IPD034N06N3G [INFINEON]
OptiMOS(TM)3 Power-Transistor; 的OptiMOS ( TM ) 3功率三极管型号: | IPD034N06N3G |
厂家: | Infineon |
描述: | OptiMOS(TM)3 Power-Transistor |
文件: | 总9页 (文件大小:209K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IPD034N06N3GATMA1
Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD035N06L3G
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD036N04L G
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机。此外,这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD036N04LG
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD036N04LGATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD036N04LGBTMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N04NG
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N04NGBTMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N06N3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机以及平板电脑充电器中的电源。此外,这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N06N3G
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N06N3GATMA1
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD038N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 3.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD03N03LA
Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD03N03LAG
OptiMOS㈢2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD03N03LB
OptiMOS 2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD03N03LBG
OptiMOS 2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD040N03LG
OptiMOS®3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD040N03LGATMA1
Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD040N03LG_10
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD040N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD040N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
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