IPB180N04S400ATMA1 [INFINEON]
Power Field-Effect Transistor, 180A I(D), 40V, 0.00098ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6;
| 型号： | IPB180N04S400ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 180A I(D), 40V, 0.00098ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB180N04S4-00
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
RDS(on)
ID
40
V
0.98
180
mW
A
Features
• N-channel - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB180N04S4-00
PG-TO263-7-3
4N0400
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, V GS=10V1)
I D
Continuous drain current
180
180
A
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
720
1250
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=90 A
mJ
A
I AS
-
180
V GS
-
±20
V
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.1
page 1
2015-10-07
IPB180N04S4-00
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
0.5
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=230 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.0
3.0
4.0
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
1
1
µA
V DS=18 V, V GS=0 V,
T j=85 °C2)
20
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
100 nA
RDS(on) V GS=10 V, I D=100 A
Drain-source on-state resistance
-
0.8
0.98 mΩ
Rev. 1.1
page 2
2015-10-07
IPB180N04S4-00
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
17600
3780
130
53
22880 pF
4900
V GS=0 V, V DS=25 V,
f =1 MHz
300
-
-
-
-
ns
24
V DD=20 V, V GS=10 V,
I D=180 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
67
58
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
87
29
113 nC
67
Q gd
V DD=32 V, I D=180 A,
V GS=0 to 10 V
Q g
220
5.0
286
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
180
720
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
85
-
-
ns
V R=20 V, I F=50A,
di F/dt =100 A/µs
Reverse recovery charge2)
Q rr
132
nC
1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 425A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2015-10-07
IPB180N04S4-00
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
350
300
250
200
150
100
50
200
180
160
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
1 µs
10 µs
0.5
100 µs
1 ms
10-1
100
10
1
0.1
0.05
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.1
page 4
2015-10-07
IPB180N04S4-00
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
6
700
10 V
5 V
5.5 V
6 V
7 V
6.5 V
600
5
4
3
2
1
0
6 V
500
400
300
200
100
0
5.5 V
6.5 V
7 V
5 V
10 V
0
100
200
300
400
500
600
0
2
4
6
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
720
630
540
450
360
1.5
1.25
1
270
175 °C
0.75
0.5
180
25 °C
90
-55 °C
0
-60
-20
20
60
100
140
180
2
4
6
8
Tj [°C]
VGS [V]
Rev. 1.1
page 5
2015-10-07
IPB180N04S4-00
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
104
103
102
4
3.5
3
Ciss
2300 µA
Coss
230 µA
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
25 °C
100
100 °C
150 °C
25 °C
175 °C
101
10
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.1
page 6
2015-10-07
IPB180N04S4-00
13 Typical avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
3000
45 A
2500
42
40
38
2000
1500
90 A
1000
180 A
500
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 180 A pulsed
parameter: V DD
12
10
8
VGS
Q g
8 V
32 V
6
4
Qgate
2
Qgd
Q gs
0
0
40
80
120
160
200
240
Qgate [nC]
Rev. 1.1
page 7
2015-10-07
IPB180N04S4-00
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2015-10-07
IPB180N04S4-00
Revision History
Version
Date
Changes
Revision 1.0
Revision 1.1
2010-04-13 Final Data Sheet
2015-10-07 Update of labeling of diagram 6
Rev. 1.1
page 9
2015-10-07
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