IPT012N08NF2S [INFINEON]

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.;
IPT012N08NF2S
型号: IPT012N08NF2S
厂家: Infineon    Infineon
描述:

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.

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IPT012N08NF2S  
MOSFET  
StrongIRFETTMꢀ2ꢀPower-Transistor  
TOLL  
Tab  
Features  
Tab  
•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications  
•ꢀN-Channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
1
2
3
8
4
7
5
6
6
5
4
7
3
8
2
1
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Drain  
Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Gate  
Pin 1  
VDS  
80  
V
RDS(on),max  
ID  
1.23  
351  
199  
170  
m  
A
Source  
Pin 2-8  
Qoss  
nC  
nC  
QG  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
012N08NS  
RelatedꢀLinks  
IPT012N08NF2S  
PG-HSOF-8  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
351  
248  
211  
39  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=6ꢀV,ꢀTC=100ꢀ°C  
VGS=10V,TA=25°C,RthJA=40°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
1404  
374  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=150ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
300  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.5  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
-
-
-
-
40  
62  
Thermal resistance, junction - ambient,  
minimal footprint  
RthJA  
°C/W -  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.2  
3.0  
3.8  
VDS=VGS,ꢀID=267ꢀµA  
-
-
0.1  
10  
1
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.1  
1.3  
1.23  
1.8  
VGS=10ꢀV,ꢀID=150ꢀA  
VGS=6ꢀV,ꢀID=75ꢀA  
RDS(on)  
mΩ  
Gate resistance  
Transconductance1)  
RG  
gfs  
-
1.4  
-
-
-
-
135  
S
|VDS|2|ID|RDS(on)max,ꢀID=100ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
12000 -  
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
1900  
83  
-
-
Reverse transfer capacitance  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
25  
72  
72  
44  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
53  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=40ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
36  
-
35  
-
Qsw  
53  
-
Qg  
170  
4.4  
255  
Vplateau  
Qoss  
-
-
199  
nC  
1) Defined by design. Not subject to production test.  
2) See Gate charge waveformsfor parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
214  
1404  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.85  
48  
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs  
VR=40ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
383  
-
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
320  
400  
280  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
40  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
single pulse  
0.01  
0.02  
1 µs  
103  
102  
101  
100  
10-1  
10-2  
0.05  
0.1  
0.2  
0.5  
10 µs  
100  
100 µs  
1 ms  
10-1  
10-2  
10-3  
10 ms  
DC  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1500  
3.2  
10 V  
8 V  
7 V  
2.8  
1250  
1000  
750  
500  
250  
0
4.5 V  
2.4  
2.0  
5 V  
6 V  
1.6  
1.2  
0.8  
0.4  
0.0  
6 V  
7 V  
8 V  
10 V  
5 V  
4.5 V  
0
1
2
3
4
5
0
100  
200  
300  
400  
500  
600  
700  
800  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1500  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1250  
1000  
750  
500  
250  
0
175 °C  
25 °C  
175 °C  
25 °C  
0
1
2
3
4
5
6
7
0
3
6
9
12  
15  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=150ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
4.0  
3.5  
3.0  
2.5  
1.6  
1.2  
0.8  
0.4  
0.0  
2670 µA  
2.0  
267 µA  
1.5  
1.0  
0.5  
0.0  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=150ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
104  
25 °C  
175 °C  
104  
103  
102  
101  
Ciss  
103  
102  
101  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
70  
80  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
16 V  
40 V  
64 V  
8
6
4
2
0
102  
25 °C  
100 °C  
150 °C  
101  
100  
100  
101  
102  
103  
0
25  
50  
75  
100  
125  
150  
175  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
88  
86  
84  
82  
80  
78  
76  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-HSOF-8-U03  
MILLIMETERS  
DIMENSIONS  
MIN.  
2.20  
0.70  
9.70  
0.40  
10.28  
3.15  
9.70  
7.35  
MAX.  
2.40  
0.90  
9.90  
0.60  
10.58  
3.45  
10.10  
7.65  
A
b
b1  
c
D
D1  
E
E1  
E2  
E3  
e
8.50  
9.46  
1.20 (BSC)  
H
11.48  
11.98  
6.95  
H1  
H2  
H3  
H4  
N
6.55  
7.35  
3.59  
3.26  
8
4.03  
1.60  
0.55  
0.45  
1.00  
2.90  
4.33  
2.10  
0.85  
0.75  
1.30  
3.10  
K
L
L1  
L2  
L3  
P
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2022-08-08  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPT012N08NF2S  
RevisionꢀHistory  
IPT012N08NF2S  
Revision:ꢀ2022-08-08,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2022-07-20  
2022-08-08  
Update current for Rds(on)  
Trademarks  
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2022-08-08  

相关型号:

IPT013N08NM5LF

IPT013N08NM5LF 是英飞凌 OptiMOS™ 5 线性 FET 80 V 系列中的出色型号,采用无引脚 TO (TOLL) 封装,在 25˚C 温度下可实现业界最低的导通电阻 RDS(on) 和宽安全工作区 (SOA)。OptiMOS™ 线性 FET 这一突破性方案实现了导通电阻与线性模式能力间的出色平衡。搭配 TOLL 封装,IPT013N08NM5LF 主要面向高浪涌电流的严苛要求应用,如热插拔和电熔丝,以及常见于电信和电池管理系统 (BMS) 的保护应用。
INFINEON

IPT014N10N5

The IPT014N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.4 mOhm, 100 V in a TO-Leadless (TOLL) package with a high current capability of 362 A (ID @25˚C). OptiMOS™ 5 power MOSFET in TOLL targets power tools, light electric vehicles and battery management systems.
INFINEON

IPT015N10N5

Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
INFINEON

IPT015N10NF2S

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency.
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IPT0170

Optoelectronic
ETC

IPT017N10NF2S

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.
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IPT017N12NM6

This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance.  IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
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IPT019N08N5

Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
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IPT01A

MIL Series Connector, Aluminum Alloy, Female; Male, Crimp; Solder Terminal, Receptacle
GLENAIR

IPT01A18-11PCF2

MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
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IPT01A18-11PCPH13.5F6

MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
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IPT01A18-11PCPH13.5F8

MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle
GLENAIR