select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPB180P04P403ATMA1_技术文档

IPB180P04P403ATMA1 [INFINEON]

Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6;
IPB180P04P403ATMA1
型号: IPB180P04P403ATMA1
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

脉冲 晶体管
文件: 总9页 (文件大小:266K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPB180P04P403ATMA2

Power Field-Effect Transistor,

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB180P04P4L-02

OptiMOS-P2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N15N3

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N15N3 G

与次优竞品相比,150V OptiMOS™ R DS(on) 降低 40%,品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性,如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N15N3G

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N15N3GATMA1

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N25N3 G

英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术,完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N25N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N25N3GATMA1

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB200N25N3G_10

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB22N03S4L-15

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB22N03S4L-15

22A, 30V, 0.0146ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ROCHESTER

IPB22N03S4L15ATMA1

Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB230N06L3G

OptiMOS?3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB230N06L3GATMA1

Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB240N04S4-1R0

Power Field-Effect Transistor, 240A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263-7-3, 7/6 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB240N04S4-R9

车规级MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB240N04S41R0ATMA1

Power Field-Effect Transistor, 240A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263-7-3, 7/6 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB25N06S3-25

OptiMOS㈢-T Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB25N06S3-25_07

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON