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IPL65R099C7

更新时间：2024-09-18 18:19:59

品牌：INFINEON

描述：Power Field-Effect Transistor, 21A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4

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概述
规格参数
数据手册

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IPL65R099C7 概述

Power Field-Effect Transistor, 21A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 功率场效应晶体管

IPL65R099C7 规格参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, S-PSSO-N4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.7
雪崩能效等级（Eas）：	118 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	650 V
最大漏极电流 (ID)：	21 A	最大漏源导通电阻：	0.099 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	S-PSSO-N4
湿度敏感等级：	2A	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	100 A
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IPL65R099C7 数据手册

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MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

CoolMOS™ꢀC7

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

ThinPAKꢀ8x8

1ꢀꢀꢀꢀꢀDescription

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.

CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ

MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio

providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering

betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand

outstandingꢀreliability.

Features

•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness

Drain

Pin 5

•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀR_DS(on)*E_ossꢀandꢀR_DS(on)*Q_g

•ꢀThinPAKꢀSMDꢀPackageꢀwithꢀveryꢀlowꢀparasiticꢀinductanceꢀtoꢀenableꢀfast

andꢀreliableꢀswitchingꢀwithꢀminimumꢀofꢀsizeꢀtoꢀincreaseꢀpower-density

•ꢀEasyꢀtoꢀuse/driveꢀdueꢀtoꢀdriverꢀsourceꢀpinꢀforꢀbetterꢀcontrolꢀofꢀtheꢀgate.

•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound

Gate

Pin 1

Driver

Source

•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20

andꢀJESD22)

Power

Source

Pin 3,4

Pin 2

Benefits

•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses

•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions

•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements

•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures

Applications

PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,

Telecom,ꢀUPSꢀandꢀSolar.

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g.typ

Value

700

Unit

mΩ

I_D,pulse

100

5.5

E_oss@400V

Body diode di/dt

µJ

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPL65R099C7

PG-VSON-4

65C7099

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

2ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

T_C=25°C

T_C=100°C

Continuous drain current ¹⁾

I_D

Pulsed drain current ²⁾

I_D,pulse

E_AS

E_AR

I_AS

100

118

0.59

8.4

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=8.4A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

100

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

128

150

n.a.

°C

T_C=25°C

Storage temperature

-40

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

100

T_C=25°C

V_DS=0...400V,ꢀI_SD<=I_S,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀ

see table 8

Reverse diode dv/dt ³⁾

dv/dt

1.5

V/ns

V_DS=0...400V,ꢀI_SD<=I_S,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀ

see table 8

Maximum diode commutation speed

Insulation withstand voltage

di_f/dt

A/µs

V_ISO

n.a.

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

^ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀR_G

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.98

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

Thermal resistance, junction - ambient

for SMD version

layer, 70µm thickness) copper

area for drain connection and

cooling. PCB is vertical without air

stream cooling.

R_thJA

°C/W

Reflow soldering temperature

T_sold

260

°C

reflow MSL3

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

650

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

3.5

V_DS=V_GS,ꢀI_D=0.59mA

V_DS=650,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=650,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.088 0.099

0.210

V_GS=10V,ꢀI_D=5.9A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=5.9A,ꢀT_j=150°C

R_DS(on)

R_G

0.9

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

2140

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related ¹⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

763

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time related

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=5.9A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=5.9A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=5.9A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=13ꢀV,ꢀI_D=5.9A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=5.9A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.0

^ꢀ1)ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

^ꢀ2)ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

0.8

V_GS=0V,ꢀI_F=5.9A,ꢀT_j=25°C

V_R=400V,ꢀI_F=21A,ꢀdi_F/dt=60A/µs;

see table 8

700

V_R=400V,ꢀI_F=21A,ꢀdi_F/dt=60A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=21A,ꢀdi_F/dt=60A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

140

10²

1 µs

10 µs

100 µs

1 ms

10 ms

120

100

10¹

10⁰

10^-1

10^-2

10^-3

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10²

10⁰

10 µs

1 µs

100 µs

1 ms

0.5

10 ms

10¹

0.2

0.1

10⁰

10^-1

0.05

10^-1

10^-2

10^-3

0.02

0.01

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

120

20 V

8 V

10 V

7 V

100

10 V

8 V

6 V

7 V

5.5 V

6 V

5 V

5.5 V

5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.30

0.25

6.5 V

5.5 V

6 V

7 V

0.23

0.21

0.19

0.17

0.15

0.28

0.26

0.24

0.22

0.20

0.18

0.16

0.14

20 V

10 V

98%

0.13

typ

0.11

0.09

0.07

0.05

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=5,9ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

120

120 V

400 V

100

25 °C

150 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=5.9ꢀAꢀpulsed;ꢀparameter:ꢀV_DDꢀ

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10²

120

100

10¹

125 °C

25 °C

10⁰

10^-1

0.0

0.5

1.0

1.5

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=8.4ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

760

10⁵

740

720

700

680

660

640

620

600

580

10⁴

Ciss

10³

10²

Coss

10¹

Crss

10⁰

-60

-20

100

140

180

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

500

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

6ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

V,I

V_DS

R_g1

V_DS(peak)

V_DS

t_rr

V_DS

I_F

t_F

t_S

dI_F/ dt

R_g2

I_F

10%I_rrm

I_F

dI / dt

t_rr=t_F+t_S

I_rrm

Q =Q_F+Q

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

7ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-4,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

8ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOS^TMꢀC7ꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOS^TMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOS^TMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPL65R099C7

RevisionꢀHistory

IPL65R099C7

Revision:ꢀ2013-11-05,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

2.0

Subjects (major changes since last revision)

Release of final version

2013-11-05

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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

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Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2013-11-05

IPL65R099C7 相关器件

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