IPB12CN10NGATMA1 [INFINEON]
Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3;
| 型号： | IPB12CN10NGATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 |
| 文件： | 总12页 (文件大小：858K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features
Product Summary
VDS
100
12.4
67
V
• N-channel, normal level
RDS(on),max (TO252)
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB12CN10N G
IPD12CN10N G
IPI12CN10N G
IPP12CN10N G
Package
Marking
PG-TO263-3
12CN10N
PG-TO252-3
12CN10N
PG-TO262-3
12CN10N
PG-TO220-3
12CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
67
48
A
Pulsed drain current2)
I D,pulse
E AS
268
154
I D=67 A, R GS=25 W
Avalanche energy, single pulse
mJ
I D=67 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage3)
V GS
±20
V
P tot
T C=25 °C
Power dissipation
125
W
°C
T j, T stg
Operating and storage temperature
-55 ... 175
55/175/56
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3)
T
=150°C and duty cycle D=0.01 for Vgs<-5V
jmax
Rev. 1.08
page 1
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
-
-
-
-
1.2
62
40
75
50
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
minimal footprint
Thermal resistance, junction -
ambient (TO252)
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=83 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
3
4
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V DS=80 V, V GS=0 V,
T j=125 °C
-
-
-
10
1
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=67 A,
(TO252)
R DS(on)
Drain-source on-state resistance
9.3
12.4
12.6
mW
V GS=10 V, I D=67 A,
(TO263)
-
9.5
V GS=10 V, I D=67 A,
(TO220, TO262)
-
-
9.8
1.5
77
12.9
R G
g fs
Gate resistance
-
-
W
|V DS|>2|I D|R DS(on)max
I D=67 A
,
Transconductance
39
S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.08
page 2
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3250
489
29
4320 pF
650
V GS=0 V, V DS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
44
17
26
32
48
12
ns
V DD=50 V, V GS=10 V,
I D=33.5 A,
21
t d(off)
t f
Turn-off delay time
Fall time
32
R G,ext=1.6 W
8
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
18
12
20
49
5.5
52
24
18
29
65
-
nC
Q gd
V DD=50 V, I D=67 A,
V GS=0 to 10 V
Q sw
Q g
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=50 V, V GS=0 V
69
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
67
A
T C=25 °C
I S,pulse
268
V GS=0 V, I F=67 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
-
V
t rr
Reverse recovery time
-
-
105
255
ns
V R=50 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 1.08
page 3
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
140
120
100
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
1 µs
102
10 µs
100
100 µs
0.5
1 ms
DC
101
10 ms
0.2
0.1
10-1
0.05
0.02
100
0.01
single pulse
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.08
page 4
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
30
10 V
8 V
5 V
4.5 V
7 V
25
20
15
10
5
200
150
5.5 V
6.5 V
6 V
100
6 V
10 V
5.5 V
50
5 V
4.5 V
0
0
0
1
2
3
4
5
0
20
40
60
80
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
250
200
150
100
50
100
80
60
40
20
0
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
VGS [V]
ID [A]
Rev. 1.08
page 5
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=67 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
30
25
20
4
3.5
3
830 µA
83 µA
2.5
2
98 %
15
typ
1.5
1
10
5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
25 °C
104
175 °C
175 °C, 98%
102
Ciss
Coss
103
25 °C, 98%
101
Crss
102
101
100
0
0
20
40
60
80
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 1.08
page 6
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=67 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
1000
12
10
8
50 V
20 V
100
80 V
6
25 °C
100 °C
150 °C
10
4
2
1
0
1
10
100
1000
0
10
20
30
40
50
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
115
110
105
100
95
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.08
page 7
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO220-3: Outline
Rev. 1.08
page 8
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO262-3-1 (I²PAK)
Rev. 1.08
page 9
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.08
page 10
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO252-3: Outline
Rev. 1.08
page 11
2013-07-09
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.08
page 12
2013-07-09
相关型号：
IPB12CN10NG_10
OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
INFINEON
IPB12CNE8NGATMA1
Power Field-Effect Transistor, 67A I(D), 85V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB12CNE8N_07
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
INFINEON
IPB136N08N3G
Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB144N12N3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
INFINEON
IPB144N12N3GATMA1
Power Field-Effect Transistor, 56A I(D), 120V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明