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IPD65R225C7ATMA1 [INFINEON]

Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2;
IPD65R225C7ATMA1
型号： IPD65R225C7ATMA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2

开关 脉冲 晶体管
文件： 总15页 (文件大小：1860K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀC7  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
DPAK  
1ꢀꢀꢀꢀꢀDescription  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
tab  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ  
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio  
providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering  
betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand  
outstandingꢀreliability.  
2
1
3
Features  
Drain  
Pin 2, tab  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg  
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package  
•ꢀEasyꢀtoꢀuse/drive  
Gate  
Pin 1  
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Source  
Pin 3  
Benefits  
•ꢀEnablingꢀhigherꢀsystemꢀefficiency  
•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements  
•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures  
Applications  
PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,  
Telecom,ꢀUPSꢀandꢀSolar.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
700  
225  
20  
Unit  
V
mΩ  
nC  
A
ID,pulse  
41  
Eoss@400V  
Body diode di/dt  
2.3  
µJ  
55  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
see Appendix A  
IPD65R225C7  
PG-TO 252  
65C7225  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
11  
7
TC=25°C  
TC=100°C  
Continuous drain current 1)  
ID  
A
Pulsed drain current 2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
41  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
48  
mJ  
mJ  
A
ID=4.8A; VDD=50V  
ID=4.8A; VDD=50V  
-
-
0.24  
4.8  
100  
20  
-
dv/dt  
VGS  
VGS  
Ptot  
-
V/ns VDS=0...400V  
-20  
V
static;  
-30  
30  
V
AC (f>1 Hz)  
-
63  
W
°C  
°C  
TC=25°C  
Storage temperature  
Tstg  
Tj  
-55  
150  
150  
-
-
-
Operating junction temperature  
Mounting torque  
-55  
-
-
-
-
-
-
-
Ncm -  
Continuous diode forward current  
Diode pulse current2)  
Reverse diode dv/dt 3)  
IS  
11  
A
A
TC=25°C  
TC=25°C  
IS,pulse  
dv/dt  
dif/dt  
VISO  
41  
1
V/ns VDS=0...400V,ꢀISD<=IS,ꢀTj=25°C  
A/µs VDS=0...400V,ꢀISD<=IS,ꢀTj=25°C  
Maximum diode commutation speed  
Insulation withstand voltage  
55  
n.a.  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
1.99  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper  
area for drain connection and  
cooling. PCB is vertical without air  
stream cooling.  
RthJA  
-
-
35  
-
45  
°C/W  
Soldering temperature, wave- & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL1  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3
Typ.  
-
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.24mA  
-
-
-
10  
1
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C  
VDS=650,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.199 0.225  
0.478  
VGS=10V,ꢀID=4.8A,ꢀTj=25°C  
VGS=10V,ꢀID=4.8A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1.2  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
996  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
14  
Effective output capacitance, energy  
related 1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
29  
313  
9
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time related  
2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,  
RG=10Ω  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,  
RG=10Ω  
6
VDD=400V,ꢀVGS=13V,ꢀID=4.8A,  
RG=10Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
48  
10  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=4.8A,  
RG=10Ω  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
5
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.8A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
6
Qg  
20  
Gate plateau voltage  
Vplateau  
5.4  
ꢀ1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
ꢀ2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
0.9  
890  
6
Max.  
Diode forward voltage  
VSD  
trr  
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=4.8A,ꢀTj=25°C  
Reverse recovery time  
ns  
µC  
A
VR=400V,ꢀIF=11A,ꢀdiF/dt=55A/µs  
VR=400V,ꢀIF=11A,ꢀdiF/dt=55A/µs  
VR=400V,ꢀIF=11A,ꢀdiF/dt=55A/µs  
Reverse recovery charge  
Peak reverse recovery current  
Qrr  
Irrm  
16  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Tableꢀ8  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
70  
102  
1 µs  
10 µs  
100 µs  
1 ms  
60  
50  
40  
30  
20  
10  
0
10 ms  
101  
100  
DC  
10-1  
10-2  
10-3  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Tableꢀ9  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
10 µs  
1 µs  
100 µs  
1 ms  
10 ms  
101  
100  
DC  
0.5  
100  
0.2  
0.1  
10-1  
10-2  
10-3  
0.05  
0.02  
0.01  
10-1  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
Tableꢀ10  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
50  
30  
45  
40  
35  
30  
25  
20  
15  
10  
5
20 V  
20 V  
10 V  
25  
20  
15  
10  
5
10 V  
7 V  
8 V  
8 V  
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Tableꢀ11  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.9  
0.6  
6 V  
5.5 V  
20 V  
10 V  
7 V  
6.5 V  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.5  
0.4  
0.3  
0.2  
0.1  
98%  
typ  
0
10  
20  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=4.8ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
Tableꢀ12  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
45  
12  
11  
120 V  
400 V  
40  
35  
30  
25  
20  
15  
10  
5
25 °C  
10  
9
8
7
6
5
4
3
2
1
0
150 °C  
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=4.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Tableꢀ13  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
101  
125 °C  
25 °C  
100  
10-1  
0
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.8ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
Tableꢀ14  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
760  
104  
740  
720  
700  
680  
660  
640  
620  
600  
580  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
-60  
-20  
20  
60  
100  
140  
180  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Tableꢀ15  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ16ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ17ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ18ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VD  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ19ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPD65R225C7  
RevisionꢀHistory  
IPD65R225C7  
Revision:ꢀ2013-04-18,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2013-04-18  
WeꢀListenꢀtoꢀYourꢀComments  
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Editionꢀ2011-08-01  
Publishedꢀby  
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81726ꢀMünchen,ꢀGermany  
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
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Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2013-04-18  

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