IPDD60R105CFD7 [INFINEON]

600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术，补全了 CoolMOS™ 7 系列。该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外，其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多，且具有市场上最短的反向恢复时间(trr)。;


型号：	IPDD60R105CFD7
厂家：	Infineon
描述：	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术，补全了 CoolMOS™ 7 系列。该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外，其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多，且具有市场上最短的反向恢复时间(trr)。栅高压二极管栅极
文件：	总14页 (文件大小：1039K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPDD60R105CFD7

MOSFET

PG-HDSOP-10-1

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe

successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform

tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge

(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Q_g),ꢀbest-in-class

reverseꢀrecoveryꢀchargeꢀ(Q_rr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™

CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s

fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof

aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation

robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in

process.

tab

Pin 1

Drain

Pin 6-10, tab

Features

Gate

Pin 1

•ꢀUltra-fastꢀbodyꢀdiode

•ꢀLowꢀgateꢀcharge

Driver

Source

Pin 2

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdi_F/dtꢀruggedness

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Power

Source

Pin 3,4,5

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies

•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

Potentialꢀapplications

SuitableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET

devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe

onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

105

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

4.1

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPDD60R105CFD7

PG-HDSOP-10

60R105F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min. Typ. Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

mJ I_D=4.4A; V_DD=50V; see table 10

0.39 mJ I_D=4.4A; V_DD=50V; see table 10

4.4

120

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

198

150

n.a.

°C

Ncm

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Continuous diode forward current¹⁾

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

V_DS=0...400V,ꢀI_SD<=18A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Reverse diode dv/dt³⁾

dv/dt

V/ns

V_DS=0...400V,ꢀI_SD<=18A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.63

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

°C/W layer, 70µm thickness) copper area.

Tap exposed to air. PCB is vertical

without air stream cooling.

Thermal resistance, junction - ambient

for SMD version

R_thJA

Soldering temperature, reflow soldering

allowed

T_sold

260

°C

reflow MSL1

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.5

V_DS=V_GS,ꢀI_D=0.39mA

V_DS=600V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600V,ꢀV_GS=0V,ꢀT_j=125°C

Zero gate voltage drain current¹⁾

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.088 0.105

0.199

V_GS=10V,ꢀI_D=7.8A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=7.8A,ꢀT_j=150°C

R_DS(on)

R_G

8.8

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

1504

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related²⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

519

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related³⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=10V,ꢀI_D=8.7A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=10V,ꢀI_D=8.7A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=10V,ꢀI_D=8.7A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=10V,ꢀI_D=8.7A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=8.7A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.7

¹⁾Maximum specification is defined by calculated six sigma upper confidence bound

²⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

³⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=7.8A,ꢀT_j=25°C

V_R=400V,ꢀI_F=8.7A,ꢀdi_F/dt=100A/µs;

see table 8

147

0.82

V_R=400V,ꢀI_F=8.7A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

0.41

7.3

µC

V_R=400V,ꢀI_F=8.7A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

250

10²

1 µs

10 µs

200

150

100

10¹

10⁰

100 µs

1 ms

10^-1

10^-2

10^-3

10 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10²

10⁰

1 µs

10 µs

10¹

10⁰

0.5

0.2

100 µs

10^-1

0.1

1 ms

0.05

0.02

10^-1

10^-2

10^-3

0.01

single pulse

10 ms

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

125

20 V

10 V

20 V

10 V

8 V

7 V

100

8 V

7 V

6 V

5.5 V

6 V

5 V

5.5 V

4.5 V5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.350

2.5

6.5 V

6 V

5.5 V

7 V

0.300

0.250

0.200

0.150

2.0

1.5

1.0

0.5

10 V

20 V

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=7.8ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

125

120 V

400 V

100

25 °C

150 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=8.7ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10²

10¹

125 °C

25 °C

10⁰

10^-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=4.4ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

690

10⁵

10⁴

660

630

600

570

540

Ciss

10³

10²

10¹

10⁰

10^-1

Coss

Crss

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

500

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600VꢀCoolMOS™ꢀCFD7ꢀPowerꢀTransistor

IPDD60R105CFD7

6ꢀꢀꢀꢀꢀPackageꢀOutlines

PG-HDSOP-10-1

DOCUMENT NO.

Z8B00184263

REVISION

MILLIMETERS

DIMENSIONS

MIN.

2.20

0.00

0.89

0.57

0.46

15.20

10.50

6.40

5.20

MAX.

2.35

0.15

1.10

0.63

0.93

0.58

15.60

10.70

6.60

5.50

SCALE 5:1

5mm

EUROPEAN PROJECTION

1.14

ISSUE DATE

06.02.2017

20.81

1.20

21.11

1.40

Figure 1 Outline PG-HDSOP-10, dimensions in mm/inches

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-09-16

600V CoolMOS™ CFD7 Power Transistor

IPDD60R105CFD7

Appendix A

Table 11 Related Links

• IFX CoolMOS CFD7 Webpage: www.infineon.com

• IFX CoolMOS CFD7 application note: www.infineon.com

• IFX CoolMOS CFD7 simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

Final Data Sheet

Rev. 2.0, 2020-09-16

600V CoolMOS™ CFD7 Power Transistor

IPDD60R105CFD7

Revision History

IPDD60R105CFD7

Revision: 2020-09-16, Rev. 2.0

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2020-09-16

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Final Data Sheet

Rev. 2.0, 2020-09-16

IPDD60R105CFD7 [INFINEON]

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