IPD50N06S4L-12 [INFINEON]
OptiMOS-T2 Power-Transistor; 的OptiMOS -T2功率三极管![IPD50N06S4L-12](http://pdffile.icpdf.com/pdf1/p00130/img/icpdf/IPD50_715841_icpdf.jpg)
型号: | IPD50N06S4L-12 |
厂家: | ![]() |
描述: | OptiMOS-T2 Power-Transistor |
文件: | 总9页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPD50N06S4L-12
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
60
12
50
V
R DS(on),max
I D
mΩ
A
Features
• N-channel - Enhancement mode
PG-TO252-3-11
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD50N06S4L-12
PG-TO252-3-11 4N06L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, VGS=10V
Continuous drain current
50
A
T C=100°C, VGS=10V2)
36
Pulsed drain current1)
I D,pulse
EAS
I AS
T C=25°C
200
33
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=25A
mJ
A
-
50
VGS
Ptot
-
±16
V
T C=25°C
Power dissipation
50
W
°C
−
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2009-03-23
IPD50N06S4L-12
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
3.0
62
40
K/W
minimal footprint
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0V, I D= 1mA
DS=VGS, I D=20µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
1.2
1.7
2.2
V
DS=60V, VGS=0V,
I DSS
Zero gate voltage drain current
-
-
0.01
5
1
µA
T j=25°C
V
DS=60V, VGS=0V,
100
T j=125°C2)
I GSS
V
V
V
GS=16V, VDS=0V
GS=4.5V, I D=25A
GS=10V, I D=50A
Gate-source leakage current
-
-
-
-
100 nA
R DS(on)
Drain-source on-state resistance
14.6
9.6
21.6
12.0
mΩ
Rev. 1.0
page 2
2009-03-23
IPD50N06S4L-12
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
2220
540
27
6
2890 pF
700
V
GS=0V, VDS=25V,
f =1MHz
54
-
-
-
-
ns
2
V
DD=30V, VGS=10V,
I D=50A, R G=3.5Ω
t d(off)
t f
Turn-off delay time
Fall time
25
5
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
9
3
12
6
nC
Q gd
V
V
DD=48V, I D=50A,
GS=0 to 10V
Q g
30
4.0
40
-
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
50
T C=25°C
I S,pulse
200
V
GS=0V, I F=50A,
VSD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
0.6
0.95
20
1.3
V
T j=25°C
VR=30V, I F=I S,
diF/dt =100A/µs
t rr
-
-
-
-
ns
nC
Q rr
19
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-23
IPD50N06S4L-12
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
0.5
100
1 µs
0.1
10 µs
0.05
100 µs
10-1
0.01
1 ms
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t
p [s]
V
DS [V]
Rev. 1.0
page 4
2009-03-23
IPD50N06S4L-12
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
200
30
10 V
5 V
4.5 V
6 V
4 V
26
22
18
14
10
160
120
80
40
0
5 V
4.5 V
4 V
6 V
10 V
6
0
0
1
2
3
4
5
6
40
80
120
160
200
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 50 A; VGS = 10 V
200
160
120
80
20
18
16
14
12
10
8
-55 °C
25 °C
175 °C
40
0
6
0
1
2
3
4
5
6
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2009-03-23
IPD50N06S4L-12
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
2.5
104
103
102
2
1.5
1
Ciss
200 µA
20 µA
Coss
0.5
Crss
101
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
A S= f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
102
101
100
25 °C
100 °C
10
1
150 °C
25 °C
175 °C
100
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
V
SD [V]
t
AV [µs]
Rev. 1.0
page 6
2009-03-23
IPD50N06S4L-12
13 Avalanche energy
14 Drain-source breakdown voltage
E
AS = f(T j); I D = 25 A
V
BR(DSS) = f(T j); I D = 1 mA
66
40
64
62
60
58
56
30
20
10
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 50 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Q g
12 V
48 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
5
10
15
20
25
30
35
Q
gate [nC]
Rev. 1.0
page 7
2009-03-23
IPD50N06S4L-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2009-03-23
IPD50N06S4L-12
Revision History
Version
Date
Changes
Revision 1.0
23.03.2009 Final data sheet
Rev. 1.0
page 9
2009-03-23
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