IPA70R900P7S [INFINEON]
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：;
| 型号： | IPA70R900P7S |
| 厂家： | 
Infineon |
| 描述： | 顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择： 手机 电脑 |
| 文件： | 总13页 (文件大小：1138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPA70R900P7S
MOSFET
PG-TOꢀ220ꢀFP
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀExcellentꢀthermalꢀbehavior
*1
Gate
Pin 1
*2
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard
)
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,
Adapters,ꢀLightingꢀApplications,ꢀetc.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Value
700
0.9
Unit
V
Ω
Qg,typ
6.8
nC
A
ID,pulse
12.8
0.9
Eoss @ 400V
V(GS)th,typ
µJ
V
3
ESD class (HBM)
1C
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA70R900P7S
70S900P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
6.0
3.5
TC = 20°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TC = 100°C
ID,pulse
IAS
-
-
-
-
-
-
12.8
3.6
A
A
TC=25°C
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 5µH
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
100
V/ns VDSꢀ=0...400V
-16
-30
-
-
16
30
static;
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
20.5
150
3.3
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt4)
Maximum diode commutation speed4) dif/dt
Tj,ꢀTstg
IS
-40
-
-
-
-
-
TC=25°C
TC = 25°C
IS,pulse
12.8
1
A
dv/dt
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
50
Insulation withstand voltage VISO
2500
V
Vrms, TC=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
6.1
Thermal resistance, junction
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
80
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
2.50
3
3.50
VDS=VGS,ꢀID=0.06mA
-
-
-
10
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C
VDS=700V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
µA
Gate-source leakage current incl. Zener
diode
IGSS
RDS(on)
RG
-
-
1
VGS=20V,ꢀVDS=0V
-
-
0.74
1.53
0.90
-
VGS=10V,ꢀID=1.1A,ꢀTj=25°C
VGS=10V,ꢀID=1.1A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1.6
-
f=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
211
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
5.0
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
13
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
177
12
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
4.7
58
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.9A,
RG=5.3Ω
31
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
2.6
Qg
6.8
Gate plateau voltage
Vplateau
4.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=1.4A,ꢀTj=25°C
Reverse recovery time
160
0.5
ns
µC
A
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.9A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
7
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
30
102
25
20
15
10
5
1 µs
101
100
10 µs
100 µs
1 ms
10 ms
DC
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
0.5
0.2
1 µs
10 µs
100 µs
1 ms
0.1
100
10 ms
DC
0.05
0.02
10-1
10-2
10-3
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
14
10
20 V 10 V 8 V
20 V
10 V
8 V
7 V
9
8
7
6
5
4
3
2
1
0
12
10
8
7 V
6 V
6 V
5.5 V
6
5.5 V
5 V
5 V
4
4.5 V
2
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
6
2.0
5 V
6 V 6.5 V
5.5 V
1.8
1.6
1.4
5
4
3
2
1
0
1.2
98%
7 V
10 V
1.0
typ
0.8
0.6
0.4
0.2
0.0
0
5
10
15
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=1.1ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
14
10
9
8
7
25 °C
12
10
6
120 V
400 V
8
150 °C
5
4
3
2
1
0
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
102
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
101
100
10-1
0.0
0.5
1.0
1.5
2.0
-75 -50 -25
0
25
50
75 100 125 150 175
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
103
Ciss
102
Coss
101
Crss
100
10-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1
2
3
MILLIMETERS
MIN.
DIMENSIONS
MAX.
4.90
2.80
2.86
0.90
1.38
1.50
1.38
1.50
0.63
16.15
9.83
10.65
DOCUMENT NO.
Z8B00181328
A
A1
A2
b
4.50
2.34
2.42
0.65
0.95
1.20
0.65
1.20
0.40
15.67
8.97
10.00
REVISION
03
b1
b2
b3
b4
c
ISSUE DATE
23.07.2018
SCALE 5:1
0
1
2
3
4
5mm
D
D1
E
e
2.54
EUROPEAN PROJECTION
H
28.70
12.78
2.83
29.75
13.75
3.45
L
L1
øP
Q
3.00
3.38
3.15
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2020-01-27
700VꢀCoolMOSªꢀP7ꢀPowerꢀDevice
IPA70R900P7S
RevisionꢀHistory
IPA70R900P7S
Revision:ꢀ2020-01-27,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
2017-09-15
2018-02-12
2020-01-27
Corrected front page text
Updated package drawing, symbol ID and product validation
Trademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2020-01-27
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