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IPB50N12S3L-15 [INFINEON]

Power Field-Effect Transistor;
IPB50N12S3L-15
型号： IPB50N12S3L-15
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor
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IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
120  
15.4  
50  
V
RDS(on),max (SMD version)  
mW  
A
ID  
Features  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Type  
Package  
Marking  
IPB50N12S3L-15  
IPI50N12S3L-15  
IPP50N12S3L-15  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N12L15  
3N12L15  
3N12L15  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
I D  
T C=25 °C, VGS=10 V  
Continuous drain current  
50  
37  
A
T C=100 °C,  
VGS=10 V1)  
Pulsed drain current1)  
I D,pulse  
EAS  
T C=25 °C  
200  
330  
50  
Avalanche energy, single pulse1)  
Avalanche current, single pulse  
Gate source voltage  
I D=25A  
mJ  
A
I AS  
-
VGS  
-
±20  
100  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Thermal characteristics1)  
R thJC  
R thJA  
R thJA  
Thermal resistance, junction - case  
-
-
-
-
-
-
1.5  
62  
K/W  
Thermal resistance, junction -  
ambient, leaded  
SMD version, device on PCB  
minimal footprint  
-
-
-
-
62  
40  
6 cm2 cooling area2)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V(BR)DSS VGS=0V, I D= 1mA  
VGS(th) VDS=VGS, I D=60µA  
Drain-source breakdown voltage  
Gate threshold voltage  
120  
1.2  
-
-
V
1.7  
2.4  
VDS=120V, VGS=0V,  
T j=25°C  
I DSS  
Zero gate voltage drain current  
-
-
0.01  
1
0.1  
10  
µA  
VDS=120V, VGS=0V,  
T j=125°C2)  
I GSS  
VGS=20V, VDS=0V  
Gate-source leakage current  
-
-
-
100 nA  
R DS(on) VGS=4.5V, I D=50A  
Drain-source on-state resistance  
16.1  
20.9  
20.6  
15.7  
15.4  
mW  
VGS=4.5V, I D=50A,  
SMD version  
-
-
-
15.8  
13.1  
12.8  
VGS=10V, I D=50A  
VGS=10V, I D=50A,  
SMD version  
Rev. 1.0  
page 2  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Dynamic characteristics1)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
C oss  
Crss  
t d(on)  
t r  
-
-
-
-
-
-
-
3215  
730  
63  
10  
5
4180 pF  
949  
VGS=0V, VDS=25V,  
f =1MHz  
95  
-
-
-
-
ns  
VDD=20 V, VGS=10 V,  
I D=50 A, R G=3.5 W  
t d(off)  
t f  
Turn-off delay time  
Fall time  
28  
5
Gate Charge Characteristics1)  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
11  
8
14  
12  
57  
-
nC  
Q gd  
VDD=96V, I D=70A,  
VGS=0 to 10V  
Q g  
44  
3.7  
Vplateau  
Gate plateau voltage  
V
A
Reverse Diode  
Diode continous forward current1)  
Diode pulse current1)  
I S  
-
-
-
-
50  
T C=25°C  
I S,pulse  
200  
VGS=0 V, I F=50 A,  
T j=25 °C  
VSD  
Diode forward voltage  
0.6  
1
1.2  
V
VR=50V, I F=I S,  
diF/dt =100A/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
t rr  
-
-
80  
-
-
ns  
nC  
Q rr  
185  
1) Defined by design. Not subject to production test.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air  
Rev. 1.0  
page 3  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
1 Power dissipation  
2 Drain current  
Ptot = f(T C); VGS = 10 V  
I D = f(T C); VGS = 10 V; SMD  
120  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TC [°C]  
TC [°C]  
3 Safe operating area  
4 Max. transient thermal impedance  
Z thJC = f(t p)  
I D = f(V DS); T C = 25 °C; D = 0; SMD  
parameter: t p  
parameter: D =t p/T  
101  
1000  
1 µs  
100  
0.5  
10 µs  
100  
0.1  
100 µs  
0.05  
10-1  
0.01  
1 ms  
10  
10-2  
single pulse  
10-3  
1
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
0.1  
1
10  
VDS [V]  
100  
1000  
tp [s]  
Rev. 1.0  
page 4  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
5 Typ. output characteristics  
I D = f(V DS); T j = 25 °C; SMD  
parameter: VGS  
6 Typ. drain-source on-state resistance  
R DS(on) = f(I D); T j = 25 °C; SMD  
parameter: VGS  
200  
36  
10 V  
5 V  
180  
160  
140  
120  
100  
80  
3 V  
3.5 V  
4.5 V  
4 V  
28  
20  
12  
4 V  
60  
4.5 V  
5 V  
3.5 V  
3 V  
40  
20  
10 V  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
VDS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D = f(V GS); VDS = 6V  
parameter: T j  
8 Typ. drain-source on-state resistance  
R DS(on) = f(T j); I D = 50 A; VGS = 10 V; SMD  
150  
100  
50  
30  
25  
20  
15  
10  
5
-55 °C  
25 °C  
175 °C  
0
1
2
3
4
5
-60  
-20  
20  
60  
100  
140  
180  
VGS [V]  
Tj [°C]  
Rev. 1.0  
page 5  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
9 Typ. gate threshold voltage  
VGS(th) = f(T j); VGS = VDS  
parameter: I D  
10 Typ. capacitances  
C = f(VDS); VGS = 0 V; f = 1 MHz  
104  
2.5  
Ciss  
2
300 µA  
103  
102  
101  
Coss  
60 µA  
1.5  
1
0.5  
0
Crss  
0
5
10  
15  
20  
25  
30  
-60  
-20  
20  
60  
100  
140  
180  
VDS [V]  
Tj [°C]  
11 Typical forward diode characteristics  
12 Typ. avalanche characteristics  
I A S= f(t AV  
IF = f(VSD)  
)
parameter: T j  
parameter: Tj(start)  
103  
100  
25 °C  
100 °C  
102  
10  
150 °C  
175 °C  
25 °C  
101  
1
100  
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1
10  
100  
1000  
VSD [V]  
tAV [µs]  
Rev. 1.0  
page 6  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
13 Typical avalanche energy  
EAS = f(T j)  
14 Typ. drain-source breakdown voltage  
VBR(DSS) = f(T j); I D = 1 mA  
parameter: I D  
135  
600  
12.5 A  
500  
130  
125  
120  
115  
110  
400  
300  
25 A  
200  
50 A  
100  
0
-55  
-15  
25  
65  
105  
145  
25  
75  
125  
175  
Tj [°C]  
Tj [°C]  
15 Typ. gate charge  
16 Gate charge waveforms  
VGS = f(Q gate); I D = 50 A pulsed  
parameter: VDD  
10  
9
V GS  
Qg  
8
7
6
24 V  
96 V  
5
4
3
2
1
0
V gs(th)  
Qg(th)  
Qsw  
Qgd  
Qgate  
Qgs  
0
10  
20  
30  
40  
Qgate [nC]  
Rev. 1.0  
page 7  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© Infineon Technologies AG 2016  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions  
or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including  
without limitation warranties of non‑infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information  
on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the  
express written approval of Infineon Technologies, if a failure of such components can reasonably  
be expected to cause the failure of that life-support device or system, or to affect the safety or  
effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.  
If they fail, it is reasonable to assume that the health of the user or other persons may be  
endangered.  
Rev. 1.0  
page 8  
2016-06-20  
IPB50N12S3L-15  
IPI50N12S3L-15, IPP50N12S3L-15  
Revision History  
Version  
Date  
Changes  
Revision 1.0  
20.06.2016 Final Data Sheet  
Rev. 1.0  
page 9  
2016-06-20  

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