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IPB147N03LG [INFINEON]

OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS; OptiMOS®3电源晶体管具有快速开关MOSFET的开关电源
IPB147N03LG
型号： IPB147N03LG
厂家： Infineon    Infineon
描述：

OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
OptiMOS®3电源晶体管具有快速开关MOSFET的开关电源

晶体 开关 晶体管
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IPP147N03L G  
IPB147N03L G  
OptiMOS™3 Power-Transistor  
Features  
Product Summary  
V DS  
30  
14.7  
20  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
R DS(on),max  
I D  
mΩ  
A
• Qualified according to JEDEC1) for target applications  
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
IPP147N03L G  
IPB147N03L G  
Package  
Marking  
PG-TO220-3-1  
147N03L  
PG-TO263-3  
147N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
20  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
A
GS=10 V, T C=100 °C  
20  
V
V
GS=4.5 V, T C=25 °C  
20  
20  
GS=4.5 V,  
T C=100 °C  
T C=25 °C  
T C=25 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
140  
20  
Avalanche current, single pulse3)  
E AS  
I D=10 A, R GS=25 Ω  
Avalanche energy, single pulse  
20  
mJ  
I D=20 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=175 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 2.0  
page 1  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
P tot  
T C=25 °C  
Power dissipation  
31  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
°C  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
SMD version, device on PCB  
-
-
-
-
-
-
4.9  
62  
40  
K/W  
R thJA  
minimal footprint  
6 cm² cooling area4)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=1 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
30  
1
-
-
-
V
DS=V GS, I D=250 µA  
2.2  
V
DS=30 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.1  
10  
1
µA  
T j=25 °C  
V
DS=30 V, V GS=0 V,  
100  
T j=125 °C  
I GSS  
V
V
V
GS=20 V, V DS=0 V  
GS=4.5 V, I D=20 A  
GS=10 V, I D=20 A  
Gate-source leakage current  
Drain-source on-state resistance5)  
-
-
-
-
10  
100 nA  
R DS(on)  
17.4  
12.3  
1.2  
21.7  
14.7  
-
mΩ  
R G  
g fs  
Gate resistance  
Ω
|V DS|>2|I D|R DS(on)max  
I D=20 A  
,
Transconductance  
17  
34  
-
S
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
5) Measured from drain tab to source pin  
Rev. 2.0  
page 2  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C iss  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
-
-
-
-
-
-
-
770  
350  
16  
1000 pF  
V
GS=0 V, V DS=15 V,  
C oss  
Crss  
t d(on)  
t r  
470  
-
f =1 MHz  
3.1  
2.4  
12  
-
-
-
-
ns  
V
DD=15 V, V GS=10 V,  
I D=20 A, R G=1.6 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
2.0  
Gate Charge Characteristics5)  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
2.7  
1.2  
1.2  
2.7  
4.8  
3.5  
-
-
-
-
-
-
nC  
Q g(th)  
Q gd  
V
V
DD=15 V, I D=20 A,  
GS=0 to 4.5 V  
Q sw  
Q g  
Gate charge total  
V plateau  
Gate plateau voltage  
V
V
V
DD=15 V, I D=20 A,  
GS=0 to 10 V  
Q g  
Gate charge total  
-
10  
-
V
V
DS=0.1 V,  
Q g(sync)  
Q oss  
Gate charge total, sync. FET  
Output charge  
-
-
4.2  
9.0  
-
-
nC  
GS=0 to 4.5 V  
V
DD=15 V, V GS=0 V  
Reverse Diode  
I S  
Diode continuous forward current  
Diode pulse current  
-
-
-
-
20  
A
T C=25 °C  
I S,pulse  
140  
V
GS=0 V, I F=20 A,  
V SD  
Q rr  
Diode forward voltage  
-
-
0.95  
-
1.2  
10  
V
T j=25 °C  
V R=15 V, I F=I S,  
di F/dt =400 A/µs  
Reverse recovery charge  
nC  
6) See figure 16 for gate charge parameter definition  
Rev. 2.0  
page 3  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
1 Power dissipation  
2 Drain current  
P
tot=f(T C)  
I D=f(T C); V GS≥10 V  
40  
25  
20  
15  
10  
5
30  
20  
10  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
C [°C]  
T
C [°C]  
3 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
thJC=f(t p)  
Z
parameter: D =t p/T  
103  
10  
limited by on-state  
resistance  
0.5  
1 µs  
102  
101  
100  
10-1  
0.2  
10 µs  
1
0.1  
100 µs  
0.05  
0.02  
0.01  
DC  
1 ms  
0.1  
single pulse  
10 ms  
0
0
0
0
0
0
1
0.01  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
p [s]  
10-2  
10-1  
100  
V
DS [V]  
t
Rev. 2.0  
page 4  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
6 Typ. drain-source on resistance  
DS(on)=f(I D); T j=25 °C  
R
parameter: V GS  
parameter: V GS  
80  
32  
5 V  
28  
10 V  
4 V  
3.5 V  
4.5 V  
4.5 V  
60  
40  
20  
0
24  
20  
16  
12  
8
4 V  
5 V  
10 V  
11.5 V  
3.5 V  
3.2 V  
3 V  
4
2.8 V  
0
0
1
2
3
0
20  
40  
60  
80  
100  
V
DS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
90  
80  
70  
60  
50  
40  
30  
20  
80  
60  
40  
20  
0
10  
175 °C  
25 °C  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
V
GS [V]  
ID [A]  
Rev. 2.0  
page 5  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
R
DS(on)=f(T j); I D=20 A; V GS=10 V  
V
GS(th)=f(T j); V GS=V DS; I D=250 µA  
28  
24  
20  
2.5  
2
1.5  
1
98 %  
16  
typ  
12  
8
4
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
T j [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
104  
1000  
103  
25 °C  
Ciss  
100  
10  
Coss  
102  
101  
100  
175 °C, 98%  
25 °C, 98%  
175 °C  
Crss  
1
0
10  
20  
30  
0.0  
0.5  
1.0  
SD [V]  
1.5  
2.0  
V
DS [V]  
V
Rev. 2.0  
page 6  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
13 Avalanche characteristics  
AS=f(t AV); R GS=25 Ω  
14 Typ. gate charge  
GS=f(Q gate); I D=20 A pulsed  
V
I
parameter: T j(start)  
parameter: V DD  
100  
12  
15 V  
6 V  
24 V  
10  
8
25 °C  
10  
6
100 °C  
150 °C  
4
2
1
0
0
10-1  
100  
101  
102  
103  
6
12  
t
AV [µs]  
Q
gate [nC]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
BR(DSS)=f(T j); I D=1 mA  
34  
32  
30  
28  
26  
24  
22  
20  
V GS  
Q g  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
Rev. 2.0  
page 7  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
Package Outline  
PG-TO220-3-1  
Rev. 2.0  
page 8  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
Package Outline  
PG-TO263-3  
Rev. 2.0  
page 9  
2010-04-27  
IPP147N03L G  
IPB147N03L G  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2006.  
All Rights Reserved.  
Attention please!  
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device, Infineon Technologies  
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com ).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types  
in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express  
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to  
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or  
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or  
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the  
user or other persons may be endangered.  
Rev. 2.0  
page 10  
2010-04-27  

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