IPP147N12N3G [INFINEON]
OptiMOS?3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | IPP147N12N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS?3 Power-Transistor |
| 文件： | 总11页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
120
14.7
56
V
• N-channel, normal level
R DS(on),max
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
Package
Marking
PG-TO263-3
144N12N
PG-TO262-3
147N12N
PG-TO220-3
147N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T A=25 °C,
I D
Continuous drain current
56
41
A
R
thJA=45 K/W
T C=100 °C
I D=56 A, V DS=80 V,
di /dt =100 A/µs,
Pulsed drain current2)
I D,pulse
224
T
j,max=175 °C
E AS
I D=56 A, R GS=25 Ω
T C=25 °C
Avalanche energy, single pulse
90
±20
mJ
V
Gate source voltage3)
V GS
P tot
Power dissipation
107
W
°C
T j, T stg
Operating and storage temperature
-55 ... 175
55/175/56
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 2.6
page 1
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1.4
62
40
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
120
2
-
-
V
V GS(th)
V DS=V GS, I D=61 µA
3
4
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V
DS=100 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=56 A,
R DS(on)
Drain-source on-state resistance
12.3
14.4
mΩ
(TO263)
V GS=10 V, I D=56 A,
-
-
12.6
1.2
62
14.7
(TO220, TO262)
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=56 A
,
Transconductance
31
S
2
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.6
page 2
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
2420
304
17
16
9
3220 pF
V GS=0 V, V DS=60 V,
f =1 MHz
C oss
C rss
t d(on)
t r
404
-
-
-
-
-
ns
V
DD=60 V, V GS=10 V,
I D=56 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
24
4
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
13
9
-
-
nC
Q gd
V DD=60 V, I D=56 A,
GS=0 to 10 V
Q sw
Q g
15
37
5.5
42
-
V
Gate charge total
49
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=60 V, V GS=0 V
55
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
56
A
T C=25 °C
I S,pulse
224
V GS=0 V, I F=56 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
-
V
t rr
Reverse recovery time
-
-
91
ns
V R=60 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
259
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.6
page 3
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
120
100
80
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
1 µs
102
10 µs
100
100 µs
0.5
1 ms
DC
101
0.2
10 ms
0.1
0.05
10-1
0.02
100
0.01
single pulse
10-1
10-2
10-1
100
101
V DS [V]
102
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.6
page 4
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
25
10 V
5 V
8 V
5.5 V
20
15
10
5
7 V
6 V
150
6.5 V
10 V
100
50
0
6 V
5.5 V
5 V
4.5 V
0
0
1
2
3
4
5
0
20
40
ID [A]
60
80
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80
70
60
50
40
30
20
10
0
80
60
40
20
0
175 °C
25 °C
0
2
4
6
8
0
10
20
30
40
50
60
V GS [V]
ID [A]
Rev. 2.6
page 5
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=56 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
35
30
25
4
3.5
3
610 µA
61 µA
2.5
2
20
98 %
15
10
5
typ
1.5
1
0.5
0
0
-60
-20
20
60
T j [°C]
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
25 °C
Coss
175 °C
25 °C, 98%
175 °C, 98%
102
101
Crss
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.6
page 6
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=56 A pulsed
V
I
parameter: T j(start)
parameter: V DD
102
10
96 V
8
6
4
2
60 V
25 °C
24 V
100 °C
101
150 °C
100
100
0
0
101
102
103
10
20
30
40
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
135
130
125
120
115
110
105
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.6
page 7
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO220-3: Outline
Rev. 2.6
page 8
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO262-3-1 (I²PAK)
Rev. 2.6
page 9
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO-263 (D²-Pak)
Rev. 2.6
page 10
2010-01-22
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6
page 11
2010-01-22
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