IPA90R340C3XKSA2 [INFINEON]
Power Field-Effect Transistor,;型号: | IPA90R340C3XKSA2 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, |
文件: | 总10页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPA90R340C3
CoolMOS™ Power Transistor
Features
Product Summary
V
R
DS @ T J=25°C
900
0.34
94
V
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
DS(on),max @ T J = 25°C
Ω
Q g,typ
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO220 FP
• Worldwide best R DS,on in TO220 Fullpak
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
Package
Marking
IPA90R340C3
PG-TO220 FP
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous drain current2)
I D
T C=25 °C
T C=100 °C
T C=25 °C
15
9.5
A
Pulsed drain current3)
34
I D,pulse
E AS
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
678
1
mJ
3),4)
3),4)
E AR
I AR
3.1
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0...400 V
50
dv /dt
V GS
V/ns
V
±20
±30
35
static
AC (f>1 Hz)
T C=25 °C
P tot
Power dissipation
W
T J, T stg
-55 ... 150
50
Operating and storage temperature
Mounting torque
°C
M2.5 screws
page 1
Ncm
Rev. 1.0
2008-07-29
IPA90R340C3
Maximum ratings, at T J=25 °C, unless otherwise specified
Value
9.2
34
Parameter
Symbol Conditions
Unit
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
I S
A
T C=25 °C
I S,pulse
dv /dt
4
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.6
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
900
2.5
-
-
V
3
3.5
V
DS=900 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
2
-
µA
T j=25 °C
V
DS=900 V, V GS=0 V,
-
-
-
20
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=9.2 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.28
0.34
Ω
T j=25 °C
V
GS=10 V, I D=9.2 A,
-
-
0.76
1.3
-
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
Ω
Rev. 1.0
page 2
2008-07-29
IPA90R340C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
2400
120
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related 6)
C o(er)
-
-
71
-
-
V
GS=0 V, V DS=0 V
to 500 V
Effective output capacitance, time
related 7)
C o(tr)
280
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
70
20
-
-
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=9.2A,
Turn-off delay time
Fall time
400
25
R G=23.1 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
11
41
94
4.6
-
-
nC
Q gd
V
V
DD=400 V, I D=9.2 A,
GS=0 to 10 V
Q g
tbd
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=9.2 A,
V SD
Diode forward voltage
-
0.8
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
510
11
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
41
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T J,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) ISD≤ ID, di/dt≤200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
6) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 50% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 50% V DSS.
Rev. 1.0
page 3
2008-07-29
IPA90R340C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
40
limited by on-state
resistance
1 µs
10 µs
30
20
10
101
100 µs
1 ms
10 ms
100
DC
10-1
0
0
25
50
75
100
125
150
1
10
100
1000
V
DS [V]
T
C [°C]
3 Max. transient thermal impedance
thJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T J=25 °C
parameter: V GS
Z
parameter: D=t p/T
101
50
40
30
20
10
0
10 V
8 V
0.5
6 V
100
0.2
5.5 V
0.1
0.05
5 V
10-1
0.02
0.01
4.5 V
4 V
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
0
5
10
15
20
25
t
p [s]
V DS [V]
Rev. 1.0
page 4
2008-07-29
IPA90R340C3
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T J=150 °C
R
parameter: V GS
25
20
15
10
5
5
20 V
6 V
10 V
5 V
8 V
4
3
2
1
4.5 V
10 V
5 V
4 V
4.8 V
4.5 V
4 V
0
0
0
0
5
10
V
15
DS [V]
20
25
5
10
15
D [A]
20
25
30
I
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
R
DS(on)=f(T J); I D=9.2 A; V GS=10 V
50
40
30
20
10
0
1
25 °C
0.8
0.6
98 %
typ
150 °C
0.4
0.2
0
0
2
4
6
8
10
-60
-20
20
60
100
140
180
T
J [°C]
V GS [V]
Rev. 1.0
page 5
2008-07-29
IPA90R340C3
10 Forward characteristics of reverse diode
I F=f(V SD
9 Typ. gate charge
GS=f(Q gate); I D=9.2 A pulsed
V
)
parameter: V DD
parameter: T J
102
10
25 °C, 98%
8
6
4
2
150 °C, 98%
101
150 °C
400V
720V
25 °C
100
10-1
0
0
0
0.5
1
1.5
2
20
40
Q
60
gate [nC]
80
100
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=3.1A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
700
600
500
400
300
200
100
0
1050
1000
950
900
850
800
25
50
75
100
T j [°C]
125
150
-60
-20
20
60
T j [°C]
100
140
180
Rev. 1.0
page 6
2008-07-29
IPA90R340C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
12
10
8
Ciss
103
102
Coss
6
4
101
2
Crss
100
0
0
0
100
200
300
400
500
600
100
200
300
400
500
600
V
DS [V]
V
DS [V]
Rev. 1.0
page 7
2008-07-29
IPA90R340C3
Definition of diode switching characteristics
Rev. 1.0
page 8
2008-07-29
IPA90R340C3
PG-TO220 FP Outline/Fully isolated package (2500VAC; 1minute)
Dimensions in mm/inches
Rev. 1.0
page 9
2008-07-29
IPA90R340C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.0
page 10
2008-07-29
相关型号:
IPA90R500C3XKSA1
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
IPA90R800C3XKSA1
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
IPAN60R125PFD7S
600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R125PFD7S) 补充了CoolMOS™ 7 系列产品,可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R125PFD7S 具有 125mOhm 的 RDS(on) ,降低了开关损耗。该产品配备了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。
INFINEON
IPAN60R180P7S
600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G),确保高效率。
INFINEON
IPAN60R210PFD7S
600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R210PFD7S) 补充了CoolMOS™ 7 系列产品,可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R210PFD7S 具有 210mOhm 的 RDS(on) ,降低了开关损耗。该产品配备了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。
INFINEON
IPAN70R600P7S
顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能,适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合,700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择:
INFINEON
IPAN70R750P7S
顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能,适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合,700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择:
INFINEON
©2020 ICPDF网 联系我们和版权申明