IPI054NE8NG [INFINEON]
Power Field-Effect Transistor, 161A I(D), 85V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3;
| 型号： | IPI054NE8NG |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 161A I(D), 85V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
85
5.1
100
V
• N-channel, normal level
R DS(on),max
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB051NE8N G
IPI054NE8N G
IPP054NE8N G
Package
Marking
PG-TO263-3
051NE8N
PG-TO262-3
054NE8N
PG-TO220-3
054NE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
100
100
A
T C=100 °C
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
400
I D=100 A, R GS=25 Ω
Avalanche energy, single pulse
1000
mJ
I D=100 A, V DS=80 V,
di /dt =100 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
V GS
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 0.92
page 1
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
junction - ambient
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
85
2
-
-
V
DS=V GS, I D=250 µA
3
4
V
DS=85 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
10
1
µA
T j=25 °C
V
DS=85 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=100 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
4.1
5.4
5.1
-
mΩ
V
GS=10 V, I D=100 A,
-
-
3.8
1.8
SMD version
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=100 A
,
Transconductance
81
162
-
S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with anR thJC=0.5 K/W the chip is able to carry 161 A.
3) See figure 3
2
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.92
page 2
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
9220
2410
210
31
12300 pF
3210
V
GS=0 V, V DS=25 V,
C oss
C rss
t d(on)
t r
f =1 MHz
315
47
26
87
22
ns
17
V
DD=40 V, V GS=10 V,
I D=50 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
58
15
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
48
30
63
45
89
179
-
nC
V
Q gd
V
V
DD=40 V, I D=100 A,
Q sw
Q g
63
GS=0 to 10 V
Gate charge total
135
5.2
126
V plateau
Q oss
Gate plateau voltage
Output charge
V
DD=40 V, V GS=0 V
168 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
400
A
T C=25 °C
I S,pulse
V
GS=0 V, I F=100 A,
V SD
Diode forward voltage
-
1
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
110
360
ns
V R=40 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
-
nC
5) See figure 16 for gate charge parameter definition
Rev. 0.92
page 3
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
350
300
250
200
150
100
50
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
102
101
100
10-1
100
1 µs
10 µs
0.5
100 µs
0.2
10-1
0.1
1 ms
0.05
0.02
0.01
10 ms
single pulse
10-2
DC
10-3
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t
p [s]
Rev. 0.92
page 4
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
400
15
8 V
10 V
4.5 V
7 V
6.5 V
320
12
9
5 V
240
5.5 V
6 V
160
6
6 V
5.5 V
10 V
80
3
5 V
4.5 V
0
0
0
0
1
2
3
4
5
50
100
150
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
200
160
120
80
25 °C
175 °C
40
50
0
0
0
2
4
6
8
0
50
100
150
I
D [A]
V
GS [V]
Rev. 0.92
page 5
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=100 A; V GS=10 V
V
parameter: I D
12
10
8
4
3.5
3
2500 µA
250 µA
2.5
2
98 %
6
typ
1.5
1
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
175 °C
25 °C
104
175 °C, 98%
Ciss
102
Coss
103
25 °C, 98%
101
Crss
102
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 0.92
page 6
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=100 A pulsed
V
I
parameter: T j(start)
parameter: V DD
1000
12
40 V
10
8
60 V
20 V
100
10
25 °C
100 °C
150 °C
6
4
2
1
1
0
0
10
100
1000
50
100
150
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
100
95
90
85
80
75
70
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 0.92
page 7
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
PG-TO220-3: Outline
Fo
D
Rev. 0.92
page 8
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
PG-TO262 (I²PAK)
Rev. 0.92
page 9
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
Rev. 0.92
page 10
2008-06-23
IPB051NE8N G IPI054NE8N G
IPP054NE8N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 0.92
page 11
2008-06-23
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