IPP60R022S7 [INFINEON]
凭借降低传导损耗的优化设计，采用 TO-220 的 600V CoolMOS™ S7 superjunction MOSFET (IPP60R022S7) 在低开关频率应用中实现最佳 RDS(on) x 成本，例如有源桥式整流器、倒相级、浪涌继电器、PLC、HV DC 线、电源固态继电器和固态断路器等应用。600V CoolMOS™ S7 SJ MOSFET 实现更高能效，降低 BOM 费用。;
| 型号： | IPP60R022S7 |
| 厂家： | 
Infineon |
| 描述： | 凭借降低传导损耗的优化设计，采用 TO-220 的 600V CoolMOS™ S7 superjunction MOSFET (IPP60R022S7) 在低开关频率应用中实现最佳 RDS(on) x 成本，例如有源桥式整流器、倒相级、浪涌继电器、PLC、HV DC 线、电源固态继电器和固态断路器等应用。600V CoolMOS™ S7 SJ MOSFET 实现更高能效，降低 BOM 费用。 开关 继电器 固态继电器 断路器 |
| 文件： | 总14页 (文件大小：1633K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP60R022S7
MOSFET
PG-TOꢀ220
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7ꢀenablesꢀtheꢀbestꢀpriceꢀperformanceꢀforꢀlowꢀfrequency
switchingꢀapplications.ꢀCoolMOS™ꢀS7ꢀboastsꢀtheꢀlowestꢀRdsonꢀvaluesꢀfor
aꢀHVꢀSJꢀMOSFET,ꢀwithꢀdistinctiveꢀincreaseꢀofꢀenergyꢀefficiency.
tab
CoolMOS™ꢀS7ꢀisꢀoptimizedꢀforꢀ“staticꢀswitching”ꢀandꢀhighꢀcurrent
applications.ꢀItꢀisꢀanꢀidealꢀfitꢀforꢀsolidꢀstateꢀrelayꢀandꢀcircuitꢀbreakerꢀdesigns
asꢀwellꢀasꢀforꢀlineꢀrectificationꢀinꢀSMPSꢀandꢀinverterꢀtopologies.
Features
•ꢀCoolMOS™ꢀS7ꢀtechnologyꢀenablesꢀ22mΩꢀRDS(on)ꢀinꢀtheꢀsmallestꢀfootprint
•ꢀOptimizedꢀpriceꢀperformanceꢀinꢀlowꢀfrequencyꢀswitchingꢀapplications
•ꢀHighꢀpulseꢀcurrentꢀcapability
Drain
•ꢀTO220ꢀpackageꢀwithꢀtotalꢀPb-freeꢀdieꢀattach
Pin 2, Tab
*1
Benefits
Gate
Pin 1
•ꢀMinimizedꢀconductionꢀlossesꢀ(eliminateꢀ/ꢀreduceꢀheatꢀsink)
•ꢀIncreasedꢀsystemꢀperformance
•ꢀMoreꢀcompactꢀandꢀeasierꢀdesign
Source
Pin 3
*1: Internal body diode
•ꢀLowerꢀBOMꢀor/andꢀTCOꢀoverꢀprolongedꢀlifeꢀtime
Comparedꢀtoꢀelectromechanicalꢀdevices:
•ꢀFasterꢀswitchingꢀtimes
•ꢀMoreꢀreliabilityꢀandꢀlongerꢀsystemꢀlifeꢀtime
•ꢀShockꢀ&ꢀVibrationꢀresistance
•ꢀNoꢀcontactꢀarcing,ꢀbouncingꢀorꢀdegradationꢀoverꢀlifeꢀtime
Potentialꢀapplications
•ꢀSolidꢀstateꢀrelaysꢀandꢀcircuitꢀbreakers
•ꢀLineꢀrectificationꢀinꢀhighꢀpower/performanceꢀapplicationsꢀe.g.ꢀComputing,
Telecom,ꢀUPSꢀandꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
RDS(on),max
Qg,typ
Value
Unit
mΩ
nC
V
22
150
0.83
375
VSD
Pulsed ISD, IDS
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP60R022S7
PG-TO220-3
60R022S7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
Drain current rating
ID
-
-
23
A
current capability
Pulsed drain current1)
ID,pulse
EAS
IAS
-
-
-
-
-
-
-
-
-
-
-
375
289
3.8
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness2)
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
A
ID=3.8A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=ꢀ0Vꢀtoꢀ300V
-20
-30
-
20
V
static
30
V
AC (f>1 Hz)
390
150
150
60
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
Diode forward current rating
IS
-
-
23
A
current capability
Diode pulse current1)
Reverse diode dv/dt3)
IS,pulse
-
-
-
-
375
5
A
TC=25°C
VDS=0ꢀtoꢀ300V,ꢀISD<=23A,ꢀTj=25°Cꢀꢀꢀ
dv/dt
V/ns
see table 8
VDS=0ꢀtoꢀ300V,ꢀISD<=23A,ꢀTj=25°Cꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
820
n.a.
A/µs
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Pulse width tp limited by Tj,max
2) The dv/dt has to be limited by appropriate gate resistor
3) Identical low side and high side switch
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.32
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer
evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the
necessary technical support by Infineon
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=1mA
4.0
4.5
VDS=VGS,ꢀID=1.44mA
-
-
-
50
5
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.02
0.047
0.022
-
VGS=12V,ꢀID=23A,ꢀTj=25°C
VGS=12V,ꢀID=23A,ꢀTj=150°C
RDS(on)
RG
-
0.80
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
5639
89
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
-
303
-
pF
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Effective output capacitance, time
related2)
Co(tr)
Qoss
td(on)
-
-
-
2678
803
30
-
-
-
pF
nC
ns
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ300V
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Output charge
VDD=300V,ꢀVGS=13V,ꢀID=23A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
VDD=300V,ꢀVGS=13V,ꢀID=23A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Rise time
tr
-
-
-
9
-
-
-
ns
ns
ns
VDD=300V,ꢀVGS=13V,ꢀID=23A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
150
9
VDD=300V,ꢀVGS=13V,ꢀID=23A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
31
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=300V,ꢀID=23A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=23A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=23A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=23A,ꢀVGS=0ꢀtoꢀ12V
Qgd
50
Qg
150
5.4
Gate plateau voltage
Vplateau
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.83
-
V
VGS=0V,ꢀIF=23A,ꢀTj=25°C
VR=300V,ꢀIF=23A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
460
9
-
-
-
ns
VR=300V,ꢀIF=23A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=300V,ꢀIF=23A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
40
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
400
103
1 µs
10 µs
100 µs
350
300
250
200
150
100
50
1 ms
102
10 ms
DC
101
100
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
100 µs
1 ms
102
101
10 ms
DC
0.5
100
10-1
0.2
10-1
10-2
10-3
0.1
0.05
0.01
0.02
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
600
350
8 V
300
250
10 V
500
10 V
12 V
20 V
12 V
400
8 V
20 V
200
300
200
100
0
150
100
50
0
0
4
8
12
16
20
0
4
8
12
16
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.060
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0.055
20 V
0.050
12 V
8 V
10 V
0.045
0.040
0.035
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=23.0ꢀA;ꢀVGS=12ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
600
12
25 °C
500
400
300
200
100
0
10
8
300 V
120 V
6
150 °C
4
2
0
0
2
4
6
8
10
12
0
40
80
120
160
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=23.0ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
103
102
102
25 °C
125 °C
101
101
25 °C
125 °C
100
100
10-1
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSDꢀ[V]
VSDꢀ[V]
IF=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj
IF=f(VSD);ꢀVGS=12ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
300
680
660
640
620
600
580
560
540
250
200
150
100
50
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tjꢀ[°C]
Tjꢀ[°C]
EAS=f(Tj);ꢀID=3.8ꢀA;ꢀVDD=50ꢀV
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
105
900
800
700
600
500
400
300
200
100
0
104
Ciss
103
Coss
102
Crss
101
0
50
100
150
200
250
300
0
50
100
150
200
250
300
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Qoss=f(VDS);ꢀVGS=0ꢀV
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀS7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2021-10-25
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
RevisionꢀHistory
IPP60R022S7
Revision:ꢀ2021-10-25,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2019-05-07
2021-10-25
Change of wording regarding breakdown voltage / cosmic ray
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2021-10-25
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