IPT60R145CFD7 [INFINEON]
600V CoolMOS™ CFD7 是英飞凌推出的新型高压超结 MOSFET 技术，具有集成快速体二极管，完善了CoolMOS™ 7系列。 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更为出色的关断性能。此外，其反向恢复电荷(Qrr)远低于市场上的竞争性产品，降幅高达 69%。不仅如此，它还具有市场上较短的反向恢复时间(trr)。;
| 型号： | IPT60R145CFD7 |
| 厂家： | 
Infineon |
| 描述： | 600V CoolMOS™ CFD7 是英飞凌推出的新型高压超结 MOSFET 技术，具有集成快速体二极管，完善了CoolMOS™ 7系列。 CoolMOS™ CFD7 拥有更低的栅极电荷(Qg)和更为出色的关断性能。此外，其反向恢复电荷(Qrr)远低于市场上的竞争性产品，降幅高达 69%。不仅如此，它还具有市场上较短的反向恢复时间(trr)。 栅 高压 二极管 栅极 |
| 文件： | 总14页 (文件大小：1267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPT60R145CFD7
MOSFET
HSOF
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe
successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform
tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge
(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Qg),ꢀbest-in-class
reverseꢀrecoveryꢀchargeꢀ(Qrr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™
CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s
fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof
aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation
robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in
process.
Tab
Tab
1
2
3
8
4
7
6
5
6
7
5
4
8
3
2
1
Drain
Tab
Features
*1
Gate
Pin 1
•ꢀUltra-fastꢀbodyꢀdiode
•ꢀLowꢀgateꢀcharge
Driver
Source
Pin 2
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdiF/dtꢀruggedness
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages
Source
Pin 3-8
*1: Internal body diode
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies
•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
Potentialꢀapplications
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
145
28
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
51
Eoss @ 400V
Body diode diF/dt
3.2
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPT60R145CFD7
PG-HSOF-8
60R145F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
19
12
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
51
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
60
mJ
mJ
A
ID=3.8A; VDD=50V; see table 10
-
0.30
3.8
120
20
ID=3.8A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
116
150
150
n.a.
19
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current1)
Diode pulse current2)
IS
-
A
A
TC=25°C
IS,pulse
-
51
TC=25°C
VDS=0...400V,ꢀISD<=14A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ꢀISD<=14A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.08
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.3mA
-
-
-
7
1
37
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.114 0.145
0.259
VGS=10V,ꢀID=6.0A,ꢀTj=25°C
VGS=10V,ꢀID=6.0A,ꢀTj=150°C
RDS(on)
RG
-
-
10.9
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1199
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
40
401
23
13
83
5
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=10V,ꢀID=7.3A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=7.3A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=10V,ꢀID=7.3A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=10V,ꢀID=7.3A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=7.3A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.3A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.3A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.3A,ꢀVGS=0ꢀtoꢀ10V
Qgd
9
Qg
28
Gate plateau voltage
Vplateau
5.7
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=6.0A,ꢀTj=25°C
VR=400V,ꢀIF=7.3A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
92
138
0.72
-
ns
VR=400V,ꢀIF=7.3A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.36
7.1
µC
A
VR=400V,ꢀIF=7.3A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
150
140
130
120
110
100
90
102
1 µs
10 µs
101
100
100 µs
1 ms
80
70
60
10-1
10-2
10-3
10 ms
DC
50
40
30
20
10
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
101
100
10 µs
100
100 µs
1 ms
0.5
0.2
0.1
10-1
10-2
10-3
10-1
0.05
0.02
0.01
10 ms
DC
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
100
60
90
20 V
10 V
20 V
10 V
8 V
50
40
30
20
10
0
80
8 V
70
7 V
60
50
40
7 V
30
20
6 V
5.5 V
6 V
10
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.450
2.5
0.400
2.0
1.5
1.0
0.5
7 V
20 V
6.5 V
6 V
5.5 V
0.350
0.300
0.250
0.200
10 V
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=6.0ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
100
12
10
8
400 V
120 V
80
25 °C
60
6
150 °C
40
4
20
0
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
40
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=7.3ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
70
60
50
40
30
20
10
0
101
125 °C
25 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=3.8ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
105
104
660
630
600
570
540
Ciss
103
102
Coss
101
Crss
100
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
5
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1) partially covered with Mold Flash
MILLIMETERS
INCHES
DIM
MIN
2.20
0.70
9.70
0.42
0.40
10.28
MAX
2.40
0.90
9.90
0.50
0.60
10.58
MIN
MAX
0.094
0.035
0.390
0.020
0.024
0.416
A
b
0.087
0.028
0.382
0.017
0.016
0.405
DOCUMENT NO.
Z8B00176939
b1
b2
c
0
SCALE
D
D2
E
3.30
0.130
2
9.70
10.10
0.382
0.398
E1
E4
E5
e
7.50
8.50
0.295
0.335
0
2
4mm
9.46
1.20 (BSC)
0.372
0.047 (BSC)
H
11.48
6.55
11.88
6.75
0.452
0.258
0.468
0.266
EUROPEAN PROJECTION
H1
H2
H3
H4
N
7.15
3.59
3.26
8
0.281
0.141
0.128
8
K1
L
4.18
0.165
ISSUE DATE
28-04-2015
1.40
0.50
0.50
1.00
2.62
1.80
0.90
0.70
1.30
2.81
0.055
0.020
0.020
0.039
0.103
0.071
0.035
0.028
0.051
0.111
L1
L2
L4
L5
REVISION
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.3,ꢀꢀ2020-10-19
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor
IPT60R145CFD7
RevisionꢀHistory
IPT60R145CFD7
Revision:ꢀ2020-10-19,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2.2
2.3
2020-04-22
2020-06-23
2020-08-28
2020-10-19
Changed diode commutation speed current
Changed trr and Qrr value
Changed diagram 2, 3, 7, 8, 9; Changed typical static and dynamic parameters
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Final Data Sheet
14
Rev.ꢀ2.3,ꢀꢀ2020-10-19
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