IPC60N04S4L-06_15 [INFINEON]
N-channel Logic Level - Enhancement mode;
| 型号： | IPC60N04S4L-06_15 |
| 厂家： | 
Infineon |
| 描述： | N-channel Logic Level - Enhancement mode |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPC60N04S4L-06
OptiMOSTM-T2 Power-Transistor
Product Summary
VDS
RDS(on)
ID
40
5.6
60
V
m
A
Features
• N-channel Logic Level - Enhancement mode
PG-TDSON-8-23
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
1
1
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
IPC60N04S4L-06
PG-TDSON-8-23
4N04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
T J =175°C,
GS=10V
601)
I D
Continuous drain current
A
V
T C=100 °C,
T J =175°C,
581, 2)
V
GS=10 V
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
240
120
60
I D=30 A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
VGS
-
±16
V
T C=25 °C,
T J =175°C
Ptot
Power dissipation
63
W
-55 ... +1753)
T j, T stg
Operating and storage temperature
-
°C
Rev. 1.0
page 1
2015-05-22
IPC60N04S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
2.4
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D= 1 mA
VGS(th) VDS=VGS, I D= 30µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.7
2.2
VDS=40 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
V
DS=18 V, VGS=0 V,
20
T j=85 °C2)
I GSS
VGS=16 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=10 V, I D= 30A
Drain-source on-state resistance
4.8
6.5
5.6
7.9
m
V
GS=4.5 V, I D=30 A
Rev. 1.0
page 2
2015-05-22
IPC60N04S4L-06
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
2763
514
23
4
3600 pF
670
V
GS=0 V, VDS=25 V,
f =1 MHz
54
-
-
-
-
ns
5
V
DD=20 V, VGS=10 V,
I D=60 A, R G=3.5
t d(off)
t f
Turn-off delay time
Fall time
15
15
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
9
4
12
9
nC
Q gd
VDD=32 V, I D=60 A,
GS=0 to 10 V
V
Q g
35
3.2
46
-
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
60
T C=25 °C
I S,pulse
240
VGS=0 V, I F=30 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
37
33
-
-
ns
VR=20 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by package; with an R thJC = 2.4 K/W the chip is able to carry 81 A at 25°C.
2) Defined by design. Not subject to production test.
3) T J > 150°C is limited to 200h operation time over life time of the device
Rev. 1.0
page 3
2015-05-22
IPC60N04S4L-06
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
70
60
50
40
30
20
10
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
0.5
100
10 µs
100 µs
0.1
150 µs
0.05
10-1
0.01
single pulse
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2015-05-22
IPC60N04S4L-06
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
40
240
10 V
6 V
3 V
3.5 V
5 V
200
30
20
10
0
4.5 V
160
120
80
40
0
4 V
4 V
3.5 V
4.5 V
5 V
10 V
3 V
0
20
40
60
0
1
2
3
4
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
240
200
160
120
80
11
9
175 °C
-55 °C
25 °C
4.5 V
10 V
7
5
40
3
0
-60
-20
20
60
100
140
180
1
2
3
4
5
6
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2015-05-22
IPC60N04S4L-06
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
104
103
102
101
2
1.75
1.5
Ciss
300 µA
30 µA
Coss
1.25
1
0.75
0.5
Crss
0.25
0
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
102
150 °C
10
175 °C
25 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2015-05-22
IPC60N04S4L-06
13 Typical avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
E
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
52
250
15 A
48
44
40
36
32
200
150
30 A
100
50
0
60 A
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 60 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
VGS
8 V
Qg
32 V
Qgate
Qgd
Qgs
0
0
20
40
Qgate [nC]
Rev. 1.0
page 7
2015-05-22
IPC60N04S4L-06
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2015-05-22
IPC60N04S4L-06
Revision History
Version
Date
Changes
2015-05-22 Final Data Sheet
Revision 1.0
Rev. 1.0
page 9
2015-05-22
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