IPS021 [INFINEON]
FULLY PROTECTED POWER MOSFET SWITCH; 充分保护功率MOSFET开关
| 型号： | IPS021 |
| 厂家： | 
Infineon |
| 描述： | FULLY PROTECTED POWER MOSFET SWITCH |
| 文件： | 总11页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No.PD 60148-K
( )
IPS021 S
FULLY PROTECTED POWER MOSFET SWITCH
Features
Product Summary
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
R
V
150mΩ (max)
ds(on)
50V
5A
clamp
I
shutdown
Description
T T
1.5µs
on/ off
The IPS021/IPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
®
active clamp.These devices combine a HEXFET
Packages
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
3-Lead D2Pak
IPS021S
3-Lead TO-220
IPS021
Typical Connection
Load
R in series
(if needed)
D
S
IN
control
Logic signal
(Refer to lead assignment for correct pin configuration)
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1
IPS021(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
print with 70 µm copper thickness.
= 25oC unless otherwise specified). PCB mounting uses the standard foot-
Ambient
Symbol Parameter
Min.
Max.
Units
Test Conditions
V
Maximum drain to source voltage
—
47
ds
V
V
Maximum input voltage
-0.3
-10
7
in
I
I
Maximum IN current
+10
mA
in, max
sd cont.
(1)
Diode max. continous current
(rth=62oC/W) IPS021
(rth=10oC/W) IPS021
(rth=80oC/W) IPS021S
—
—
—
—
2.8
8
A
2.2
10A
(1)
I
Diode max. pulsed current
sd pulsed
(1)
P
d
Maximum power dissipation
(rth=62oC/W) IPS021
(rth=80oC/W) IPS021S
—
—
2
W
1.56
4
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
C=100pF, R=1500Ω,
kV
oC
—
0.5
150
150
300
C=200pF, R=0Ω, L=10µH
T
T
T
-55
-40
—
stor.
max. Max. junction temperature.
j
Lead temperature (soldering, 10 seconds)
lead
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
R
R
1
2
Thermal resistance free air
Thermal resistance junction to case
—
—
60
5
—
—
—
—
—
th
th
TO-220
th
th
th
oC/W
R
R
R
1
2
3
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
—
—
—
80
50
5
2
D PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
V
V
V
(max) Continuous drain to source voltage
35
—
4
ds
IH
IL
High level input voltage
Low level input voltage
6
V
A
0
0.5
1.8
I
Continuous drain current
—
ds
Tamb=85oC
(
o
o
o
TAmbient = 85 C, IN = 5V, rth = 60 C/W, Tj = 125 C)
R
in
Recommended resistor in series with IN pin
0.5
—
0
5
1
1
k
µ
S
Ω
T
Max recommended rise time for IN signal (see fig. 2)
Max. frequency in short circuit condition (Vcc = 14V)
r-in (max)
(2)
F -I
r sc
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
2
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IPS021(S)
Static Electrical Characteristics
Standard footprint 70 µm copper thickness. T = 25oC (unless otherwise specified.)
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
ON state resistance T = 25oC
100
—
0
130
220
0.01
0.1
150
280
25
R
ds(on)
j
V
= 5V, I = 1A
mΩ
µA
in
ds
T
j
= 150oC
I
I
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
V
= 14V, T = 25oC
j
dss 1
dss 2
cc
cc
0
50
V
I
= 40V, T = 25oC
j
V clamp 1
56
= 20mA (see Fig.3 & 4)
48
50
54
56
8
1.5
90
130
d
I =I
d
(see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2
shutdown
= 1 mA
60
9.5
2
V
I
V
V
IN to source clamp voltage
IN threshold voltage
clamp
7
1
in
d
in
th
,
I
= 50mA, V = 14V
ds
25
50
I
I
ON state IN positive current
ON state IN positive current
200
250
V
V
= 5V
in -on
in, -off
in
µA
= 5V
in
over-current triggered
Switching Electrical Characteristics
V
= 14V, Resistive Load = 10Ω, Rinput = 50Ω, 100µs pulse, T = 25oC, (unless otherwise specified).
j
cc
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
T
T
Turn-on delay time
0.5
0.9
6
0.15
0.4
2
1
on
r
See figure 2
Rise time
2
Time to (final R
1.3)
ds(on)
12
3.5
2.5
—
rf
µs
T
Turn-off delay time
2
0.8
0.5
—
off
See figure 2
T
Fall time
1.3
3.3
f
Q
Total gate charge
nC
V
in
= 5V
in
Protection Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
165
5.5
2.3
10
oC See fig. 1
—
4
—
7
sd
I
A
See fig. 1
sd
V
1.5
3
V
µs
reset
T
V
in
= 0V, Tj = 25oC
2
40
—
reset
EOI_OT Short circuit energy (see application note)
400
µJ
V
cc
= 14V
—
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3
IPS021(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
Ω
200 k
1000Ω
IN
S
Q
Q
8.1 V
R
I sense
T > 165°c
I > Isd
µ
80 A
SOURCE
Lead Assignments
2 (D)
2 (D)
1
3
In D S
1
2
3
In
D
S
TO-220
D2PAK (SMD220)
IPS021
IPS021S
Part Number
4
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IPS021(S)
5 V
0 V
Vin
90 %
10 %
Vin
Ids
Tr-in
t > T reset
t < T reset
Ids
90 %
10 %
I shutdown
Isd
Td on
Td off
tf
tr
T
T shutdown
Vds
Tsd
(165 °c)
Figure 2 - IN rise time & switching time definitions
Figure 1 - Timing diagram
T clamp
L
V load
Rem : V load is negative
during demagnetization
+
14 V
-
R
D
S
Ids
Vin
Vds clamp
IN
Vds
5 v
0 v
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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5
IPS021(S)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
300
250
200
150
100
50
200%
180%
160%
140%
120%
100%
80%
Tj = 150oC
Tj = 25oC
60%
40%
20%
0%
0
-50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
Figure 6 - Normalized Rds(on) (%) Vs Tj (oC)
10
4
3
2
1
0
ton delay
rise time
130% rdson
toff delay
fall time
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
to 130% final Rds
(us) Vs Input Voltage (V)
(on)
6
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IPS021(S)
1 0 0
1 0
1
1 0 0
1 0
1
delay off
fall time
delay on
rise time
130% rdson
0 .1
0 .1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
10
100
1000
10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time
Figure 10 - Turn-OFF Delay Time & Fall Time (us)
to 130% final Rds(on) (us) Vs IN Resistor (Ω)
Vs IN Resistor (Ω)
8
6
4
6
5
4
3
2
1
0
2
Isd 25°C
Ilim 25°C
0
0
1
2
3
4
5
6
7
8
-50 -25
0
25 50 75 100 125 150
Figure 11 - Current Iim. & I shutdown (A)
Vs Vin (V)
Figure 12 - I shutdown (A) Vs Temperature (oC)
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7
IPS021(S)
8
100
10
1
rth = 5°C/W
rth = 15°C/W
1" footprint 35°C/W
std. footprint 60°C/W
T=25°C Std. footprint
T=100°C Std. footprint
7
6
5
4
3
2
1
0
Current path capability
should be above this curve
Load characteristic should
be below this curve
-50
0
50
100
150
200
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
IPS021 & IPS021S
Figure 13 - Max.Cont. Ids (A)
Vs Amb. Temperature (oC) IPS021/IPS021S
single pulse
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
single pulse m ax. current
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
10
10
1
1
Vbat = 14 V
Tjini = T sd
Vbat = 14 V
Tjini = T sd
0.1
0 .0 1
0.1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
Figure 15b - Max. Iclamp (A) Vs Inductive Load
(mH) IPS021S
Figure 15a - Iclamp (A) Vs Inductive Load (mH)
IPS021
8
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IPS021(S)
1 0 0
1 0
200
180
160
140
120
100
80
1
60
Single pulse
0 .1
0 .0 1
Iin,on
Iin,off
40
20
0
-50 -25
0
25 50 75 100 125 150
Figure 16 - Transient Thermal Imped. (oC/W)
Vs Time (s)
Figure 17 - Input Current (uA) Vs
Junction Temperature (oC)
16
14
12
10
8
120%
Treset
115%
110%
105%
100%
95%
rise time
fall time
6
4
90%
Vds clamp @ Isd
2
85%
Vin clamp @ 10mA
0
80%
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Figure 19 -Vin clamp and Vds clamp (%) Vs
Tj (oC)
Figure 18 - Rise Time, Fall Time and Treset (µs)
Vs Tj (oC)
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9
IPS021(S)
Case Outline
2
NOTES:
2X
01-6024 00
IRGB 01-3026 01 (TO-220AB)
3-Lead TO-220AB
01-6022 00
01-0016 05 (TO-263AB)
2
3-Lead D PAK
10
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IPS021(S)
Tape & Reel - D2PAK (SMD220)
01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/11/2001
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11
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