IPA60R180P7 [INFINEON]
600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G)，确保高效率。;
| 型号： | IPA60R180P7 |
| 厂家： | 
Infineon |
| 描述： | 600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G)，确保高效率。 栅 栅极 |
| 文件： | 总14页 (文件大小：1110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPA60R180P7
MOSFET
PG-TOꢀ220ꢀFP
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
TheꢀCoolMOS™ꢀ7thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor
highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction
(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V
CoolMOS™ꢀP7ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀP6ꢀseries.ꢀIt
combinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellentꢀease
ofꢀuse,ꢀe.g.ꢀveryꢀlowꢀringingꢀtendency,ꢀoutstandingꢀrobustnessꢀofꢀbody
diodeꢀagainstꢀhardꢀcommutationꢀandꢀexcellentꢀESDꢀcapability.
Furthermore,ꢀextremelyꢀlowꢀswitchingꢀandꢀconductionꢀlossesꢀmake
switchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompactꢀandꢀmuch
cooler.
Features
Drain
Pin 2
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀLLC)ꢀdueꢀtoꢀanꢀoutstanding
ꢀꢁcommutationꢀruggedness
•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses
•ꢀExcellentꢀESDꢀrobustnessꢀ>2kVꢀ(HBM)ꢀforꢀallꢀproducts
•ꢀBetterꢀRDS(on)/packageꢀproductsꢀcomparedꢀtoꢀcompetitionꢀenabledꢀbyꢀa
ꢀꢁlowꢀRDS(on)*Aꢀ(belowꢀ1Ohm*mm²)
*1
Gate
Pin 1
*2
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage
ꢀꢁacrossꢀPFCꢀandꢀPWMꢀstages
•ꢀSimplifiedꢀthermalꢀmanagementꢀdueꢀtoꢀlowꢀswitchingꢀandꢀconduction
ꢀꢁlosses
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith
ꢀꢁsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀtoꢀ>2ꢀkVꢀESD
ꢀꢁprotection
•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges
Potentialꢀapplications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀꢀꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom
andꢀUPS.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
180
25
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
53
Eoss @ 400V
Body diode diF/dt
2.9
µJ
900
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA60R180P7
60R180P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
18
11
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
53
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
56
mJ
mJ
A
ID=4.0A; VDD=50V; see table 10
-
0.28
4.0
80
ID=4.0A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
20
V
static;
30
V
AC (f>1 Hz)
26
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
50
-
-
Operating junction temperature
Mounting torque
-
Ncm M2.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
18
A
A
TC=25°C
TC=25°C
IS,pulse
-
53
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
-
-
50
V/ns
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
900
A/µs
VISO
2500
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4.85
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W -
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3.5
4
VDS=VGS,ꢀID=0.28mA
-
-
-
10
1
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.145 0.180
0.34
VGS=10V,ꢀID=5.6A,ꢀTj=25°C
VGS=10V,ꢀID=5.6A,ꢀTj=150°C
RDS(on)
RG
Ω
Ω
-
-
11
-
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1081
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
36
381
14
12
85
8
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,
RG=10.0Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,
RG=10.0Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,
RG=10.0Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,
RG=10.0Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V
Qgd
8
Qg
25
Gate plateau voltage
Vplateau
5.2
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=5.6A,ꢀTj=25°C
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
175
1.3
15
-
-
-
ns
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
30
102
1 µs
10 µs
100 µs
1 ms
10 ms
101
100
25
20
15
10
5
10-1
10-2
DC
10-3
10-4
10-5
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
1 µs
10 µs
100 µs
1 ms
10 ms
0.5
0.2
100
0.1
10-1
10-2
0.05
0.02
DC
0.01
10-1
10-3
10-4
10-5
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
70
50
20 V
20 V
10 V
60
50
40
30
20
10
0
40
30
10 V
8 V
7 V
8 V
7 V
6 V
20
10
0
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.700
3.000
5.5 V
6 V
0.650
2.500
2.000
1.500
1.000
0.500
0.000
0.600
0.550
0.500
0.450
0.400
0.350
0.300
6.5 V
7 V
10 V
20 V
0
10
20
30
40
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=5.6ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
80
12
10
8
25 °C
60
120 V
400 V
150 °C
40
6
4
20
2
0
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=5.6ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
60
50
40
30
20
10
0
101
125 °C
25 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=4.0ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
680
670
660
650
640
630
620
610
600
590
580
570
560
550
540
105
104
Ciss
103
Coss
102
101
Crss
100
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1
2
3
MILLIMETERS
MIN.
DIMENSIONS
MAX.
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
DOCUMENT NO.
Z8B00003319
A
A1
A2
b
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
15.67
8.97
10.00
REVISION
10
b1
b2
b3
b4
c
ISSUE DATE
21.03.2019
SCALE 5:1
0
1
2
3
4
5mm
D
D1
E
e
2.54
EUROPEAN PROJECTION
H
28.70
12.78
2.83
29.75
13.75
3.45
L
L1
øP
Q
3.00
3.30
3.15
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.4,ꢀꢀ2020-01-30
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA60R180P7
RevisionꢀHistory
IPA60R180P7
Revision:ꢀ2020-01-30,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
2017-02-03
2017-03-01
Updated Rthjc; ID rating; SOA curves, Zth curves, y-axis lable diagram 8
Updated Co(er); Co(tr); Eoss; diagram scalings; Nomenclature of product qualification
grade was changed
2017-10-13
2.3
2.4
Nomenclature of product qualification grade was changed
Updated package drawing, symbol ID and product validation
2018-06-07
2020-01-30
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.4,ꢀꢀ2020-01-30
相关型号：
IPA60R180P7S
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