IPB60R380C6 [INFINEON]

Metal Oxide Semiconductor Field Effect Transistor; 金属氧化物半导体场效应晶体管


型号：	IPB60R380C6
厂家：	Infineon
描述：	Metal Oxide Semiconductor Field Effect Transistor 金属氧化物半导体场效应晶体管晶体半导体晶体管场效应晶体管
文件：	总19页 (文件大小：2060K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS C6

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Data Sheet

Rev. 2.0, 2009-08-27

Final

Industrial & Multimarket

600V CoolMOS™ C6 Power Transistor

IPD60R380C6, IPI60R380C6

IPB60R380C6, IPP60R380C6

IPA60R380C6

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. CoolMOS™ C6 series combines

the experience of the leading SJ MOSFET supplier with high class

innovation. The resulting devices provide all benefits of a fast switching

SJ MOSFET while not sacrificing ease of use. Extremely low switching

and conduction losses make switching applications even more efficient,

more compact, lighter, and cooler.

Features

drain

pin 2

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

JEDEC¹⁾qualified, Pb-free plating, Halogen free²⁾

gate

pin 1

source

pin 3

Applications

PFC stages, hard switching PWM stages and resonant switching PWM

stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,

Telecom, UPS and Solar.

Please note: For MOSFET paralleling the use of ferrite beads on the gate

or separate totem poles is generally recommended.

Table 1

Key Performance Parameters

Parameter

Value

650

0.38

Unit

_DS@ T_j,max

R_DS(on),max



Q_g,typ

I_D,pulse

_oss@ 400V

2.8

µJ

A/µs

Body diode di/dt

500

Type / Ordering Code

IPD60R380C6

IPI60R380C6

Package

Marking

Related Links

PG-TO252

PG-TO262

PG-TO263

PG-TO220

IFX C6 Product Brief

IFX C6 Portfolio

IPB60R380C6

IPP60R380C6

IPA60R380C6

6R380C6

IFX CoolMOS Webpage

IFX Design tools

PG-TO220 FullPAK

1) J-STD20 and JESD22

2) no PG-To252

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Min. Typ. Max.

Unit Note / Test Condition

Continuous drain current¹⁾

I_D

10.6

6.7

T_C= 25 °C

T_C= 100°C

T_C=25 °C

Pulsed drain current²⁾

I_D,pulse

E_AS

Avalanche energy, single pulse

210

I_D=1.8 A,V_DD=50 V

(see table 21)

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

E_AR

I_AR

0.32

1.8

I_D=1.8 A,V_DD=50 V

dv/dt

V_GS

V/ns V_DS=0...480 V

-20

-30

static

AC (f>1 Hz)

T_C=25 °C

Power dissipation for 

TO-220, TO-252, TO-262, TO-263

P_tot

°C

Power dissipation for 

TO-220 FullPAK

T_C=25 °C

Operating and storage temperature T_j,T_stg

-55

150

Mounting torque

Ncm M3 and M3.5 screws

TO-220

Mounting torque

M2.5 screws

TO-220 FullPAK

Continuous diode forward current

Diode pulse current²⁾

Reverse diode dv/dt³⁾

I_S

9.2

T_C=25 °C

I_S,pulse

dv/dt

V/ns V_DS=0...480 V,I_SD I_D,

T_j=125 °C

Maximum diode commutation

speed³⁾

di_f/dt

500

A/µs (see table 22)

1) Limited by T_j,max.Maximum duty cycle D=0.75

2) Pulse width t_plimited by T_j,max

3) Identical low side and high side switch with identical R_G

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Thermal characteristics

Table 3

Thermal characteristics TO-220 (IPP60R380C6),TO-262 (IPI60R380C6)

Parameter

Symbol

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

1.5

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 4

Thermal characteristics TO-220FullPAK (IPA60R380C6)

Symbol Values

Typ.

Parameter

Unit

Note /

Test Condition

Min.

Max.

4.0

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 5

Thermal characteristics TO-263 (IPB60R380C6),TO-252 (IPD60R380C6)

Parameter

Symbol

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

1.5

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

SMD version, device

on PCB, minimal

footprint

SMD version, device

on PCB, 6cm²cooling

area¹⁾

Soldering temperature,

T_sold

260

°C

reflow MSL1

wave- & reflowsoldering allowed

1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for drain connection. PCB is

vertical without air stream cooling.

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Table 6

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

600

2.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=0.25 mA

V_DS=V_GS, I_D=0.32 mA

Gate threshold voltage

V_GS(th)

I_DSS

3.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.34

0.38



V_GS=10 V, I_D=3.8 A,

T_j=25 °C

0.89

V_GS=10 V, I_D=3.8 A,

T_j=150 °C

Gate resistance

R_G



f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

700

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

136

I_D=constant, V_GS=0 V

V_DS=0...480V

related²⁾

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

110

V_DD=400 V,

V_GS=13 V, I_D=4.8A,

R_G= 3.4 

Turn-off delay time

Fall time

(see table 20)

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics

Table 8

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

IGate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=480 V, I_D=4.8 A,

V_GS=0 to 10 V

Q_gd

5.4

Q_g

Gate plateau voltage

V_plateau

Table 9

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=4.8A,

T_j=25 °C

Reverse recovery time

t_rr

290

3.3

µC

V_R=400 V, I_F=4.8 A,

di_F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics diagrams

Table 10

Power dissipation

TO-220, TO-252, TO-262, TO-263

TO-220 FullPAK

P_tot= f(T_C)

Table 11

Max. transient thermal impedance

TO-220, TO-252, TO-262, TO-263

Max. transient thermal impedance

TO-220 FullPAK

_(thJC)=f(tp); parameter: D=t_p/T

Z_(thJC)=f(tp); parameter: D=t_p/T

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics diagrams

Table 12

Safe operating area T_C=25 °C

TO-220, TO-252, TO-262, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=25 °C; D=0; parameter t_p

Table 13

Safe operating area T_C=80 °C

TO-220, TO-252, TO-262, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=80 °C; D=0; parameter t_p

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics diagrams

Table 14

Typ. output characteristics T_j=25 °C

Typ. output characteristics T_j=125 °C

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

I_D=f(V_DS); T_j=125 °C; parameter: V_GS

Table 15

Typ. drain-source on-state resistance

Drain-source on-state resistance

_DS(on)=f(I_D); T_j=125 °C; parameter: V_GS

R_DS(on)=f(T_j); I_D=3.8 A; V_GS=10 V

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics diagrams

Table 16

Typ. transfer characteristics

Typ. gate charge

I_D=f(V_GS); V_DS=20V

_GS=f(Q_gate), I_D=4.8A pulsed

Table 17

Avalanche energy

Drain-source breakdown voltage

E_AS=f(T_j); I_D=1.8 A; V_DD=50 V

V_BR(DSS)=f(T_j); I_D=0.25 mA

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Electrical characteristics diagrams

Table 18

Typ. capacitances

Typ. C_ossstored energy

C=f(V_DS); V_GS=0 V; f=1 MHz

E_OSS=f(V_DS)

Table 19

Forward characteristics of reverse diode

I_F=f(V_SD); parameter: T_j

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Test circuits

Table 20

Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load

Switching time waveform

V_DS

90%

V_DS

V_GS

10%

V_GS

t_{d( off)}

t_d(on)

t_on

t_f

t_r

t_off

Table 21

Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Table 22

Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

I_D

di_F/dt

t_rr

Q_rr

t_S

Q_S

t_rr

t_F

R_G1

Q_F

t_F

Ι_F

t_S

V_DS

10% Ι_RRM

di_rr/dt

R_G2

Q_S

Q_F

Ι_RRM

RRM

90% Ι_RRM

R_G1= R_G2

SIL00088

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Package outlines

Figure 1

Outlines TO-252, dimensions in mm/inches

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Package outlines

Figure 2

Outlines TO-220, dimensions in mm/inches

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Package outlines

Figure 3

Outlines TO-220 FullPAK, dimensions in mm/inches

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Package outlines

Figure 4

Outlines TO-262, dimensions in mm/inches

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Package outlines

Figure 5

Outlines TO-263, dimensions in mm/inches

FinalData Sheet

Rev. 2.0, 2009-08-27

600V CoolMOS™ C6 Power Transistor

IPx60R380C6

Revision History

CoolMOS C6 600V CoolMOS™ C6 Power Transistor

Revision History: 2009-08-27, Rev. 2.0

Previous Revision:

Revision Subjects (major changes since last revision)

2.0

Release of final data sheet

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2009-08-27

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

FinalData Sheet

Rev. 2.0, 2009-08-27

IPB60R380C6 [INFINEON]

相关型号：

IPB60R380C6ATMA1

IPB60R380P6

IPB60R380P6_15

IPB60R385CP

IPB60R385CPATMA1

IPB60R520CP

IPB60R600C6

IPB60R600C6ATMA1

IPB60R600CP

IPB60R950C6

IPB60R950C6ATMA1

IPB64N25S3-20