IPB65R075CFD7A [INFINEON]
D2PAK 3 引脚封装中的 50mOhm IPB65R050CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。;
| 型号： | IPB65R075CFD7A |
| 厂家： | 
Infineon |
| 描述： | D2PAK 3 引脚封装中的 50mOhm IPB65R050CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。 |
| 文件： | 总14页 (文件大小：1477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB65R075CFD7A
MOSFET
D²PAK
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading
automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe
well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe
automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan
integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant
switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.
tab
2
1
3
Features
•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody
diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQrr
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀ100%ꢀavalancheꢀtested
Drain
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages
Pin 2, Tab
*1
Benefits
Gate
Pin 1
•ꢀOptimizedꢀforꢀhigherꢀbatteryꢀvoltagesꢀupꢀtoꢀ475ꢀVꢀthanksꢀtoꢀfurther
improvedꢀrobustness
•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies
•ꢀHighꢀqualityꢀandꢀreliability
Source
Pin 3
*1: Internal body diode
•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions
Potentialꢀapplications
SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:
•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,
•ꢀOn-BoardꢀbatteryꢀChargers
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀAECꢀQ101
Pleaseꢀnote:ꢀForꢀproductionꢀpartꢀapprovalꢀprocessꢀ(PPAP)ꢀreleaseꢀwe
proposeꢀtoꢀshareꢀapplicationꢀrelatedꢀinformationꢀduringꢀanꢀearlyꢀdesign
phaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.ꢀPleaseꢀcontactꢀInfineonꢀsales
office.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
650
75
Unit
VDS
V
RDS(on),max
Qg,typ
mΩ
nC
A
68
ID,pulse
139
8.8
Eoss @ 400V
Body diode diF/dt
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB65R075CFD7A
PG-TO263-3
65A075F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
32
20
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
139
164
5.1
120
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
A
ID=5.1A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS,pulse
Ptot
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
frepetition<=100kHz, tpulse <= 2ns
171
150
150
-
W
°C
°C
TC=25°C
Storage temperature
Tstg
Tj
-55
-40
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current
Diode pulse current2)
IS
-
32
A
A
TC=25°C
IS,pulse
-
139
TC=25°C
VDS=0...400V,ꢀISD<=16.4A,ꢀTj=25°Cꢀꢀ
Reverse diode dv/dt3)
dv/dt
diF/dt
-
-
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=16.4A,ꢀTj=25°Cꢀꢀ
Maximum diode commutation speed
1300 A/µs
see table 8
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
Tsold
-
0.73
°C/W -
Soldering temperature, reflow soldering
allowed
-
-
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
For applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of
cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical
support by Infineon.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.82mA
-
-
-
1
-
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
µA
Ω
100
IGSS
-
-
0.1
VGS=20V,ꢀVDS=0V
-
-
0.063 0.075
0.14
VGS=10V,ꢀID=16.4A,ꢀTj=25°C
VGS=10V,ꢀID=16.4A,ꢀTj=150°C
RDS(on)
RG
-
-
5.8
-
Ω
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
3288
46
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
110
1153
31
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
14
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
114
4
VDD=400V,ꢀVGS=13V,ꢀID=16.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
1) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of
potential “linear mode”, please contact Infineon sales office.
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=16.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
21
Qg
68
Gate plateau voltage
Vplateau
5.7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=16.4A,ꢀTj=25°C
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
156
-
-
-
ns
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.86
10.1
µC
A
VR=400V,ꢀIF=16.4A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
175
103
102
101
100
10-1
10-2
150
125
100
75
1 µs
10 µs
100 µs
1 ms
50
25
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
102
101
0.5
0.2
1 µs
10 µs
10-1
100 µs
0.1
100
0.05
0.02
0.01
1 ms
10-1
single pulse
10-2
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
225
125
100
75
50
25
0
20 V
10 V
8 V
7 V
20 V
200
175
150
125
100
75
10 V
8 V
7 V
6 V
50
5.5 V
6 V
25
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.250
2.5
0.220
0.190
2.0
1.5
1.0
0.5
10 V
5.5 V
6.5 V
7 V
6 V
20 V
0.160
0.130
0.100
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=16.4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
250
12
10
8
400 V
120 V
200
150
100
50
25 °C
6
150 °C
4
2
0
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
90
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=16.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
180
150
120
90
60
30
0
101
25 °C
125 °C
100
10-1
0.0
0.3
0.6
0.9
1.2
1.5
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.1ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
720
105
104
103
102
101
100
700
680
660
640
620
600
Ciss
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
11
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7AꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7Aꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7Aꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2021-11-23
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPB65R075CFD7A
RevisionꢀHistory
IPB65R075CFD7A
Revision:ꢀ2021-11-23,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2021-06-15
2021-11-23
Change of wording regarding breakdown voltage / cosmic ray
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2021-11-23
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