IPD040N08NF2S [INFINEON]
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD040N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.;
| 型号： | IPD040N08NF2S |
| 厂家： | 
Infineon |
| 描述： | Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD040N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement. 光电二极管 |
| 文件： | 总11页 (文件大小：1105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD040N08NF2S
MOSFET
StrongIRFETTMꢀ2ꢀPower-Transistor
DPAK
tab
Features
•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications
•ꢀN-Channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
1
3
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
VDS
80
V
RDS(on),max
ID
4.0
129
65
mΩ
A
Source
Pin 3
Qoss
nC
nC
QG
54
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD040N08NF2S
PG-TO252-3
040N08NS
-
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
129
98
82
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=6ꢀV,ꢀTC=100ꢀ°C
20
VGS=10V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
516
112
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
150
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.0
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
50
75
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
80
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=85ꢀµA
2.2
3.0
3.8
-
-
0.1
10
1
100
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
3.4
4.4
4.0
5.7
VGS=10ꢀV,ꢀID=70ꢀA
VGS=6ꢀV,ꢀID=35ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
1.9
-
-
-
Ω
-
60
S
|VDS|≥2|ID|RDS(on)max,ꢀID=70ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
3800
620
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
29
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=70ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
14
54
28
13
-
-
-
-
ns
ns
ns
ns
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=70ꢀA,
RG,ext=1.6ꢀΩ
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=70ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=70ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
18.3
11.4
11.8
18.7
54
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=70ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=40ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-
-
Qsw
-
Qg
81
-
Vplateau
Qoss
4.8
65
-
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
103
516
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.92
33
V
VGS=0ꢀV,ꢀIF=70ꢀA,ꢀTj=25ꢀ°C
VR=40ꢀV,ꢀIF=70ꢀA,ꢀdiF/dt=500ꢀA/µs
VR=40ꢀV,ꢀIF=70ꢀA,ꢀdiF/dt=500ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
189
-
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
140
140
120
100
80
120
100
80
60
40
20
0
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
1 ms
100
100 µs
10-1
10-2
10-3
DC
10 ms
100
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
600
12
10 V
8 V
500
400
300
200
100
0
10
7 V
4.5 V
8
5 V
6 V
6
7 V
6 V
4
2
0
8 V
10 V
5 V
4.5 V
0
1
2
3
4
5
0
50
100
150
200
250
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
500
12
10
8
400
300
200
100
0
175 °C
6
4
2
0
25 °C
175 °C
25 °C
0
1
2
3
4
5
6
7
0
3
6
9
12
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=70ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
4.0
3.5
3.0
2.5
1.6
1.2
0.8
0.4
0.0
850 µA
85 µA
2.0
1.5
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=70ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
40
50
60
70
80
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
16 V
40 V
64 V
8
6
4
2
0
102
25 °C
101
100 °C
150 °C
100
10-1
10-1
100
101
102
103
0
10
20
30
40
50
60
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=70ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
88
86
84
82
80
78
76
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO252-3-U01
MILLIMETERS
DIMENSIONS
MIN.
2.18
0.00
0.64
0.76
0.46
0.40
5.97
5.21
6.35
4.32
MAX.
2.39
0.13
0.89
1.14
0.61
0.89
6.22
---
A
A1
b
b1
c
c1
D
D1
E
6.73
---
E1
e
2.29
4.58
3
e1
N
H
9.40
1.40
0.89
0.50
10.41
1.78
1.27
1.02
L
L1
L2
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO252-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2022-10-10
StrongIRFETTMꢀ2ꢀPower-Transistor
IPD040N08NF2S
RevisionꢀHistory
IPD040N08NF2S
Revision:ꢀ2022-10-10,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
Update Diagram 15
2022-02-08
2022-06-22
2022-10-10
Update package outline drawing
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2022-10-10
相关型号：
IPD042P03L3 G
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
INFINEON
IPD042P03L3GATMA1
Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD042P03L3GXT
Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD046N08N5
OptiMOS™ 5 80V 英飞凌新一代功率MOSFET，它针对通信和服务器电源中的同步整流而设计。此外，这些器件还可以在其他工业应用中使用，例如太阳能、低压驱动器和适配器。OptiMOS™ 5 80V MOSFET 采用八个种不同封装，提供了行业内较低 R DS(on)。
INFINEON
IPD048N06L3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
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