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IPB107N20N3 G [INFINEON]

英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;
IPB107N20N3 G
型号： IPB107N20N3 G
厂家： Infineon    Infineon
描述：

英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。

电机 驱动 转换器
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IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
VDS  
200  
10.7  
88  
V
• N-channel, normal level  
RDS(on),max (TO263)  
ID  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Halogen-free according to IEC61249-2-21  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB107N20N3 G  
IPP110N20N3 G  
IPI110N20N3 G  
Package  
Marking  
PG-TO263-3  
107N20N  
PG-TO220-3  
110N20N  
PG-TO262-3  
110N20N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
88  
63  
A
Pulsed drain current2)  
I D,pulse  
E AS  
352  
I D=80 A, R GS=25 W  
Avalanche energy, single pulse  
Reverse diode dv /dt  
560  
mJ  
kV/µs  
V
dv /dt  
V GS  
10  
Gate source voltage  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
°C  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.3  
page 1  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
-
-
0.5  
62  
40  
K/W  
R thJA  
minimal footprint  
Thermal resistance, junction -  
ambient  
6 cm2 cooling area3)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS V GS=0 V, I D=1 mA  
V GS(th) V DS=V GS, I D=270 µA  
Drain-source breakdown voltage  
Gate threshold voltage  
200  
2
-
-
V
3
4
V DS=160 V, V GS=0 V,  
T j=25 °C  
I DSS  
Zero gate voltage drain current  
-
-
0.1  
10  
1
µA  
V DS=160 V, V GS=0 V,  
T j=125 °C  
100  
I GSS  
V GS=20 V, V DS=0 V  
Gate-source leakage current  
-
-
1
100 nA  
V GS=10 V, I D=88 A,  
(TO220, TO262)  
R DS(on)  
Drain-source on-state resistance  
9.9  
11  
mW  
V GS=10 V, I D=88 A,  
(TO263)  
-
-
9.6  
2.4  
10.7  
-
R G  
g fs  
Gate resistance  
W
|V DS|>2|I D|R DS(on)max  
I D=88 A  
,
Transconductance  
71  
141  
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 2.3  
page 2  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
-
-
-
-
-
-
-
5340  
401  
5
7100 pF  
V GS=0 V, V DS=100 V,  
f =1 MHz  
C oss  
C rss  
t d(on)  
t r  
533  
-
18  
-
-
-
-
ns  
V DD=100 V,  
V GS=10 V, I D=44 A,  
R G=1.6 W  
26  
t d(off)  
t f  
Turn-off delay time  
Fall time  
41  
11  
Gate Charge Characteristics4)  
Gate to source charge  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
23  
8
-
-
nC  
Q gd  
V DD=100 V, I D=44 A,  
V GS=0 to 10 V  
Q sw  
Q g  
15  
65  
4.4  
162  
-
Gate charge total  
87  
-
V plateau  
Q oss  
Gate plateau voltage  
Output charge  
V
V DD=100 V, V GS=0 V  
216 nC  
Reverse Diode  
I S  
Diode continous forward current  
Diode pulse current  
-
-
-
-
88  
A
T C=25 °C  
I S,pulse  
352  
V GS=0 V, I F=88 A,  
T j=25 °C  
V SD  
Diode forward voltage  
-
1
1.2  
-
V
t rr  
Reverse recovery time  
-
-
142  
640  
ns  
V R=100 V, I F=44 A,  
di F/dt =100 A/µs  
Q rr  
Reverse recovery charge  
nC  
4) See figure 16 for gate charge parameter definition  
Rev. 2.3  
page 3  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
1 Power dissipation  
2 Drain current  
P tot=f(T C)  
I D=f(T C); V GS≥10 V  
320  
280  
240  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
40  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TC [°C]  
TC [°C]  
3 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
Z thJC=f(t p)  
parameter: D =t p/T  
103  
102  
101  
100  
10-1  
100  
1 µs  
10 µs  
100 µs  
0.5  
1 ms  
0.2  
10-1  
10 ms  
0.1  
DC  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
10-1  
100  
101  
102  
103  
tp [s]  
VDS [V]  
Rev. 2.3  
page 4  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
6 Typ. drain-source on resistance  
R DS(on)=f(I D); T j=25 °C  
parameter: V GS  
parameter: V GS  
200  
20  
10 V  
175  
4.5 V  
7 V  
150  
15  
10  
5
5 V  
125  
100  
75  
50  
25  
0
5 V  
7 V  
10 V  
4.5 V  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
120  
140  
VDS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
60  
60  
40  
40  
175 °C  
20  
20  
25 °C  
0
0
0
2
4
6
8
0
25  
50  
75  
100  
125  
150  
VGS [V]  
ID [A]  
Rev. 2.3  
page 5  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
R DS(on)=f(T j); I D=88 A; V GS=10 V  
V GS(th)=f(T j); V GS=V DS  
parameter: I D  
35  
30  
25  
20  
4
3.5  
3
2700 µA  
270 µA  
2.5  
2
98%  
15  
1.5  
1
typ  
10  
5
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
Tj [°C]  
100  
140  
180  
Tj [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
104  
103  
Ciss  
Coss  
103  
102  
25°C, 98%  
25 °C  
175 °C  
102  
Crss  
101  
175°C, 98%  
101  
100  
0
0.5  
1
1.5  
2
0
40  
80  
120  
160  
VSD [V]  
VDS [V]  
Rev. 2.3  
page 6  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
13 Avalanche characteristics  
14 Typ. gate charge  
V GS=f(Q gate); I D=44 A pulsed  
parameter: V DD  
I AS=f(t AV); R GS=25 W  
parameter: T j(start)  
100  
10  
25 °C  
8
160 V  
100 °C  
100 V  
125 °C  
6
40 V  
10  
4
2
0
1
0
20  
40  
Qgate [nC]  
60  
80  
1
10  
100  
1000  
tAV [µs]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V BR(DSS)=f(T j); I D=1 mA  
230  
220  
210  
200  
190  
180  
V GS  
Qg  
V gs(th)  
Qg(th)  
Qsw  
Qgd  
Qgate  
Qgs  
-60  
-20  
20  
60  
100  
140  
180  
Tj [°C]  
Rev. 2.3  
page 7  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
PG-TO220-3: Outline  
Rev. 2.3  
page 8  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
PG-TO263-3: Outline  
Rev. 2.3  
page 9  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
PG-TO262-3: Outline  
Rev. 2.3  
page 10  
2011-07-14  
IPB107N20N3 G IPP110N20N3 G  
IPI110N20N3 G  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics. With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please  
contact the nearest Infineon Technologies Office (www.infineon.com).  
on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user  
or other persons may be endangered.  
Rev. 2.3  
page 11  
2011-07-14  

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