IPC171N04N [INFINEON]
Metal Oxide Semiconductor Field Effect Transistor;
| 型号： | IPC171N04N |
| 厂家： | 
Infineon |
| 描述： | Metal Oxide Semiconductor Field Effect Transistor |
| 文件： | 总4页 (文件大小：1522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
BareꢀDie
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC171N04N
DataꢀSheet
Rev.ꢀ2.5
Final
Industrialꢀ&ꢀMultimarket
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC171N04N
PowerꢀMOSꢀTransistorꢀChip
1ꢀꢀꢀꢀꢀDescription
•ꢀN-channelꢀenhancementꢀmode
•ꢀForꢀdynamicꢀcharacterizationꢀreferꢀtoꢀtheꢀdatasheetꢀofꢀIPB021N04NꢀG
•ꢀAQLꢀ0.65ꢀforꢀvisualꢀinspectionꢀaccordingꢀtoꢀfailureꢀcatalogue
•ꢀElectrostaticꢀDischargeꢀSensitiveꢀDeviceꢀaccordingꢀtoꢀMIL-STDꢀ883C
•ꢀDieꢀbond:ꢀsolderedꢀorꢀglued
•ꢀBacksideꢀmetallization:ꢀNiVꢀsystem
•ꢀFrontsideꢀmetallization:ꢀAlSiꢀsystem
•ꢀPassivation:ꢀnitrideꢀ(onlyꢀonꢀedgeꢀstructure)
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Drain
V(BR)DSS
40
V
RDS(on)
2.11)
mΩ
mm2
µm
Gate
Die size
Thickness
5.9 x 2.95
205
Source
Typeꢀ/ꢀOrderingꢀCode
Package
Chip
Marking
RelatedꢀLinks
IPC171N04N
not defined
-
2ꢀꢀꢀꢀꢀElectricalꢀCharacteristicsꢀonꢀWaferꢀLevel
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀ
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
IDSS
40
V
VGS=0ꢀVꢀ,ID=1ꢀmA
VDS=VGS,ꢀID=150ꢀµA
VGS=0ꢀVꢀ,VDS=40ꢀV
VGS=20ꢀVꢀ,VDS=0ꢀV
2.1
3.0
4.0
1
V
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
-
-
-
-
0.1
µA
IGSS
1
1.12)
100
nA
RDS(on)
VSD
1003) mΩ VGS=10ꢀVꢀ,ID=2.0ꢀA
1.0
1.3 VGS=0ꢀVꢀ,IF=1A
V
1) packaged in a P-TO263-7 (see ref. product)
2)ꢀtypicalꢀbareꢀdieꢀRDS(on);ꢀVGS=10ꢀVꢀwhenꢀusedꢀwithꢀ4x500µmꢀAl-wedgeꢀbonding
3) limited by wafer test-equipment
Final Data Sheet
2
Rev.ꢀ2.5,ꢀꢀ2014-06-21
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC171N04N
3ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀChip,ꢀdimensionsꢀinꢀµm
Final Data Sheet
3
Rev.ꢀ2.5,ꢀꢀ2014-06-21
OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC171N04N
RevisionꢀHistory
IPC171N04N
Revision:ꢀ2014-06-21,ꢀRev.ꢀ2.5
Previous Revision
Revision Date
2.5
Subjects (major changes since last revision)
Release of Final Version
2014-06-21
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
4
Rev.ꢀ2.5,ꢀꢀ2014-06-21
相关型号：
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