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IPA90R500C3 [INFINEON]

CoolMOS Power Transistor; 的CoolMOS功率晶体管
IPA90R500C3
型号： IPA90R500C3
厂家： Infineon    Infineon
描述：

CoolMOS Power Transistor
的CoolMOS功率晶体管

晶体 晶体管
文件： 总10页 (文件大小：366K)
中文：  中文翻译
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IPA90R500C3  
CoolMOS™ Power Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
0.5  
68  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @ T J= 25°C  
Ω
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220 FP  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPA90R500C3  
PG-TO220 FP  
9R500C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current2)  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
11  
6.8  
A
Pulsed drain current3)  
24  
I D,pulse  
E AS  
I D=2.2 A, V DD=50 V  
I D=2.2 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
388  
0.74  
2.2  
mJ  
3),4)  
3),4)  
E AR  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
34  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
50  
Operating and storage temperature  
Mounting torque  
°C  
M2.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  
IPA90R500C3  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
6.6  
23  
Parameter  
Symbol Conditions  
Unit  
Continuous diode forward current2)  
Diode pulse current3)  
Reverse diode dv /dt 5)  
I S  
A
T C=25 °C  
I S,pulse  
dv /dt  
4
V/ns  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
3.7  
62  
K/W  
Thermal resistance, junction -  
ambient  
R thJA  
leaded  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6 mm (0.063 in.)  
from case for 10 s  
T sold  
-
-
260 °C  
Electrical characteristics, at T J=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=250 µA  
DS=V GS, I D=0.74 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
900  
2.5  
-
-
V
3
3.5  
V
DS=900 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
1
-
µA  
T j=25 °C  
V
DS=900 V, V GS=0 V,  
-
-
-
10  
-
T j=150 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=6.6 A,  
Gate-source leakage current  
100 nA  
R DS(on)  
Drain-source on-state resistance  
0.39  
0.5  
Ω
T j=25 °C  
V
GS=10 V, I D=6.6 A,  
-
-
1.1  
1.3  
-
-
T j=150 °C  
R G  
Gate resistance  
f =1 MHz, open drain  
Ω
Rev. 1.0  
page 2  
2008-07-29  
IPA90R500C3  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C iss  
Input capacitance  
Output capacitance  
-
-
1700  
83  
-
-
pF  
V
GS=0 V, V DS=100 V,  
f =1 MHz  
C oss  
Effective output capacitance, energy  
related6)  
C o(er)  
-
-
52  
-
-
V
GS=0 V, V DS=0 V  
to 500 V  
Effective output capacitance, time  
related7)  
C o(tr)  
200  
t d(on)  
t r  
t d(off)  
t f  
Turn-on delay time  
Rise time  
-
-
-
-
70  
20  
-
-
-
-
ns  
V
V
DD=400 V,  
GS=10 V, I D=6.6 A,  
Turn-off delay time  
Fall time  
400  
25  
R G=30.9 Ω  
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
8
-
-
nC  
Q gd  
29  
68  
4.6  
V
V
DD=400 V, I D=6.6 A,  
GS=0 to 10 V  
Q g  
tbd  
-
V plateau  
Gate plateau voltage  
V
V
Reverse Diode  
V
GS=0 V, I F=6.6 A,  
V SD  
Diode forward voltage  
-
0.8  
1.2  
T j=25 °C  
t rr  
Reverse recovery time  
-
-
-
480  
8.5  
31  
-
-
-
ns  
µC  
A
V R=400 V, I F=I S,  
di F/dt =100 A/µs  
Q rr  
I rrm  
Reverse recovery charge  
Peak reverse recovery current  
1) J-STD20 and JESD22  
2) Limited only by maximum temperature  
3) Pulse width t p limited by T J,max  
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.  
5) ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch  
6) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 50% V DSS.  
7) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 50% V DSS.  
Rev. 1.0  
page 3  
2008-07-29  
IPA90R500C3  
1 Power dissipation  
2 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
P
tot=f(T C)  
102  
40  
limited by on-state  
resistance  
1 µs  
30  
20  
10  
10 µs  
101  
100 µs  
1 ms  
10 ms  
100  
DC  
10-1  
0
0
25  
50  
75  
100  
125  
150  
1
10  
100  
1000  
V
DS [V]  
T
C [°C]  
3 Max. transient thermal impedance  
thJC=f(tP)  
4 Typ. output characteristics  
I D=f(V DS); T J=25 °C  
parameter: V GS  
Z
parameter: D=t p/T  
35  
30  
25  
20  
15  
10  
5
20 V  
6 V  
10 V  
8 V  
0.5  
100  
0.2  
5.5 V  
0.1  
0.05  
5 V  
10-1  
0.02  
0.01  
4.5 V  
4 V  
single pulse  
10-2  
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
0
5
10  
15  
20  
25  
t
p [s]  
V DS [V]  
Rev. 1.0  
page 4  
2008-07-29  
IPA90R500C3  
5 Typ. output characteristics  
I D=f(V DS); T J=150 °C  
parameter: V GS  
6 Typ. drain-source on-state resistance  
DS(on)=f(I D); T J=150 °C  
R
parameter: V GS  
15  
10  
5
10  
20 V  
10 V  
6 V  
8 V  
5 V  
8
6
4
2
4.5 V  
10 V  
4 V  
5 V  
4.8 V  
4.5 V  
4 V  
0
0
0
0
5
10  
15  
DS [V]  
20  
25  
5
10  
15  
20  
25  
V
ID [A]  
7 Drain-source on-state resistance  
8 Typ. transfer characteristics  
I D=f(V GS); V DS=20V  
parameter: T J  
R
DS(on)=f(T J); I D=6.6 A; V GS=10 V  
35  
30  
25  
20  
15  
10  
5
1.5  
25 °C  
1.2  
0.9  
150 °C  
98 %  
0.6  
typ  
0.3  
0
0
0
2
4
6
8
10  
-60  
-20  
20  
60  
100  
140  
180  
T
J [°C]  
V GS [V]  
Rev. 1.0  
page 5  
2008-07-29  
IPA90R500C3  
10 Forward characteristics of reverse diode  
I F=f(V SD  
9 Typ. gate charge  
GS=f(Q gate); I D=6.6 A pulsed  
V
)
parameter: V DD  
parameter: T J  
102  
10  
25 °C, 98%  
8
6
4
2
150 °C, 98%  
101  
400 V  
720 V  
25 °C  
150 °C  
100  
10-1  
0
0
0
20  
40  
gate [nC]  
60  
80  
0.5  
1
1.5  
2
Q
V
SD [V]  
11 Avalanche energy  
12 Drain-source breakdown voltage  
E
AS=f(T J); I D=2.2 A; V DD=50 V  
V
BR(DSS)=f(T J); I D=0.25 mA  
400  
1050  
1000  
950  
900  
850  
800  
300  
200  
100  
0
25  
50  
75  
100  
J [°C]  
125  
150  
-60  
-20  
20  
60  
J [°C]  
100  
140  
180  
T
T
Rev. 1.0  
page 6  
2008-07-29  
IPA90R500C3  
13 Typ. capacitances  
14 Typ. Coss stored energy  
C =f(V DS); V GS=0 V; f =1 MHz  
E oss= f(V DS)  
10000  
8
Ciss  
1000  
6
4
2
100  
Coss  
10  
Crss  
1
0
0
0
100  
200  
300  
400  
500  
600  
100  
200  
300  
400  
500  
600  
V
DS [V]  
V
DS [V]  
Rev. 1.0  
page 7  
2008-07-29  
IPA90R500C3  
Definition of diode switching characteristics  
Rev. 1.0  
page 8  
2008-07-29  
IPA90R500C3  
PG-TO220 FP Outlines/Fully isolated package (2500VAC; 1 minute)  
Dimensions in mm/inches  
Rev. 1.0  
page 9  
2008-07-29  
IPA90R500C3  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2008 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics. With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please  
contact the nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information  
on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user  
or other persons may be endangered.  
Rev. 1.0  
page 10  
2008-07-29  

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