 800V, VGS = 0V/15V,
ID = 20A, Tvj = 175°C, ind. load, test circuit in
Fig. E, diode: body diode)
(t = f(RG,ext), VDD = 800V, VGS = 0V/15V, ID = 20A,
Tvj = 175°C, ind. load, test circuit in Fig. E,
diode: body diode)
Figure 19 Typical reverse recovery charge as a
function of diode current slope
Figure 20 Typical reverse recovery current as a
function of diode current slope
(Qrr = f(dif/dt), VDD = 800V, ID = 20A, ind. load,
test circuit in Fig.E)
(Irrm = f(dif/dt), VDD = 800V, ID = 20A, ind. load,
test circuit in Fig.E)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
i:
1
2
3
4
ri: [K/W] 2.78E-01 2.01E-01 1.58E-01 2.34E-02
τi: [s]
1.78E-02 2.98E-03 5.23E-04 1.52E-05
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21 Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
Figure 22
Package drawing
Datasheet
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IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Datasheet
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IMW120R045M1
1200V SiC Trench MOSFET
Revision history
Revision history
Major changes since the last revision
Document
version
Date of release
Description of changes
2.1
2.2
2018-03-01
2018-05-30
Initial version
Important footnote update in chapter 1
Change of conditions for switching dynamic characteristics in chapter
3.2 and 3.3
Additional figures for VGS=0V/15V in chapter 4
Add Recommended gate voltage in chapter 1
Add SOA figure in chapter 4
2.3
2.4
2019-04-18
2019-12-10
Figures removed for VGS=-5V/15V in chapter 4
Move the short circuit time from dynamic characteristics table 5 to
maximum ratings table 2.
Update the Figure 21 Zth curve.
2.5
2.6
2020-06-12
2020-12-11
Correction of marking letters in table 1
Correction of circuit symbol on page 1
Datasheet
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Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2020.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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