IPU20N03L [INFINEON]
OptiMOS Buck converter series; 的OptiMOS降压转换器系列
| 型号： | IPU20N03L |
| 厂家： | 
Infineon |
| 描述： | OptiMOS Buck converter series |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD20N03L
IPU20N03L
OptiMOS Buck converter series
Product Summary
Feature
V
30
20
30
V
DS
• N-Channel
R
mΩ
A
DS(on)
• Logic Level
I
D
• Low On-Resistance R
DS(on)
P- TO251 -3-1
P- TO252 -3-11
• Excellent Gate Charge x R
product (FOM)
DS(on)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converters
Type
Package
Ordering Code
Marking
20N03L
20N03L
IPD20N03L
P- TO252 -3-11
Q67042-S4050
IPU20N03L
P- TO251 -3-1
Q67042-S4106
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
1)
A
Continuous drain current
I
D
T =25°C
30
30
C
120
15
Pulsed drain current
I
D puls
T =25°C
C
mJ
Avalanche energy, single pulse
E
AS
I =15A, V =25V, R =25Ω
D
DD
GS
2)
E
6
6
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =30A, V =24V, di/dt=200A/µs, T
DS
=175°C
jmax
S
Gate source voltage
Power dissipation
V
V
±20
60
GS
P
W
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2003-01-17
IPD20N03L
IPU20N03L
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
R
-
-
1.7
-
2.5
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
thJC
R
100
thJA
SMD version, device on PCB:
R
thJA
@ min. footprint
-
-
-
-
75
50
2
3)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
30
max.
Static Characteristics
V
-
-
V
Drain-source breakdown voltage
(BR)DSS
V
=0V, I =1mA
GS
D
1.2
1.6
2
Gate threshold voltage, V = V
V
GS
DS
GS(th)
I =25µA
D
µA
Zero gate voltage drain current
I
DSS
V
V
=30V, V =0V, T =25°C
GS
-
-
0.01
10
1
DS
DS
j
=30V, V =0V, T =125°C
GS
100
j
-
-
-
1
100
31
nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
GS DS
22.9
15.5
Drain-source on-state resistance
R
mΩ
DS(on)
V
=4.5V, I =15A
GS
D
20
Drain-source on-state resistance
R
DS(on)
V
=10V, I =15A
GS
D
1
Current limited by bondwire ; with an R
= 2.5K/W the chip is able to carry I = 42A at 25°C, for detailed
D
thJC
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17
IPD20N03L
IPU20N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
V
≥2*I *R
DS DS(on)max
,
14
28
-
S
fs
D
I =30A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
GS DS
-
-
-
530
200
60
700
275
90
pF
iss
oss
rss
G
f=1MHz
C
C
R
-
-
-
-
-
1.3
6.2
11
23
18
-
Ω
t
t
t
t
V
=15V, V =10V,
DD GS
9.3
17
34
27
ns
d(on)
r
I =15A,
D
R =12.7Ω
G
Turn-off delay time
Fall time
d(off)
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=15V, I =15A
-
-
-
2.5
6.4
8.4
3.1
9.6
11
nC
gs
gd
g
DD
D
V
V
=15V, I =15A,
Gate charge total
DD
D
=0 to 5V
GS
V
V
=15V, I =15A,
Output charge
Q
V
-
-
8
10
-
nC
V
DS
D
oss
=0V
GS
V
=15V, I =15A
3.6
Gate plateau voltage
DD
D
(plateau)
Reverse Diode
T =25°C
-
-
30
A
Inverse diode continuous
forward current
I
S
C
I
-
-
-
-
-
1.1
15
2
120
1.4
18
3
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
SM
V
=0V, I =30A
V
V
GS
F
SD
t
V =15V, I =l ,
ns
nC
rr
R
F S
di /dt=100A/µs
F
Reverse recovery charge
Q
rr
Page 3
2003-01-17
IPD20N03L
IPU20N03L
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V ≥ 10 V
GS
IPD20N03L
IPD20N03L
65
32
W
A
55
50
45
40
35
30
25
20
15
10
5
24
20
16
12
8
4
0
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
C
T
C
3 Safe operating area
I = f ( V
4 Max. transient thermal impedance
)
Z
= f (t )
D
DS
thJC p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
10 3
IPD20N03L
IPD20N03L
K/W
A
10 0
t
= 35.0µs
100 µs
p
10 2
10 -1
10 -2
10 -3
D = 0.50
0.20
10 1
0.10
0.05
1 ms
0.02
0.01
10 ms
single pulse
DC
10 0
10 -1
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 1
10 2
10 0
V
s
t
V
p
DS
Page 4
2003-01-17
IPD20N03L
IPU20N03L
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
GS
p
IPD20N03L
Ptot = 60W
IPD20N03L
65
mΩ
75
A
c
d
e
V
[V]
GS
a
55
50
45
40
35
30
25
20
15
10
5
h
g
f
3.0
3.5
60
55
50
45
40
35
30
25
20
15
10
5
b
c
d
e
f
4.0
e
4.5
5.0
6.0
d
g
h
7.0
10.0
f
g
h
c
a
b
V
[V] =
d
GS
c
e
f
g
h
4.0 4.5 5.0 6.0 7.0 10.0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
10
20
30
40
50
65
V
A
I
V
DS
D
7 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
60
30
A
S
50
45
40
35
30
25
20
15
10
5
20
15
10
5
0
0
0
0
1
2
3
4
5.5
GS
5
10
15
20
30
V
V
A
I
D
Page 5
2003-01-17
IPD20N03L
IPU20N03L
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 15 A, V = 10 V
parameter: V = V
DS
D
GS
GS
IPD20N03L
50
3
mΩ
V
40
35
30
25
20
15
10
5
0.868mA
2
1.5
1
98%
typ
25µA
0.5
0
0
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
180
°C
T
T
j
j
11 Typ. capacitances
C = f (V
12 Forward character. of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 4
10 3
IPD20N03L
pF
A
10 3
10 2
10 1
10 2
C
iss
C
oss
10 1
C
rss
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0
5
10
15
20
30
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
V
SD
DS
Page 6
2003-01-17
IPD20N03L
IPU20N03L
13 Typ. avalanche energy
= f (T )
15 Drain-source breakdown voltage
V = f (T )
(BR)DSS
E
AS
j
j
par.: I = 15 A, V = 25 V, R = 25 Ω
parameter: I =10 mA
D
DD
GS
D
IPD20N03L
36
16
V
mJ
34
33
32
31
30
29
28
27
12
10
8
6
4
2
0
25
45
65
85 105 125 145
185
-60
-20
20
60
100
140
200
°C
°C
T
T
j
j
14 Typ. gate charge
= f (Q
V
)
Gate
GS
parameter: I = 15 A pulsed
D
IPD20N03L
16
V
12
10
0.2 VDS max
8
0.5 VDS max
0.8 VDS max
6
4
2
0
nC
21
0
2
4
6
8
10 12 14 16 18
Q
Gate
Page 7
2003-01-17
IPD20N03L
IPU20N03L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-01-17
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