IPP018N10N5 [INFINEON]
The IPP018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard TO-220 package for through-hole assembly. OptiMOS™ 5 power MOSFET in TO-220 targets light electric vehicles and battery management systems.;![IPP018N10N5](http://pdffile.icpdf.com/pdf2/p00362/img/icpdf/IPP018N10N5_2217993_icpdf.jpg)
型号: | IPP018N10N5 |
厂家: | ![]() |
描述: | The IPP018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard TO-220 package for through-hole assembly. OptiMOS™ 5 power MOSFET in TO-220 targets light electric vehicles and battery management systems. |
文件: | 总11页 (文件大小:1675K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPP018N10N5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
TO-220-3
tab
Features
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀOptimizedꢀforꢀFOMOSS
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 3
VDS
100
V
RDS(on),max
ID
1.83
205
mΩ
A
Qoss
213
nC
nC
QG
168
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP018N10N5
PG-TO220-3
018N10N5
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
205
158
33
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10V,TA=25°C,RthJA=40°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
820
TC=25ꢀ°C
-
1166 mJ
ID=100ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
20
V
-
-
-
-
-
375
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.4
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.0
3.8
VDS=VGS,ꢀID=270ꢀµA
-
-
0.1
10
7.0
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance1)
IDSS
µA
nA
IGSS
-
1.0
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.7
2.0
1.83
2.2
VGS=10ꢀV,ꢀID=100ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance2)
Transconductance
RG
gfs
-
1.3
2.0
-
Ω
-
130
260
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance2)
Output capacitance2)
Reverse transfer capacitance2)
Ciss
Coss
Crss
-
-
-
12000 16000 pF
1800 2300 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
80
33
140
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
26
77
29
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics3)ꢀ
Values
Typ.
53
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Gate charge total2)
Gate plateau voltage
Output charge2)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=50ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
36
-
34
51
-
Qsw
51
Qg
168
4.5
210
-
Vplateau
Qoss
213
283
nC
1)
R
DS(on)
is specified at a distance of 1.8 mm to the package body; mounting at a larger distance increases the overall package
resistance of approximately 0.04 mOhm/mm per leg
2) Defined by design. Not subject to production test.
3) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
205
820
1.0
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.89
99
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
198
574
ns
nC
Qrr
287
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
240
350
300
250
200
150
100
50
200
160
120
80
40
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
single pulse
0.01
10 µs
0.02
0.05
0.1
0.2
0.5
100 µs
102
101
100
1 ms
10-1
10-2
10-3
DC
100
10-1
10-2
10 ms
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
6
10 V
7 V
8 V
700
6 V
5
600
4
4.5 V
500
400
300
5 V
3
6 V
2
7 V
8 V
5 V
200
100
0
10 V
1
4.5 V
0
0
1
2
3
4
5
0
100
200
300
400
500
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
5
700
600
500
400
300
200
100
0
4
3
2
25 °C
175 °C
175 °C
25 °C
1
0
0
1
2
3
4
5
6
7
0
3
6
9
12
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
4.0
3.5
3.0
2.5
2.0
1.6
1.2
0.8
0.4
0.0
2700 µA
270 µA
1.5
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
25 °C, max
175 °C
175 °C, max
104
103
102
101
Ciss
102
101
100
Coss
Crss
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
20 V
50 V
80 V
8
6
4
2
0
102
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
25
50
75
100
125
150
175
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-03-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPP018N10N5
RevisionꢀHistory
IPP018N10N5
Revision:ꢀ2022-03-28,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2022-02-16
2022-03-28
Update Rds(on) max at Vgs=10V
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-03-28
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/IPP020N08N5_1555993_files/IPP020N08N5_1555993_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/IPP020N08N5_1555993_files/IPP020N08N5_1555993_2.jpg)
IPP020N08N5
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00317/img/page/SP001132480_1905849_files/SP001132480_1905849_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00317/img/page/SP001132480_1905849_files/SP001132480_1905849_2.jpg)
IPP020N08N5AKSA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IPP023N04N-G_2247973_files/IPP023N04N-G_2247973_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IPP023N04N-G_2247973_files/IPP023N04N-G_2247973_2.jpg)
IPP023N04N G
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机。此外,这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00313/img/page/IPP023N04NGX_1881074_files/IPP023N04NGX_1881074_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00313/img/page/IPP023N04NGX_1881074_files/IPP023N04NGX_1881074_2.jpg)
IPP023N04NGXKSA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPP023N08N5_2206179_files/IPP023N08N5_2206179_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPP023N08N5_2206179_files/IPP023N08N5_2206179_2.jpg)
IPP023N08N5
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00267/img/page/IPP023N08N5A_1605967_files/IPP023N08N5A_1605967_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00267/img/page/IPP023N08N5A_1605967_files/IPP023N08N5A_1605967_2.jpg)
IPP023N08N5AKSA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00318/img/page/IPP023N10N5_1911025_files/IPP023N10N5_1911025_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00318/img/page/IPP023N10N5_1911025_files/IPP023N10N5_1911025_2.jpg)
IPP023N10N5
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPP023N10N5A_1613218_files/IPP023N10N5A_1613218_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPP023N10N5A_1613218_files/IPP023N10N5A_1613218_2.jpg)
IPP023N10N5AKSA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf1/p00134/img/page/IPP02_741842_files/IPP02_741842_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00134/img/page/IPP02_741842_files/IPP02_741842_2.jpg)
IPP023NE7N3G
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
INFINEON
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