IPL60R095CFD7 [INFINEON]
600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。;型号: | IPL60R095CFD7 |
厂家: | Infineon |
描述: | 600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。 栅 高压 二极管 栅极 |
文件: | 总14页 (文件大小:1195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPL60R095CFD7
MOSFET
ThinPAKꢀ8x8
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe
successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform
tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge
(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Qg),ꢀbest-in-class
reverseꢀrecoveryꢀchargeꢀ(Qrr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™
CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s
fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof
aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation
robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in
process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand
reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity
solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching
topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Features
•ꢀUltra-fastꢀbodyꢀdiode
Power
Source
Pin 3,4
•ꢀLowꢀgateꢀcharge
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdiF/dtꢀruggedness
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies
•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
Potentialꢀapplications
SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging
ProductꢀValidation:ꢀQualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀthe
relevantꢀtestsꢀofꢀJEDEC47/20/22
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
95
Unit
V
mΩ
nC
A
Qg,typ
51
ID,pulse
97
Eoss @ 400V
Body diode diF/dt
5.9
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPL60R095CFD7
PG-VSON-4
60R095F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
25
16.0
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
97
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
114
0.57
5.3
120
20
mJ
mJ
A
ID=5.3A; VDD=50V; see table 10
-
ID=5.3A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
147
150
150
-
W
°C
°C
TC=25°C
Storage temperature
-40
-40
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current
Diode pulse current2)
IS
-
25
A
A
TC=25°C
IS,pulse
-
97
TC=25°C
VDS=0...400V,ꢀISD<=25A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ꢀISD<=25A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.85
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
reflow MSL2A
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.57mA
-
-
-
12
1
47
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.076 0.095
0.172
VGS=10V,ꢀID=11.4A,ꢀTj=25°C
VGS=10V,ꢀID=11.4A,ꢀTj=150°C
RDS(on)
RG
-
-
8
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2103
40
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
73
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
752
37
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=10V,ꢀID=9.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=9.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
14.5
127
5.7
VDD=400V,ꢀVGS=10V,ꢀID=9.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=10V,ꢀID=9.4A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
12
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=9.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
18
Qg
51
Gate plateau voltage
Vplateau
5.6
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=11.4A,ꢀTj=25°C
VR=400V,ꢀIF=9.4A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
103
0.53
8.9
206
1.06
-
ns
VR=400V,ꢀIF=9.4A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=9.4A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
160
103
140
120
100
80
102
101
1 µs
10 µs
100 µs
1 ms
100
60
10-1
10-2
10-3
40
10 ms
DC
20
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
102
101
0.5
0.2
1 µs
10 µs
100 µs
1 ms
0.1
100
10-1
0.05
10-1
10-2
10-3
0.02
0.01
single pulse
10 ms
DC
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
150
100
20 V
20 V
10 V
125
10 V
80
60
40
20
0
8 V
8 V
100
7 V
75
7 V
6 V
50
5.5 V
25
6 V
5.5 V
5 V
4.5 V
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.280
2.5
0.260
7 V
10 V
6 V
6.5 V
5.5 V
2.0
1.5
1.0
0.5
0.240
0.220
0.200
0.180
0.160
0.140
20 V
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=11.4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
150
10
9
8
7
6
5
4
3
2
1
0
25 °C
125
120 V
400 V
100
150 °C
75
50
25
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=9.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
125
100
75
50
25
0
101
125 °C
25 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=5.3ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
105
104
660
630
600
570
540
Ciss
103
102
Coss
101
Crss
100
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
8
6
4
2
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-4,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2018-04-20
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPL60R095CFD7
RevisionꢀHistory
IPL60R095CFD7
Revision:ꢀ2018-04-20,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2018-04-20
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2018-04-20
相关型号:
IPL60R104C7AUMA1
Power Field-Effect Transistor, 20A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
INFINEON
IPL60R105P7AUMA1
Power Field-Effect Transistor, 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
INFINEON
IPL60R115CFD7
600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。
INFINEON
IPL60R125C7
600V CoolMOS™ C7 超级结(SJ)MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗(E oss),在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外,IPL60R185C7也是高功率密度充电器的不二之选!
INFINEON
IPL60R125P7
600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G),确保高效率。
INFINEON
IPL60R140CFD7
600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。
INFINEON
IPL60R160CFD7
600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。
INFINEON
IPL60R180P6
英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率,同时易于在 CoolMOS™ P6 中设计,填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。
INFINEON
IPL60R185CFD7
600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS™ 7 系列。 该 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。
INFINEON
©2020 ICPDF网 联系我们和版权申明