IPP60R520E6XKSA1 [INFINEON]

Power Field-Effect Transistor, 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN;


型号：	IPP60R520E6XKSA1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN 局域网开关脉冲晶体管
文件：	总16页 (文件大小：1055K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

CoolMOS™ꢀE6ꢀ600V

600VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor

IPx60R520E6

DataꢀSheet

Rev.ꢀ2.2

Final

PowerꢀManagementꢀ&ꢀMultimarket

600V CoolMOS" E6 Power Transistor

IPP60R520E6, IPA60R520E6

Description

CoolMOS" is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS" E6 series

combines the experience of the leading SJ MOSFET supplier with

high class innovation. The offered devices provide all benefits of a

fast switching SJ MOSFET while not sacrificing ease of use.

Extremely low switching and conduction losses make switching

applications even more efficient, more compact, lighter, and cooler.

drain

pin 2

Features

gate

pin 1

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

JEDEC¹⁾qualified, Pb-free plating, halogen free

source

pin 3

Applications

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

Please note: For MOSFET paralleling the use of ferrite beads on

the gate or separate totem poles is generally recommended.

Table 1

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

Value

650

0.52

23.4

Unit

I_D,pulse

E_oss@ 400V

Body diode di/dt

2.1

µJ

A/µs

500

Type / Ordering Code

IPA60R520E6

Package

Marking

Related Links

PG-TO220 FullPAK

PG-TO220

6R520E6

IFX CoolMOS Webpage

IFX Design tools

IPP60R520E6

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Min. Typ. Max.

Unit Note / Test Condition

Continuous drain current¹⁾

I_D

8.1

5.1

T_C= 25 °C

T_C= 100°C

T_C=25 °C

Pulsed drain current²⁾

I_D,pulse

E_AS

Avalanche energy, single pulse

153

I_D=1.4 A,V_DD=50 V

(see table 21)

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

E_AR

I_AR

0.23

1.4

I_D=1.3 A,V_DD=50 V

dv/dt

V_GS

V/ns V_DS=0...480 V

-20

-30

static

AC (f>1 Hz)

T_C=25 °C

Power dissipation for

TO-220

P_tot

°C

Power dissipation for

TO-220 FullPAK

P_tot

T_C=25 °C

Operating and storage temperature T_j,T_stg

-55

150

Mounting torque

TO-220

Ncm M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

M2.5 screws

Continuous diode forward current

Diode pulse current²⁾

Reverse diode dv/dt³⁾

I_S

T_C=25 °C

I_S,pulse

dv/dt

V/ns V_DS=0...400 V,I_SD" I_D,

T_j=25 °C

Maximum diode commutation

speed³⁾

di_f/dt

500

A/µs (see table 22)

1) Limited by T_j,max.Maximum duty cycle D=0.75

2) Pulse width t_plimited by T_j,max

3) Identical low side and high side switch with identical R_G

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Thermal characteristics

Table 3

Thermal characteristics TO-220 (IPP60R520E6)

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

1.9

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 4

Thermal characteristics TO-220FullPAK (IPA60R520E6)

Symbol Values

Typ.

Parameter

Unit

Note /

Test Condition

Min.

Max.

4.3

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 5

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

600

2.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=0.25 mA

V_DS=V_GS, I_D=0.23mA

Gate threshold voltage

V_GS(th)

I_DSS

3.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.47

0.52

V_GS=10 V, I_D=2.8 A,

T_j=25 °C

1.22

V_GS=10 V, I_D=2.8A,

T_j=150 °C

Gate resistance

R_G

f=1 MHz, open drain

Table 6

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

512

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

related²⁾

100

I_D=constant, V_GS=0 V

V_DS=0...480V

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD=400 V,

V_GS=13 V, I_D=3.5 A,

R_G= 6.8 !

Turn-off delay time

Fall time

(see table 20)

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics

Table 7

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

2.8

V_DD=480 V, I_D=3.5A,

V_GS=0 to 10 V

Q_gd

Q_g

23.4

5.4

Gate plateau voltage

V_plateau

Table 8

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=3.5A,

T_j=25 °C

Reverse recovery time

t_rr

260

2.5

µC

V_R=400 V, I_F=3.5A,

di_F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Table 9

Power dissipation

TO-220

Power dissipation

TO-220 FullPAK

P_tot= f(T_C)

Table 10

Max. transient thermal impedance

TO-220

Max. transient thermal impedance

TO-220 FullPAK

Z_(thJC)=f(tp); parameter: D=t_p/T

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Table 11

Safe operating area T_C=25 °C

TO-220

TO-220 FullPAK

I_D=f(V_DS); T_C=25 °C; D=0; parameter t_p

Table 12

Safe operating area T_C=80 °C

TO-220

TO-220 FullPAK

I_D=f(V_DS); T_C=80 °C; D=0; parameter t_p

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Table 13

Typ. output characteristics T_C=25 °C

Typ. output characteristics T_j=125 °C

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

I_D=f(V_DS); T_j=125 °C; parameter: V_GS

Table 14

Typ. drain-source on-state resistance

Drain-source on-state resistance

R_DS(on)=f(I_D); T_j=125 °C; parameter: V_GS

R_DS(on)=f(T_j); I_D=2.8 A; V_GS=10 V

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Table 15

Typ. transfer characteristics

Typ. gate charge

I_D=f(V_GS); V_DS=20V

V_GS=f(Q_gate), I_D=3.5 A pulsed

Table 16

Avalanche energy

Drain-source breakdown voltage

E_AS=f(T_j); I_D=1.4 A; V_DD=50 V

V_BR(DSS)=f(T_j); I_D=0.25 mA

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Table 17

Typ. capacitances

Typ. C_ossstored energy

C=f(V_DS); V_GS=0 V; f=1 MHz

E_OSS=f(V_DS)

Table 18

Forward characteristics of reverse diode

I_F=f(V_SD); parameter: T_j

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Test circuits

Table 19

Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load

Switching time waveform

V_DS

90%

V_DS

V_GS

10%

V_GS

t_d(off)

t_d(on)

t_on

t_f

t_r

t_off

Table 20

Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Table 21

Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

I_D

₎#/$

($ " $

. )

R_G1

(

)

V_DS

%$!

--,

R_G2

)

--,

/#₀₀#/$

--,

'$!

--,

R_G1= R_G2

.*+$$$&&

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Package outlines

Figure 1

Outlines TO-220, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2010-04-09

Rev. 2.2, 2014-12-10

6**M =^^[FGKm #6 H^fTa LaP]bXbc^a

IP(%!'"!!#%

/45<487 @DC=;?7B

/,..,/*6*45

,0(+*5

),/

MIN

4.50

2.34

2.42

0.65

0.95

0.65

0.40

MAX

4.90

2.85

2.86

0.90

1.38

1.51

1.38

1.51

0.63

16.15

9.83

10.65

MIN

MAX

0.193

0.112

0.113

0.035

0.054

0.059

0.054

0.059

0.025

0.636

0.387

0.419

)1(7/*06 01"

Z8B00003319

0.177

0.092

0.095

0.026

0.037

0.026

0.016

0.617

0.353

0.394

5('.*

;

2.5

5mm

)

15.67

8.97

*7412*'0 241-*(6,10

10.00

2.54 (BSC)

0.100 (BSC)

5.08

0.200

28.70

12.78

2.83

29.75

13.75

3.45

1.130

0.503

0.111

0.116

0.124

1.171

0.541

0.136

0.133

0.138

,557* )'6*

05-05-2014

4*8,5,10

2.95

3.38

3.15

3.50

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Final Data Sheet

Rev. 2.25, 2014-12-1009

600VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor

IPx60R520E6

RevisionꢀHistory

IPx60R520E6

Revision:ꢀ2015-02-09,ꢀRev.ꢀ2.2

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.0

2.1

2.2

Release final data sheet

2011-06-08

2011-09-14

2015-02-09

PG-TO220 FullPAK package outline update (creation:2014-12-10)

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Rev.ꢀ2.2,ꢀꢀ2015-02-09

IPP60R520E6XKSA1 [INFINEON]

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