IPB12CN10NG [INFINEON]

OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管

IPB12CN10NG


型号：	IPB12CN10NG
厂家：	INFINEON TECHNOLOGIES AG
描述：	OptiMOS㈢2 Power-Transistor OptiMOS®2功率三极管
文件：	总12页 (文件大小：627K)
下载：	下载PDF数据表文档文件

IPB12CN10NG_10

OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS

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6 INFINEON

IPB12CNE8N

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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18 INFINEON

IPB12CNE8N_07

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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19 INFINEON

IPB12CNE8NG

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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15 INFINEON

IPB12CNE8NG

OptiMOS㈢2 Power-Transistor

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18 INFINEON

IPB12CNE8NGATMA1

Power Field-Effect Transistor, 67A I(D), 85V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB136N08N3G

Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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1 INFINEON

IPB139N08N3G

OptiMOS3 Power-Transistor

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33 INFINEON

IPB13N03LB

OptiMOS㈢2 Power-Transistor

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23 INFINEON

IPB144N12N3G

OptiMOS?3 Power-Transistor

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38 INFINEON

IPB144N12N3GATMA1

Power Field-Effect Transistor, 56A I(D), 120V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB147N03LG

OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS

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21 INFINEON

IPB147N03LGATMA1

Power Field-Effect Transistor, 20A I(D), 30V, 0.0217ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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0 INFINEON

IPB14N03LA

OptiMOS 2 Power-Transistor

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55 INFINEON

IPB14N03LAG

OptiMOS㈢2 Power-Transistor

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20 INFINEON

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