IPB043N10NF2S [INFINEON]
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.;
| 型号： | IPB043N10NF2S |
| 厂家： | 
Infineon |
| 描述： | Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency. |
| 文件： | 总11页 (文件大小：1163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB043N10NF2S
MOSFET
StrongIRFETTMꢀ2ꢀPower-Transistor
D²PAK
Features
tab
•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications
•ꢀN-Channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
1
3
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
4.35
135
74
Unit
Gate
Pin 1
VDS
V
RDS(on),max
ID
mΩ
A
Source
Pin 3
Qoss
nC
nC
QG
57
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB043N10NF2S
PG-TO263-3
043N10NS
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
135
97
86
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=6ꢀV,ꢀTC=100ꢀ°C
21
VGS=10V,TA=25°C,RthJA=40°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
540
105
20
A
TA=25ꢀ°C
-
mJ
V
ID=82ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
167
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.9
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=93ꢀµA
3.0
3.8
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
3.8
4.6
4.35
5.6
VGS=10ꢀV,ꢀID=80ꢀA
VGS=6ꢀV,ꢀID=40ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
1.3
-
-
-
Ω
-
70
S
|VDS|≥2|ID|RDS(on)max,ꢀID=80ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
4000
630
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
28
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
18
71
27
8
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,
RG,ext=1.6ꢀΩ
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
12
-
12
-
Qsw
19
-
Gate charge total1)
Qg
57
85
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
4.8
49
-
nC
nC
74
-
VDS=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
123
540
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.92
40
V
VGS=0ꢀV,ꢀIF=80ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=80ꢀA,ꢀdiF/dt=500ꢀA/µs
VR=50ꢀV,ꢀIF=80ꢀA,ꢀdiF/dt=500ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
287
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
175
140
150
125
100
75
120
100
80
60
40
20
0
50
25
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
0.02
1 µs
10 µs
0.05
102
0.1
0.2
0.5
100
100 µs
1 ms
101
DC
10-1
10-2
10-3
10 ms
100
10-1
10-2
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
600
12
8 V
10 V
7 V
500
400
300
200
100
0
10
4.5 V
8
6
4
2
0
5 V
6 V
7 V
6 V
8 V
10 V
5 V
4.5 V
0
1
2
3
4
5
0
40
80
120
160
200
240
280
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
600
12
500
400
300
200
100
0
10
8
175 °C
25 °C
6
25 °C
175 °C
4
2
0
0
1
2
3
4
5
6
7
0
3
6
9
12
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=80ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
4.0
3.5
3.0
2.5
2.0
1.6
1.2
0.8
0.4
0.0
930 µA
93 µA
2.0
1.5
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=80ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
Ciss
103
102
101
102
101
100
Coss
Crss
80
0
20
40
60
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
20 V
50 V
80 V
8
6
4
2
0
102
25 °C
101
100 °C
150 °C
100
10-1
10-1
100
101
102
103
0
10
20
30
40
50
60
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=80ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO263-3-U02
MILLIMETERS
DIMENSIONS
MIN.
4.06
0.00
0.51
1.07
0.30
1.14
8.38
6.60
9.65
6.22
MAX.
4.83
0.25
1.00
1.78
0.73
1.65
9.65
7.50
10.67
8.70
A
A1
b
b1
c
c1
D
D1
E
E1
e
2.54
3
N
H
14.60
1.52
15.88
2.60
1.68
1.78
8.00°
L
L1
L2
THETA
1.05
1.35
-9.00°
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-09-23
StrongIRFETTMꢀ2ꢀPower-Transistor
IPB043N10NF2S
RevisionꢀHistory
IPB043N10NF2S
Revision:ꢀ2022-09-23,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-09-23
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-09-23
相关型号：
IPB044N15N5
英飞凌推出的 OptiMOS™5 150 V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。新产品突破性地降低了 R DS(on)（与 SuperSO8 中的下一个理想替代品相比高达 25％）和 Q rr，而不影响 FOM gd 和 FOM OSS，从而在优化系统效率的同时有效减少设计工作量。此外，超低反向恢复电荷（在 SuperSO8 中，Q rr = 26 nC）提高了换流坚固性。
INFINEON
IPB048N06LGATMA1
Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB048N15N5
英飞凌推出的 OptiMOS™5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。产品突破性地降低了 R DS(on)（与 SuperSO8 中的下一个理想替代品相比高达 25％）和 Q rr，而不影响 FOM gd 和 FOM OSS，从而在优化系统效率的同时有效减少设计工作量。此外，超低反向恢复电荷（在 SuperSO8 中，Q rr = 26 nC）提高了换流坚固性。
INFINEON
IPB048N15N5ATMA1
Power Field-Effect Transistor, 120A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB048N15N5LFATMA1
Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB049N06L3GATMA1
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB049N08N5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
INFINEON
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