IPD230N06NG_08 [INFINEON]
OptiMOS® Power-Transistor Features For dc/dc converters and sync. rectification; OptiMOS®电源晶体管特性对于DC / DC转换器和同步。纠正
| 型号： | IPD230N06NG_08 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS® Power-Transistor Features For dc/dc converters and sync. rectification |
| 文件： | 总9页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD230N06N G
OptiMOS® Power-Transistor
Product Summary
Features
VDS
60
23
30
V
• For dc/dc converters and sync. rectification
• N-channel enhancement - normal level
R DS(on),max
I D
mΩ
A
• 175 °C operating temperature
• Pb-free lead plating, RoHS compliant
• Avalanche rated
IPD230N06N G
Type
PG-TO252-3
230N06N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
TC=25 °C1)
I D
Continuous drain current
30
30
A
T C=100 °C
T C=25 °C2)
I D,pulse
Pulsed drain current
120
150
EAS
I D=30 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=30 A, VDS=48 V,
di/dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
VGS
Gate source voltage
±20
V
Ptot
T C=25 °C
Power dissipation
100
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) Current is limited by bondwire;with an RthJC=1.5 K/W the chip is able to carry 43 A.
2) See figure 3
Rev. 1.2
page 1
2008-09-01
IPD230N06N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
1.5
75
50
K/W
R thJA
minimal footprint
-
-
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D=1 mA
DS=VGS, I D=50 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
2.1
3
4
V
DS=60 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=60 V, VGS=0 V,
100
T j=125 °C
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=30 A
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on)
R G
18
1.6
23
-
mΩ
Ω
|VDS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
17
34
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.2
page 2
2008-09-01
IPD230N06N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
860
240
64
1100 pF
320
V
GS=0 V, VDS=30 V,
C oss
C rss
t d(on)
t r
f =1 MHz
96
10
15
37
39
36
ns
25
V
DD=30 V, VGS=10 V,
I D=30 A, R G=12 Ω
t d(off)
t f
Turn-off delay time
Fall time
26
24
Gate Charge Characteristics4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
5
6
3
nC
Q g(th)
Q gd
2.6
9.7
12
23
5.5
9
14.6
17
31
-
V
V
DD=30 V, I D=30 A,
GS=0 to 10 V
Q sw
Q g
Gate charge total
Vplateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=30 V, VGS=10 V
11
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
30
A
V
T C=25 °C
I S,pulse
120
V
GS=0 V, I F=30 A,
VSD
Diode forward voltage
-
0.91
1.3
T j=25 °C
t rr
Reverse recovery time
-
-
39
48
48
60
ns
VR=30 V, I F=I S,
diF/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2008-09-01
IPD230N06N G
1 Power dissipation
2 Drain current
Ptot=f(T C)
I D=f(T C); VGS≥10 V
120
100
80
60
40
20
0
30
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
101
limited by on-state
resistance
1 µs
102
101
100
10-1
10 µs
100 µs
100
0.5
0.2
0.1
1 ms
DC
10 ms
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t
p [s]
Rev. 1.2
page 4
2008-09-01
IPD230N06N G
5 Typ. output characteristics
I D=f(VDS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: VGS
parameter: VGS
60
80
10 V
7 V
70
6.5 V
50
5 V
60
50
40
30
20
10
0
5.5 V
40
30
20
10
6 V
6 V
z
6.5 V
5.5 V
7 V
10 V
5 V
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
30
20
10
50
45
40
35
30
25
20
15
10
5
175 °C
25 °C
0
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
60
V
GS [V]
I
D [A]
Rev. 1.2
page 5
2008-09-01
IPD230N06N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); VGS=VDS
R
DS(on)=f(T j); I D=30 A; VGS=10 V
V
parameter: I D
70
60
50
40
4
3.5
3
490µA
49 µA
2.5
2
30
98 %
1.5
1
typ
20
10
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(VSD
C =f(VDS); VGS=0 V; f =1 MHz
)
parameter: T j
104
103
102
101
100
175 °C 98%
Ciss
103
102
101
25 °C
175 °C
Coss
Crss
25 °C 98%
10-1
0
0
10
20
30
40
50
0.5
1
1.5
V SD [V]
2
2.5
V
DS [V]
Rev. 1.2
page 6
2008-09-01
IPD230N06N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: VDD
102
12
30 V
48 V
12V
10
8
25 °C
100 °C
6
101
150 °C
4
2
0
0
5
10
15
Q gate [nC]
20
25
30
100
100
101
102
103
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
75
V GS
Q g
70
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.2
page 7
2008-09-01
IPD230N06N G
PG-TO252-3: Outline
Rev. 1.2
page 8
2008-09-01
IPD230N06N G
Rev. 1.2
page 9
2008-09-01
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