IPB180N04S4L-H0 [INFINEON]
本培训解释了TOLG的优势以及该封装的目标工业应用和汽车应用;并列出了当前可用的产品系列,以及您可以通过使用该封装获得哪些好处。;型号: | IPB180N04S4L-H0 |
厂家: | Infineon |
描述: | 本培训解释了TOLG的优势以及该封装的目标工业应用和汽车应用;并列出了当前可用的产品系列,以及您可以通过使用该封装获得哪些好处。 |
文件: | 总9页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
IPB180N04S4L-H0
OptiMOSTM-T2 Power-Transistor
Product Summary
VDS
RDS(on)
ID
40
1.0
180
V
mΩ
A
Features
• N-channel Logic Level - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB180N04S4L-H0
PG-TO263-7-3
4N04LH0
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, VGS=10V1)
I D
Continuous drain current
180
180
A
T C=100 °C,
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
720
850
I D=90 A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
180
VGS
Ptot
-
+20/-16
250
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2013-05-27
Data Sheet
Conditions
IPB180N04S4L-H0
Values
Parameter
Symbol
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.6
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D= 1 mA
VGS(th) VDS=VGS, I D=180 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.7
2.2
VDS=40 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.08
1
1
µA
V
DS=18 V, VGS=0 V,
20
T j=85 °C2)
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=4.5 V, I D=50 A
Drain-source on-state resistance
1.1
0.8
1.4
1.0
mΩ
V
GS=10 V, I D=100 A
Rev. 1.0
page 2
2013-05-27
Data Sheet
Conditions
IPB180N04S4L-H0
Values
Parameter
Symbol
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
18800
3070
160
25
24440 pF
3990
V
GS=0 V, VDS=25 V,
f =1 MHz
370
-
-
-
-
ns
30
V
DD=20 V, VGS=10 V,
I D=180 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
120
100
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
52
26
68
60
310
-
nC
Q gd
VDD=32 V, I D=180 A,
GS=0 to 10 V
V
Q g
239
2.8
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
180
720
T C=25 °C
I S,pulse
VGS=0 V, I F=100 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
80
-
-
ns
VR=20 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
130
nC
1) Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 380A at 25°C.
2) Defined by design. Not subject to production test.
Rev. 1.0
page 3
2013-05-27
Data Sheet
IPB180N04S4L-H0
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
300
250
200
150
100
50
200
160
120
80
40
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
100
10
1 µs
10 µs
0.5
100 µs
1 ms
10-1
0.1
0.05
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2013-05-27
Data Sheet
IPB180N04S4L-H0
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
10
720
3 V
10 V
3.5 V
4.5 V
4 V
630
540
450
360
270
180
90
8
6
4
2
0
4 V
3.5 V
4.5 V
3 V
10 V
0
0
180
360
540
720
0
1
2
3
4
5
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
720
630
540
450
360
270
180
90
1.5
1.25
1
-55 °C
25 °C
175 °C
0.75
0.5
0
-60
-20
20
60
100
140
180
1
2
3
4
5
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2013-05-27
Data Sheet
IPB180N04S4L-H0
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
2
1.75
1.5
Ciss
1800 µA
104
103
102
101
180 µA
Coss
1.25
1
0.75
0.5
Crss
0.25
0
0
5
10
15
20
25
30
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
25 °C
100
100 °C
150 °C
25 °C
175 °C
101
10
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2013-05-27
Data Sheet
IPB180N04S4L-H0
13 Typical avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
E
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
2000
45 A
1500
1000
500
0
42
40
38
90 A
180 A
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 180 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
VGS
Qg
8 V
32 V
Qgate
Qgd
Qgs
0
0
50
100
150
200
250
Qgate [nC]
Rev. 1.0
page 7
2013-05-27
Data Sheet
IPB180N04S4L-H0
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2013
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2013-05-27
Data Sheet
IPB180N04S4L-H0
Revision History
Version
Date
Changes
27.05.2013 Data Sheet
Revision 1.0
Rev. 1.0
page 9
2013-05-27
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