IPB240N04S4-R9 [INFINEON]
车规级MOSFET;
| 型号： | IPB240N04S4-R9 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB240N04S4-R9
OptiMOS™-T2 Power-Transistor
Product Summary
V DS
R DS(on)
I D
40
V
0.87
240
mW
A
Features
• N-channel - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB240N04S4-R9
PG-TO263-7-3
4N04R9
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, V GS=10V1)
I D
Continuous drain current
240
240
A
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25 °C
960
750
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=120 A
mJ
A
-
190
V GS
P tot
-
±20
V
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.1
page 1
2014-04-07
IPB240N04S4-R9
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
0.5
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=230 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.0
3.0
4.0
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
20
1
µA
V DS=18 V, V GS=0 V,
T j=85 °C2)
240
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
100 nA
RDS(on) V GS=10 V, I D=100 A
Drain-source on-state resistance
-
-
0.87 mΩ
Rev. 1.1
page 2
2014-04-07
IPB240N04S4-R9
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
17700
3850
150
55
23000 pF
5000
V GS=0 V, V DS=25 V,
f =1 MHz
345
-
-
-
-
ns
V DD=20 V, V GS=10 V,
I D=240 A,
28
t d(off)
t f
Turn-off delay time
Fall time
64
R G,ext=3.5 W
59
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
90
32
117 nC
65
Q gd
V DD=32 V, I D=240 A,
V GS=0 to 10 V
Q g
220
5.4
290
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
240
960
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
85
-
-
ns
V R=20 V, I F=50A,
di F/dt =100 A/µs
Reverse recovery charge2)
Q rr
130
nC
1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 451A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-07
IPB240N04S4-R9
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
350
300
250
200
150
100
50
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
1 µs
10 µs
100 µs
0.5
1 ms
10-1
100
0.1
0.05
10-2
10
0.01
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.1
page 4
2014-04-07
IPB240N04S4-R9
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
4
1000
6 V
7 V
900
5 V
6.5 V
10 V
800
3
2
1
0
700
600
500
400
300
200
100
6 V
6 V
5.5 V
6.5 V
7 V
10 V
5 V
7 V
0
0
100
I D [A]
200
0
2
4
6
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
1000
900
800
700
600
500
400
300
1.3
1.1
0.9
0.7
0.5
200
175 °C
25 °C -55 °C
100
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T j [°C]
V GS [V]
Rev. 1.1
page 5
2014-04-07
IPB240N04S4-R9
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
104
103
102
4
3.5
3
Ciss
2300 µA
Coss
230 µA
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
35
40
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Typ. avalanche characteristics
I AS = f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
1000
100 °C
25 °C
150 °C
102
100
25 °C
175 °C
101
10
100
0
1
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
t AV [µs]
100
1000
V SD [V]
Rev. 1.1
page 6
2014-04-07
IPB240N04S4-R9
13 Typical avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
700
60 A
600
500
400
42
40
38
120 A
300
190 A
200
100
0
-60
-20
20
60
100
140
180
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 240 A pulsed
parameter: V DD
10
9
8
7
6
5
4
3
2
1
0
VGS
8 V
32 V
Q g
Qgate
Qgd
Q gs
0
40
80
120
160
200
240
Q gate [nC]
Rev. 1.1
page 7
2014-04-07
IPB240N04S4-R9
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2014-04-07
IPB240N04S4-R9
Revision History
Version
Date
Changes
16.08.2013 Final Data Sheet
Changed Hot Temperature IDSS
Revision 1.0
07.04.2014 Changed Dynamic Values
Changed EAS
Revision 1.1
Rev. 1.1
page 9
2014-04-07
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