IPB60R380P6 [INFINEON]
Material Content Data Sheet;
| 型号： | IPB60R380P6 |
| 厂家： | 
Infineon |
| 描述： | Material Content Data Sheet |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Material Content Data Sheet
Sales Product Name IPB60R230P6
Issued
27. August 2015
1563.46 mg
MA#
MA001393638
PG-TO263-3-2
Package
Weight*
Average
Mass
[%]
Average
CAS#
Weight
[mg]
Sum
Mass
[%]
Sum
Construction Element
Material Group
Substances
[ppm]
if applicable
[ppm]
chip
inorganic material
non noble metal
inorganic material
non noble metal
non noble metal
organic material
plastics
silicon
7440-21-3
7439-89-6
7723-14-0
7440-50-8
7429-90-5
1333-86-4
-
6.823
0.304
0.44
0.02
0.01
19.45
1.75
0.63
6.98
34.70
0.63
0.01
0.00
0.01
0.01
0.30
0.04
0.01
35.01
0.44
4364
195
4364
leadframe
iron
phosphorus
copper
0.091
58
304.026
27.297
9.924
19.48
1.75
194457
17460
6347
69821
346987
6254
146
194710
17460
wire
aluminium
carbon black
epoxy resin
silicondioxide
tin
encapsulation
109.162
542.502
9.777
inorganic material
non noble metal
non noble metal
inorganic material
noble metal
60676-86-0
7440-31-5
7440-02-0
7723-14-0
7440-22-4
7440-31-5
7439-92-1
7439-89-6
7723-14-0
7440-50-8
42.31
0.63
423155
6254
leadfinish
plating
nickel
0.228
phosphorus
silver
0.001
0.01
0.32
1
146
solder
0.124
79
non noble metal
non noble metal
non noble metal
inorganic material
non noble metal
< 10%
tin
0.099
63
lead
4.726
3023
351
3165
heatspreader
*deviation
iron
0.548
phosphorus
copper
0.165
105
547.666
35.06
350289
350746
Sum in total: 100.00
1000000
Important Remarks:
1.
2.
3.
Infineon Technologies AG provides full material declaration based on information provided by third parties and
has taken and continues to take reasonable steps to provide representative and accurate information.
Infineon Technologies AG and Infineon Technologies AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited information may not be available for release.
All statements are based on our present knowledge, are provided 'as is' and may be subject to change at any
time due to technical requirements and development without notification.
This product is in compliance with EU Directive 2011/65/EU (RoHS) and contains Pb according RoHS exemption
7a, Lead in high melting temperature type solders.
Company
Address
Internet
Infineon Technologies AG
81726 München
www.infineon.com
相关型号：
IPB60R385CPATMA1
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB60R600C6ATMA1
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB60R950C6ATMA1
Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB64N25S3-20
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
INFINEON
IPB65R041CFD7
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R041CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R041CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。
INFINEON
©2020 ICPDF网 联系我们和版权申明