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IPB180N04S4L01ATMA1 [INFINEON]

Power Field-Effect Transistor, 180A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN;

IPB180N04S4L01ATMA1


元器件型号：	IPB180N04S4L01ATMA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 180A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN 脉冲晶体管
PDF文件：	总9页 (文件大小：215K)
下载文档：	下载PDF数据表文档文件
型号参数：IPB180N04S4L01ATMA1参数

IPB180N04S4LH0ATMA1

Power Field-Effect Transistor, 180A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN

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1 INFINEON

IPB180N06S4-H1

OptiMOS-T2 Power-Transistor

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63 INFINEON

IPB180N06S4H1ATMA1

Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

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0 INFINEON

IPB180N06S4H1ATMA2

Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,

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0 INFINEON

IPB180N08S402ATMA1

Power Field-Effect Transistor, 180A I(D), 80V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,

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0 INFINEON

IPB180N10S402ATMA1

Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

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2 INFINEON

IPB180N10S403ATMA1

Power Field-Effect Transistor, 180A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

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2 INFINEON

IPB180P04P4-03

OptiMOS-P2 Power-Transistor

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25 INFINEON

IPB180P04P403ATMA1

Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

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0 INFINEON

IPB180P04P403ATMA2

Power Field-Effect Transistor,

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0 INFINEON

IPB180P04P4L-02

OptiMOS-P2 Power-Transistor

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90 INFINEON

IPB200N15N3

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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91 INFINEON

IPB200N15N3G

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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46 INFINEON

IPB200N15N3GATMA1

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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0 INFINEON

IPB200N25N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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170 INFINEON

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