IPB200N15N3 [INFINEON]
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM); OptiMOS®3电源晶体管特性优良的栅极电荷X R DS ( ON)的乘积( FOM )型号: | IPB200N15N3 |
厂家: | Infineon |
描述: | OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |
文件: | 总12页 (文件大小:551K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPB200N15N3 G
与次优竞品相比,150V OptiMOS™ R DS(on) 降低 40%,品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性,如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB200N15N3G
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB200N15N3GATMA1
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IPB200N25N3 G
英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术,完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPB200N25N3G
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB200N25N3GATMA1
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INFINEON
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INFINEON
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IPB22N03S4L-15
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ROCHESTER
IPB22N03S4L15ATMA1
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INFINEON
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INFINEON
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