IPG20N04S4-08A [INFINEON]
Power Field-Effect Transistor;
| 型号： | IPG20N04S4-08A |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor 晶体 晶体管 功率场效应晶体管 脉冲 光电二极管 |
| 文件： | 总9页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPG20N04S4-08
OptiMOS™-T2 Power-Transistor
Product Summary
V DS
40
7.6
20
V
4)
mW
A
R DS(on),max
I D
Features
• Dual N-channel Normal Level - Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPG20N04S4-08
PG-TDSON-8-4 4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active
T C=25 °C, V GS=10 V1)
I D
20
20
80
A
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
one channel active
I D,pulse
-
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
E AS
I AS
I D=10A
230
15
mJ
A
-
V GS
-
±20
V
Power dissipation
one channel active
P tot
T C=25 °C
65
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2010-10-05
IPG20N04S4-08
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
2.3
K/W
minimal footprint
100
60
-
-
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D= 30µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.0
3.0
4.0
V DS=40 V, V GS=0 V,
T j=25 °C
Zero gate voltage drain current4)
I DSS
-
-
0.01
1
1
µA
V DS=18 V, V GS=0 V,
T j=85 °C2)
100
Gate-source leakage current4)
I GSS
V GS=20 V, V DS=0 V
-
-
-
100 nA
Drain-source on-state resistance4)
R DS(on) V GS=10 V, I D=17 A
7.0
7.6
mW
Rev. 1.0
page 2
2010-10-05
IPG20N04S4-08
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance4)
Output capacitance4)
Reverse transfer capacitance4)
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
2260
555
17
2940 pF
720
V GS=0 V, V DS=25 V,
f =1 MHz
39
15
-
-
-
-
ns
5
V DD=20 V, V GS=10 V,
I D=20 A, R G=11 W
t d(off)
t f
Turn-off delay time
Fall time
20
13
Gate Charge Characteristics2, 4)
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
12
4
15
9
nC
Q gd
V DD=32 V, I D=20 A,
V GS=0 to 10 V
Q g
Gate charge total
28
5.2
36
-
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
one channel active
I S
-
-
-
-
-
-
20
80
1.3
-
T C=25 °C
Diode pulse current2)
one channel active
I S,pulse
V SD
t rr
-
V GS=0 V, I F=17 A,
T j=25 °C
Diode forward voltage
0.9
36
34
V
V R=20 V, I F=I S,
di F/dt =100 A/µs
Reverse recovery time2)
Reverse recovery charge2, 4)
ns
nC
Q rr
-
1) Current is limited by bondwire; with an R thJC =2.3 K/W the chip is able to carry 71A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) Per channel
Rev. 1.0
page 3
2010-10-05
IPG20N04S4-08
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V; one channel active
I D = f(T C); V GS ≥ 6 V; one channel active
70
60
50
40
30
20
10
0
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D=f(V DS); T C=25°C; D =0; one channel active
parameter: t p
parameter: D =t p/T
101
100
1 µs
10 µs
100 µs
0.5
100
10
0.1
1 ms
0.05
10-1
1
0.01
single pulse
10-2
0.1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.0
page 4
2010-10-05
IPG20N04S4-08
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
80
45
10 V
6.5 V
6.25 V
5.5 V
5 V
6 V
6 V
60
40
20
0
35
25
15
5
5.5 V
5 V
6.5 V
10 V
0
2
4
6
8
0
20
40
60
80
V DS [V]
I D [A]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
80
60
40
12
10
8
20
6
175 °C
25 °C
-55 °C
0
4
3
4
5
6
7
-60
-20
20
60
100
140
180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2010-10-05
IPG20N04S4-08
10 Typ. Capacitances4)
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
4
3.5
3
104
103
102
101
Ciss
300µA
Coss
30µA
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis4)
IF = f(VSD
12 Avalanche characteristics4)
I A S= f(t AV
)
)
parameter: T j
parameter: Tj(start)
102
100
25 °C
100 °C
101
10
150 °C
25 °C
175 °C
100
0
1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V SD [V]
t AV [µs]
Rev. 1.0
page 6
2010-10-05
IPG20N04S4-08
13 Avalanche energy4)
14 Drain-source breakdown voltage
E AS = f(T j), I D = 10A
V BR(DSS) = f(T j); I D = 1 mA
44
43
42
41
40
39
38
37
250
200
150
100
50
0
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
T j [°C]
T j [°C]
15 Typ. gate charge4)
16 Gate charge waveforms
V GS = f(Q gate); I D = 20 A pulsed
parameter: V DD
12
10
8
V GS
Q g
8 V
32 V
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
5
10
15
20
25
30
Q gate [nC]
Rev. 1.0
page 7
2010-10-05
IPG20N04S4-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2010-10-05
IPG20N04S4-08
Revision History
Version
Date
Changes
Revision 1.0
05.10.2010
Data Sheet revision 1.0
Rev. 1.0
page 9
2010-10-05
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