IPD65R250C6 [INFINEON]
Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3;
| 型号： | IPD65R250C6 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：1238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 650V
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Data Sheet
Rev. 2.1
Final
Industrial & Multimarket
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
DPAK
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
drain
pin 2
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
• Qualified for industrial grade applications according to JEDEC (J-STD20
and JESD22)
gate
pin 1
source
pin 3
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom, UPS and Solar.
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.25
44
Unit
V
Â
nC
A
ID,pulse
46
Eoss @ 400V
Body diode di/dt
3.8
µJ
A/µs
500
Type / Ordering Code
IPD65R250C6
Package
Marking
Related Links
PG-TO 252
65C6250
see Appendix A
Final Data Sheet
Rev. 2.1, 2011-09-15
2
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
Rev. 2.1, 2011-09-15
3
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
16.1
Continuous drain current1)
I ‡
A
A
T† = 25°C
T† = 100°C
T† = 25°C
11.3
46
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
290
mJ I‡ = 2.4A, V‡‡ = 50V
Eƒ¸
0.44 mJ I‡ = 2.4A, V‡‡ = 50V
I ƒ¸
2.4
50
20
30
A
dv/dt
V•»
V/ns V‡» = 0 ... 480V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
PÚÓÚ
208.3 W
T† = 25°C
Operating and storage temperature
Continuous diode forward current
Diode pulse current
T΂TÙÚÃ
I »
-55
150
17.9
46
°C
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt3)
15
V/ns
A/µs
V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C
Maximum diode commutation speed
500
1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.75
2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low and high side switch with same Rg
Final Data Sheet
Rev. 2.1, 2011-09-15
4
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
3
Thermal characteristics
Table 3 Thermal characteristics DPAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
0.6
Thermal resistance, junction - case
RÚÌœ†
RÚÌœƒ
°C/W
°C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1)
62
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
TÙÓÐÁ
260
°C
reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.1, 2011-09-15
5
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 4 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»» 650
V
V•» = 0V, I‡ = 1mA
V•»ñÚÌò
I ‡»»
2.5
3
3.5
1
V
V‡» = V•», I‡ = 0.4mA
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V, TÎ = 25°C
V‡» = 650V, V•» = 0V,
TÎ = 150°C
10
Gate-source leakage current
I •»»
100
nA
Â
V•» = 20V, V‡» = 20V
Drain-source on-state resistance
R‡»ñÓÒò
0.230 0.25
0.590
V•» = 10V, I‡ = 4.4A, TÎ = 25°C
V•» = 10V, I‡ = 4.4A, TÎ = 150°C
f = 1MHz, open drain
Gate resistance
R•
12.5
Â
Table 5 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
950
60
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
40
pF
pF
V•» = 0V, V‡» = 0 ... 480V
I‡ = constant, V•» = 0V,
V‡» = 0 ... 480V
Effective output capacitance, time related2) CÓñÚØò
183
Turn-on delay time
Rise time
tÁñÓÒò
tØ
13
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I‡ = 6.6A, R• = 3.4Â
11
Turn-off delay time
Fall time
tÁñÓËËò
tË
100
12
Table 6 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
5
nC
nC
nC
V
V‡‡ = 480V, I‡ = 6.6A,
V•» = 0 to 10V
QÃÁ
23
44
5.5
QÃ
Gate plateau voltage
VÔÐÈÚþÈÛ
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»
Final Data Sheet
Rev. 2.1, 2011-09-15
6
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Table 7 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
0.9
Diode forward voltage
V»‡
tØØ
V
V•» = 0V, IŒ = 6.6A, TÎ = 25°C
Reverse recovery time
290
2.9
19
ns
µC
A
V¸ = 400V, IŒ = 6.6A,
diŒ/dt = 100A/µs
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
Final Data Sheet
Rev. 2.1, 2011-09-15
7
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
5
Electrical characteristics diagrams
Table 8
Power dissipation
Safe operating area
250
102
1 µs
200
150
10 µs
101
100 µs
1 ms
100
I
I
I
I
10 ms
DC
P
P
P
P
100
50
0
10-1
10-2
0
40
80
TC [°C]
120
160
100
101
102
103
VDS [V]
Ptot=f(TC)
ID=f(VDS); TC=25 °C; VGS>7V; D=0; parameter: tp
Table 9
Safe operating area
Max. transient thermal impedance
102
101
0.5
0.2
0.1
1 µs
101
0.05
10 µs
100
0.02
0.01
100 µs
1 ms
single pulse
100
I
I
I
I
Z
Z
Z
Z
10 ms
DC
10-1
10-1
10-2
10-2
100
101
102
103
10-5
10-4
10-3
tp [s]
10-2
10-1
VDS [V]
ID=f(VDS); TC=80 °C;VGS>7V D=0; parameter: tp
Final Data Sheet
ZthJC =f(tP); parameter: D=tp/T
Rev. 2.1, 2011-09-15
8
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Table 10
Typ. output characteristics
Typ. output characteristics
60
35
20 V
20 V
10 V
10 V
30
50
8 V
8 V
7 V
7 V
25
40
30
20
10
0
6 V
5.5 V
5 V
6 V
5.5 V
20
5 V
I
I
I
I
II
II
4.5 V
4.5 V
15
10
5
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.70
0.90
0.80
0.70
0.60
0.60
0.50
98%
typ
0.40
0.30
0.20
0.10
0.00
R
R
R
R
RR
RR
7 V
10 V
5 V 5.5 V
6 V 6.5 V
0.50
0.40
0.30
0
5
10
ID [A]
15
20
-60
-20
20
60
Tj [°C]
100
140
180
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=4.4 A; VGS=10 V
Final Data Sheet
Rev. 2.1, 2011-09-15
9
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Table 12
Typ. transfer characteristics
Typ. gate charge
50
10
25 °C
45
40
35
30
25
9
120 V
480 V
8
7
6
5
4
3
2
1
0
150 °C
I
I
I
I
V
V
V
V
20
15
10
5
0
0
2
4
6
8
10
0
10
20
30
Qgate [nC]
40
50
VGS [V]
ID=f(VGS); |VDS|>2|ID|RDS(on)max; parameter: Tj
VGS=f(Qgate); ID=6.6 A pulsed; parameter: VDD
Table 13
Forward characteristics of reverse diode
Avalanche energy
102
350
300
250
200
125 °C
25 °C
101
I
I
I
I
E
E
E
E
150
100
50
100
10-1
0
0.0
0.5
1.0
1.5
0
50
100
Tj [°C]
150
200
VSD [V]
IF=f(VSD); parameter: Tj
EAS=f(Tj); ID=2.4 A; VDD=50 V
Final Data Sheet
Rev. 2.1, 2011-09-15
10
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Table 14
Drain-source breakdown voltage
Typ. capacitances
760
104
740
720
700
680
660
640
Ciss
103
102
C
C
C
C
V
V
V
V
Coss
Crss
620
600
580
560
540
101
100
-60
-20
20
60
Tj [°C]
100
140
180
0
100
200
300
VDS [V]
400
500
600
VBR(DSS)=f(Tj); ID=1 mA
C=f(VDS); VGS=0 V; f=1 MHz
Table 15
Typ. Coss stored energy
8
7
6
5
4
E
E
E
E
3
2
1
0
0
100
200
300
VDS [V]
400
500
600
Eoss=f(VDS
)
Final Data Sheet
Rev. 2.1, 2011-09-15
11
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
6
Test Circuits
Table 16 Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 17 Switching_times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 18 Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.1, 2011-09-15
12
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
7
Package Outlines
Figure 1 Outline PG-TO 252, dimensions in mm/inches
Final Data Sheet
Rev. 2.1, 2011-09-15
13
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
8
Appendix A
Table 19 Related Links
IFX C6 Product Brief:
•
http://www.infineon.com/dgdl/Product+Brief+600V+CoolMOS+C6+.pdf?folderId=db3a3043156fd5730115939eb6b506db
IFX C6 Portfolio:
•
•
•
http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=ip*c6
IFX CoolMOS Webpage:
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
IFX Design Tools:
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
Final Data Sheet
Rev. 2.1, 2011-09-15
14
650V CoolMOS™ C6 Power Transistor
IPD65R250C6
Revision History
IPD65R250C6
Revision: 2011-09-15, Rev. 2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Final Datasheet Release
2011-09-15
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to
continuously improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Edition 2011-08-01
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
).
www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,
if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.1, 2011-09-15
15
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