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IPT60R035CFD7 [INFINEON]

600V CoolMOS™ CFD7 是英飞凌推出的新型高压超结 MOSFET 技术，具有集成快速体二极管，完善了CoolMOS™ 7系列。 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更为出色的关断性能。此外，其反向恢复电荷(Qrr)远低于市场上的竞争性产品，降幅高达 69%。不仅如此，它还具有市场上较短的反向恢复时间(trr)。;
IPT60R035CFD7
型号： IPT60R035CFD7
厂家： Infineon    Infineon
描述：

600V CoolMOS™ CFD7 是英飞凌推出的新型高压超结 MOSFET 技术，具有集成快速体二极管，完善了CoolMOS™ 7系列。 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更为出色的关断性能。此外，其反向恢复电荷(Qrr)远低于市场上的竞争性产品，降幅高达 69%。不仅如此，它还具有市场上较短的反向恢复时间(trr)。

栅 高压 二极管 栅极
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中文：  中文翻译
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IPT60R035CFD7  
MOSFET  
HSOF  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe  
successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform  
tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge  
(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Qg),ꢀbest-in-class  
reverseꢀrecoveryꢀchargeꢀ(Qrr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™  
CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s  
fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof  
aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation  
robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in  
process.  
Tab  
Tab  
1
2
3
8
4
7
6
5
6
7
5
4
8
3
2
1
Drain  
Tab  
Features  
*1  
Gate  
Pin 1  
•ꢀUltra-fastꢀbodyꢀdiode  
•ꢀLowꢀgateꢀcharge  
Driver  
Source  
Pin 2  
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdiF/dtꢀruggedness  
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages  
Source  
Pin 3-8  
*1: Internal body diode  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀruggedness  
•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies  
•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
Potentialꢀapplications  
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies  
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,  
Telecom,ꢀEVꢀCharging  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET  
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe  
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
Unit  
650  
V
35  
mΩ  
nC  
A
Qg,typ  
108  
ID,pulse  
212  
Eoss @ 400V  
Body diode diF/dt  
12.5  
1300  
µJ  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPT60R035CFD7  
PG-HSOF-8  
60R035F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
67  
42  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
212  
249  
1.25  
7.3  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
mJ  
mJ  
A
ID=7.3A; VDD=50V; see table 10  
-
ID=7.3A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
120  
20  
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
347  
150  
150  
n.a.  
67  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm -  
Continuous diode forward current1)  
Diode pulse current2)  
IS  
-
A
A
TC=25°C  
IS,pulse  
-
212  
TC=25°C  
VDS=0...400V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
-
-
70  
V/ns  
VDS=0...400V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
Insulation withstand voltage  
diF/dt  
-
-
-
-
1300 A/µs  
n.a.  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical RG  
Final Data Sheet  
3
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.36  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
RthJA  
-
-
35  
-
45  
°C/W  
Soldering temperature, wave- & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL1  
Final Data Sheet  
4
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
4
4.5  
VDS=VGS,ꢀID=1.25mA  
-
-
-
26  
1
103  
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=125°C  
Zero gate voltage drain current1)  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.027 0.035  
0.062  
VGS=10V,ꢀID=24.9A,ꢀTj=25°C  
VGS=10V,ꢀID=24.9A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
3.8  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
4346  
85  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related2)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
156  
1604  
29  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related3)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=10V,ꢀID=15.6A,  
RG=3.0Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=10V,ꢀID=15.6A,  
RG=3.0Ω;ꢀseeꢀtableꢀ9  
23  
VDD=400V,ꢀVGS=10V,ꢀID=15.6A,  
RG=3.0Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
111  
5
VDD=400V,ꢀVGS=10V,ꢀID=15.6A,  
RG=3.0Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
24  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=15.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.6A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
39  
Qg  
108  
5.4  
Gate plateau voltage  
Vplateau  
1) Maximum specification is defined by calculated six sigma upper confidence bound  
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
1.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=24.9A,ꢀTj=25°C  
VR=400V,ꢀIF=15.6A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
155  
0.87  
9.9  
232  
1.74  
-
ns  
VR=400V,ꢀIF=15.6A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=15.6A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
350  
103  
1 µs  
300  
250  
200  
150  
100  
50  
102  
101  
10 µs  
100 µs  
1 ms  
100  
10 ms  
DC  
10-1  
10-2  
10-3  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
102  
101  
10 µs  
100 µs  
0.5  
1 ms  
100  
10-1  
0.2  
10 ms  
DC  
10-1  
10-2  
10-3  
0.1  
0.05  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
400  
250  
20 V  
10 V  
350  
20 V  
10 V  
200  
150  
100  
50  
8 V  
300  
250  
200  
150  
100  
50  
8 V  
7 V  
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V 5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.110  
2.5  
7 V  
2.0  
1.5  
1.0  
0.5  
0.090  
0.070  
0.050  
6.5 V  
6 V  
5.5 V  
10 V  
20 V  
0
50  
100  
150  
200  
250  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=24.9ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
400  
12  
400 V  
120 V  
350  
10  
8
25 °C  
300  
250  
200  
6
150 °C  
150  
100  
50  
4
2
0
0
0
2
4
6
8
10  
12  
0
20  
40  
60  
80  
100  
120  
140  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=15.6ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
103  
300  
250  
200  
150  
100  
50  
102  
125 °C  
101  
25 °C  
100  
10-1  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=7.3ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
690  
105  
660  
630  
600  
570  
540  
104  
Ciss  
103  
102  
101  
100  
Coss  
Crss  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
20  
15  
10  
5
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
1) partially covered with Mold Flash  
MILLIMETERS  
INCHES  
DIM  
MIN  
2.20  
0.70  
9.70  
0.42  
0.40  
10.28  
MAX  
2.40  
0.90  
9.90  
0.50  
0.60  
10.58  
MIN  
MAX  
0.094  
0.035  
0.390  
0.020  
0.024  
0.416  
A
b
0.087  
0.028  
0.382  
0.017  
0.016  
0.405  
DOCUMENT NO.  
Z8B00176939  
b1  
b2  
c
0
SCALE  
D
D2  
E
3.30  
0.130  
2
9.70  
10.10  
0.382  
0.398  
E1  
E4  
E5  
e
7.50  
8.50  
0.295  
0.335  
0
2
4mm  
9.46  
1.20 (BSC)  
0.372  
0.047 (BSC)  
H
11.48  
6.55  
11.88  
6.75  
0.452  
0.258  
0.468  
0.266  
EUROPEAN PROJECTION  
H1  
H2  
H3  
H4  
N
7.15  
3.59  
3.26  
8
0.281  
0.141  
0.128  
8
K1  
L
4.18  
0.165  
ISSUE DATE  
28-04-2015  
1.40  
0.50  
0.50  
1.00  
2.62  
1.80  
0.90  
0.70  
1.30  
2.81  
0.055  
0.020  
0.020  
0.039  
0.103  
0.071  
0.035  
0.028  
0.051  
0.111  
L1  
L2  
L4  
L5  
REVISION  
01  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀCFD7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀCFD7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀCFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.3,ꢀꢀ2020-10-05  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPT60R035CFD7  
RevisionꢀHistory  
IPT60R035CFD7  
Revision:ꢀ2020-10-05,ꢀRev.ꢀ2.3  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2.1  
2.2  
2.3  
2020-04-22  
2020-06-23  
2020-08-28  
2020-10-05  
Changed diode commutation speed current  
Changed trr and Qrr value  
Changed diagram 2, 3, 7, 8, 9; Changed typical static and dynamic parameters  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
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AllꢀRightsꢀReserved.  
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(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
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Final Data Sheet  
14  
Rev.ꢀ2.3,ꢀꢀ2020-10-05  

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