IPB034N06L3GXT [INFINEON]

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3;


型号：	IPB034N06L3GXT
厂家：	Infineon
描述：	Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 晶体晶体管功率场效应晶体管开关脉冲
文件：	总11页 (文件大小：999K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

"%&$!"#^™3 Power-Transistor

Product Summary

V _9I

+&,

Features

R _{ꢁ -ꢅ@? ꢆꢈ>2 I ꢅ-' ꢁ ꢆ}

I ₉

R #562 = 7@C 9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4ꢀ C64ꢀ

R ) AE:>:K65 E649? @=@8J 7@C ꢁ ꢂ ꢃꢁ ꢂ 4@? G6CE6CD

R ꢄ I46==6? E 82 E6 492 C86 I R _9I"\[#AC@5F4E ꢅ ) ' ꢆ

R /6CJ =@H @? ꢇC6D:DE2 ? 46 , _9I"\[#

AC6G:@FD 6? 8:? 66C:? 8

D2 >A=6 4@56Dꢗ

?FF(,eD(.B

?F?(,eD(.B

R ( ꢇ492 ? ? 6=ꢈ =@8:4 =6G6=

R ꢉ ꢊ ꢊ ꢋ 2 G2 =2 ? 496 E6DE65

?F7(,eD(.B

R *3 ꢇ7C66 A=2 E:? 8ꢌ , @" - 4@>A=:2 ? E

R + F2 =:7:65 2 44@C5:? 8 E@ $ ꢄ ꢁ ꢄ ꢂ ^)#7@C E2 C86E 2 AA=:42 E:@? D

R " 2 =@86? ꢇ7C66 2 44@C5:? 8 E@ #ꢄ ꢂ ꢍ ꢉ ꢎ ꢏ ꢐ ꢇꢎ ꢇꢎ ꢉ

Type

#*ꢘ ꢊ ꢖ ꢏ ( ꢊ ꢍ & ꢖ !

#*#ꢊ ꢖ ꢔ ( ꢊ ꢍ & ꢖ !

#**ꢊ ꢖ ꢔ ( ꢊ ꢍ & ꢖ !

Package

Marking

F=%JE%*.+%+

(+,D(.B

F=%JE%*.*%+

(+/D(.B

F=%JE%**(%+

(+/D(.B

Maximum ratings, 2 E T _Wꢑ ꢎ ꢒ Uꢂ ꢈ F? =6DD @E96CH:D6 DA64:7:65

Value

Parameter

Symbol Conditions

Unit

T ₈ꢑ ꢎ ꢒ Uꢂ ^*#

I ₉

ꢂ @? E:? F@FD 5C2 :? 4FCC6? E

T ₈ꢑ ꢉ ꢊ ꢊ Uꢂ

*F=D65 5C2 :? 4FCC6? E^+#

I _9$]bY`R

E _6I

T ₈ꢑ ꢎ ꢒ Uꢂ

+.(

ꢓ G2 =2 ? 496 6? 6C8Jꢈ D:? 8=6 AF=D6^,#

!2 E6 D@FC46 G@=E2 86

I ₉ꢑ ꢐ ꢊ ꢓ ꢈ R _=Iꢑ ꢎ ꢒ "

).-

V _=I

r*(

P _a\a

T ₈ꢑ ꢎ ꢒ Uꢂ

*@H6C 5:DD:A2 E:@?

)./

Uꢂ

T _Wꢈ T _`aT

) A6C2 E:? 8 2 ? 5 DE@C2 86 E6>A6C2 EFC6

#ꢄ ꢂ 4=:>2 E:4 42 E68@CJꢌ ꢁ #( #ꢄ ꢂ ꢍ ꢕ ꢇꢉ

ꢇꢒ ꢒ ꢀꢀꢀ ꢉ ꢔ ꢒ

ꢒ ꢒ ꢃꢉ ꢔ ꢒ ꢃꢒ ꢍ

^)#$ ꢇ-.ꢁ ꢎ ꢊ 2 ? 5 $ ꢄ -ꢁ ꢎ ꢎ

^*#ꢂ FCC6? E :D =:>:E65 3 J 3 @? 5H:C6ꢌ H:E9 2 ? R _aU@8ꢑ ꢊ ꢀꢐ % ꢃ0 E96 49:A :D 2 3 =6 E@ 42 CCJ ꢉ ꢍ ꢏ ꢓ ꢀ

^+#-66 7:8FC6 ꢖ 7@C >@C6 56E2 :=65 :? 7@C>2 E:@?

^,#-66 7:8FC6 ꢉ ꢖ 7@C >@C6 56E2 :=65 :? 7@C>2 E:@?

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢉ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _aU@8

.96C>2 = C6D:DE2 ? 46ꢈ ;F? 4E:@? ꢇ 42 D6

.96C>2 = C6D:DE2 ? 46ꢈ

ꢇ

(&1

ꢍ ꢎ

A'L

R _aU@6

>:? :>2 = 7@@EAC:? E

ꢍ 4>W 4@@=:? 8 2 C62 ^-#

;F? 4E:@? ꢇ 2 >3 :6? E

Electrical characteristics, 2 E T _Wꢑ ꢎ ꢒ Uꢂ ꢈ F? =6DD @E96CH:D6 DA64:7:65

Static characteristics

V _"7H#9II

V _=I"aU#

_=Iꢑ ꢊ /ꢈ I ₉ꢑ ꢉ >ꢓ

_9I4V _=Iꢈ I ₉ꢑ ꢐ ꢖ Xꢓ

ꢁ C2 :? ꢇD@FC46 3 C62 <5@H? G@=E2 86

!2 E6 E9C6D9@=5 G@=E2 86

)&*

)&/

*&*

_9Iꢑ ꢍ ꢊ /ꢈ V _=Iꢑ ꢊ /ꢈ

I _9II

16C@ 82 E6 G@=E2 86 5C2 :? 4FCC6? E

(&)

)(

)

T _Wꢑ ꢎ ꢒ Uꢂ

_9Iꢑ ꢍ ꢊ /ꢈ V _=Iꢑ ꢊ /ꢈ

)((

T _Wꢑ ꢉ ꢎ ꢒ Uꢂ

I _=II

_=Iꢑ ꢎ ꢊ /ꢈ V _9Iꢑ ꢊ /

_=Iꢑ ꢉ ꢊ /ꢈ I ₉ꢑ ꢐ ꢊ ꢓ

!2 E6ꢇD@FC46 =62 <2 86 4FCC6? E

)

)(( [6

R _9I"\[#

ꢁ C2 :? ꢇD@FC46 @? ꢇDE2 E6 C6D:DE2 ? 46

+&(

+&/

+&,

-&/

-&,

"IC9#

_=Iꢑ ꢉ ꢊ /ꢈ I ₉ꢑ ꢐ ꢊ ꢓ ꢈ

*&/

+&1

+&.

)&+

)-+

R _9I"\[#

_=Iꢑ ꢏ ꢀꢒ /ꢈ I ₉ꢑ ꢏ ꢒ ꢓ

_=Iꢑ ꢏ ꢀꢒ /ꢈ I ₉ꢑ ꢏ ꢒ ꢓ ꢈ

ꢁ C2 :? ꢇD@FC46 @? ꢇDE2 E6 C6D:DE2 ? 46

"IC9#

R ₌

g _S`

!2 E6 C6D:DE2 ? 46

hV _9Ih5*hI ₉hR _9I"\[#ZNeꢈ

I ₉ꢑ ꢐ ꢊ ꢓ

J_N[`P\[QbPaN[PR

^-#ꢁ 6G:46 @? ꢏ ꢊ >> I ꢏ ꢊ >> I ꢉ ꢀꢒ >> 6A@IJ *ꢂ ꢘ , ꢏ H:E9 ꢍ 4> ꢅ@? 6 =2 J6Cꢈ ꢔ ꢊ X> E9:4<ꢆ 4@AA6C 2 C62 7@C 5C2 :?

4@? ? 64E:@? ꢀ *ꢂ ꢘ :D G6CE:42 = :? DE:== 2 :Cꢀ

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢎ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

#? AFE 42 A2 4:E2 ? 46

) FEAFE 42 A2 4:E2 ? 46

, 6G6CD6 EC2 ? D76C 42 A2 4:E2 ? 46

.FC? ꢇ@? 56=2 J E:>6

, :D6 E:>6

C _V``

)((((

)/((

)+((( ]<

_=Iꢑ ꢊ /ꢈ V _9Iꢑ ꢖ ꢊ /ꢈ

C _\``

C _{_``}

t _Q"\[#

t _{_}

*+((

f ꢑ ꢉ ' " K

₉₉ꢑ ꢖ ꢊ /ꢈ V _=Iꢑ ꢉ ꢊ /ꢈ

I ₉ꢑ ꢐ ꢊ ꢓ ꢈ R ₌ꢑ ꢉ ꢀꢍ "

t _Q"\SS#

t _S

.FC? ꢇ@77 56=2 J E:>6

2 == E:>6

!2 E6 ꢂ 92 CT6 ꢂ 92 C2 4E6C:DE:4D^.#

!2 E6 E@ D@FC46 492 C86

!2 E6 E@ 5C2 :? 492 C86

-H:E49:? 8 492 C86

Q _T`

))

-1

+&,

Q _TQ

₉₉ꢑ ꢖ ꢊ /ꢈ I ₉ꢑ ꢐ ꢊ ꢓ ꢈ

_=Iꢑ ꢊ E@ ꢏ ꢀꢒ /

Q _`d

Q _T

!2 E6 492 C86 E@E2 =

V _]YNaRNb

Q _\``

!2 E6 A=2 E62 F G@=E2 86

) FEAFE 492 C86

₉₉ꢑ ꢖ ꢊ /ꢈ V _=Iꢑ ꢊ /

))( [8

Reverse Diode

I _I

ꢁ :@56 4@? E:? @FD 7@CH2 C5 4FCC6? E

ꢁ :@56 AF=D6 4FCC6? E

T ₈ꢑ ꢎ ꢒ Uꢂ

I _I$]bY`R

+.(

_=Iꢑ ꢊ /ꢈ I _<ꢑ ꢐ ꢊ ꢓ ꢈ

V _I9

ꢁ :@56 7@CH2 C5 G@=E2 86

(&1-

)&*

T _Wꢑ ꢎ ꢒ Uꢂ

t _{__}

, 6G6CD6 C64@G6CJ E:>6

V _Hꢑ ꢖ ꢊ /ꢈ I _<4I _Iꢈ

Qi _<'Qt ꢑ ꢉ ꢊ ꢊ ꢓ ꢃXD

Q _{__}

, 6G6CD6 C64@G6CJ 492 C86

^.#-66 7:8FC6 ꢉ ꢍ 7@C 82 E6 492 C86 A2 C2 >6E6C 567:? :E:@?

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢖ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

1 Power dissipation

2 Drain current

_a\a4S"T ₈#

I ₉4S"T ₈ꢆꢌ V _=I"ꢉ ꢊ /

200

100

160

120

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I ₉4S"V _9Iꢆꢌ T ₈ꢑ ꢎ ꢒ Uꢂ ꢌ D 4(

A2 C2 >6E6Cꢗ t _]

4 Max. transient thermal impedance

_aU@84S"t _]#

A2 C2 >6E6Cꢗ D 4t _]'T

10³

10⁰

=:>:E65 3 J @? ꢇDE2 E6

_R`V`aN[PR

ꢉ XD

ꢉ ꢊ XD

(&-

10²

10¹

10⁰

10^-1

ꢉ ꢊ ꢊ XD

(&*

(&)

ꢉ >D

10^-1

ꢉ ꢊ >D

(&(-

(&(*

(&()

D:? 8=6 AF=D6

10^-2

10^-1

10⁰

10¹

10²

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V _DS[V]

t _p[s]

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢏ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

5 Typ. output characteristics

I ₉4S"V _9Iꢆꢌ T _Wꢑ ꢎ ꢒ Uꢂ

6 Typ. drain-source on resistance

_9I"\[#4S"I ₉ꢆꢌ T _Wꢑ ꢎ ꢒ Uꢂ

A2 C2 >6E6Cꢗ V _=I

320

ꢍ /

ꢏ ꢀꢒ /

ꢒ /

ꢉ ꢊ /

ꢏ /

ꢖ /

ꢖ ꢀꢒ /

240

160

ꢏ /

ꢖ ꢀꢒ /

ꢏ ꢀꢒ /

ꢒ /

ꢍ /

)(K

ꢖ /

ꢉ ꢊ /

100

150

200

250

V _DS[V]

I _D[A]

7 Typ. transfer characteristics

I ₉4S"V _=Iꢆꢌ LV _9Ih5*hI ₉hR _9I"\[#ZNe

A2 C2 >6E6Cꢗ T _W

8 Typ. forward transconductance

g _S`4S"I ₉ꢆꢌ T _Wꢑ ꢎ ꢒ Uꢂ

320

240

160

200

160

120

ꢉ ꢔ ꢒ Uꢂ

ꢎ ꢒ Uꢂ

100

150

V _GS[V]

I _D[A]

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢒ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_=I"aU#4S"T _Wꢆꢌ V _=I4V _9I

_9I"\[#4S"T _Wꢆꢌ I ₉ꢑ ꢐ ꢊ ꢓ ꢌ V _=Iꢑ ꢉ ꢊ /

A2 C2 >6E6Cꢗ I ₉

2.5

1.5

ꢐ ꢖ ꢊ Xꢓ

ꢐ ꢖ Xꢓ

ZNe

af]

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _<4S"V _I9

C 4S"V _9Iꢆꢌ V _=Iꢑ ꢊ /ꢌ f ꢑ ꢉ ' " K

A2 C2 >6E6Cꢗ T _W

10⁵

10³

8V``

10⁴

ꢎ ꢒ Uꢂ

ꢉ ꢔ ꢒ Uꢂ ꢈ ꢐ ꢕ ꢋ

10²

ꢉ ꢔ ꢒ Uꢂ

8\``

10³

ꢎ ꢒ Uꢂ ꢈ ꢐ ꢕ ꢋ

10¹

8_``

10²

10¹

10⁰

0.5

1.5

V _DS[V]

V _SD[V]

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢍ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

13 Avalanche characteristics

_6I4S"t _6Kꢆꢌ R _=Iꢑ ꢎ ꢒ "

14 Typ. gate charge

_=I4S"Q _TNaRꢆꢌ I ₉ꢑ ꢐ ꢊ ꢓ AF=D65

A2 C2 >6E6Cꢗ T _{W"`aN_a#}

A2 C2 >6E6Cꢗ V ₉₉

1000

ꢖ ꢊ /

ꢉ ꢎ /

ꢏ ꢕ /

100

ꢎ ꢒ Uꢂ

ꢉ ꢊ ꢊ Uꢂ

ꢉ ꢒ ꢊ Uꢂ

100

1000

100

150

t _AV[µs]

Q _gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_7H"9II#4S"T _Wꢆꢌ I ₉ꢑ ꢉ >ꢓ

V _=I

Q _g

V _{T `"aU#}

Q _T"aU#

Q _`d

Q _TQ

Q _gate

Q _T`

-60

-20

100

140

180

T _j[°C]

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢔ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

PG-TO-220-3

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢕ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

PG-TO-262-3 (I²-Pak)

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢐ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

PG-TO-263 (D²-Pak)

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢉ ꢊ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3 G IPI037N06L3 G

IPP037N06L3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

, 6Gꢀ ꢎ ꢀꢔ

A2 86 ꢉ ꢉ

ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢍ

IPB034N06L3GXT [INFINEON]

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