IPU50R1K4CE [INFINEON]
500V CoolMOS⢠CE Power MOSFET; 500V CoolMOSâ ?? ¢ CE功率MOSFET
| 型号： | IPU50R1K4CE |
| 厂家： | 
Infineon |
| 描述： | 500V CoolMOS⢠CE Power MOSFET |
| 文件： | 总2页 (文件大小：1164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Brief
Features
Reduced energy stored in output
capacitance (Eoss
)
500V CoolMOS™ CE Power MOSFET
High body diode ruggedness
Reduced reverse recovery charge (Qrr)
Reduced gate charge (Qg)
The CoolMOS™ CE is a new technology platform of Infineon’s market leading
high voltage power MOSFETs designed according to the revolutionary
superjunction (SJ) principle.
Benefits
Easy control of switching behavior
Improved light load efficiency
500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use. As the complete CE series, devices achieve extremely
low conduction and switching losses and can make switching applications
more efficient, more compact, lighter and cooler.
compared to previous CoolMOS™
generations
Cost attractive alternative compared
to standard MOSFETs
Outstanding reliability with proven
CoolMOS™ quality combined with
high body diode ruggedness
Efficiency comparison 500V CoolMOS™ CE vs competitor standard MOSFET
CCM PFC stage, 90VAC up to 400W
Applications
IPP50R280CE vs. Standard MOS
efficiency @ VIN=90VAC; plug&play scenario;
Rg,ext=5Ω ; f=100kHz; VOUT=400VDC
IPP50R280CE vs. Standard MOS
delta efficiency @ VIN=90VAC; plug&play scenario;
Rg,ext=5Ω ; f=100kHz; VOUT=400VDC
Consumer
Lighting
98
97
96
95
94
93
92
91
90
0,6
0,4
PC Silverbox
IPP50R280CE
Standard MOS
IPP50R280CE
Standard MOS
0,2
0,0
50 100 150 200 250 300 350 400
-0,2
-0,4
-0,6
-0,8
-1,0
40% Qg reduction
POUT [W]
POUT [W]
www.infineon.com/ce
Product Brief
500V CoolMOS™ CE Power MOSFET
IPP50R500CE vs. Standard MOS
hard commutation on conducting body diode; half bridge configuration
High Side MOS = Low Side MOS, same RG,sum = 5Ω
Simplified test circuit
500
SW
490
480
470
460
450
440
430
420
410
400
RG,ext
IF
IPP50R500CE
Standard MOS
DUT
VDS
145µH
RG,ext
ISD
simplified waveform when switching ON of High Side
MOSFET for 2nd time (double pulse)
ISD
VDS max
dIF / dt
IF
12V lower drain
source overshoot
400V
t
0A
0V
dIrr / dt
Imm
VDS
t
0
1
2
3
4
5 6
7
From IF=1 to IF=4A better behaviour observed of 500V CE
IF > 4A same behaviour
IF , forward current through body diode [A]
Body diode conduction < 2µs before turn-off
Product Portfolio CoolMOS™ CE
IPAK
TO-220
FullPAK
TO-252
DPAK
TO-220
TO-247
RDS(on)
3000 mΩ
2000 mΩ
1400 mΩ
950 mΩ
800 mΩ
650 mΩ
500 mΩ
380 mΩ
280 mΩ
190 mΩ
IPD50R3k0CE*
IPD50R2k0CE**
IPD50R1k4CE*
IPD50R950CE
IPD50R800CE*
IPD50R650CE*
IPD50R500CE
IPD50R380CE*
IPD50R280CE
IPU50R3k0CE*
IPU50R2k0CE**
IPU50R1k4CE*
IPU50R950CE*
IPA50R950CE
IPA50R800CE*
IPA50R650CE*
IPA50R500CE
IPA50R380CE*
IPA50R280CE
IPA50R190CE*
IPP50R500CE
IPP50R380CE*
IPP50R280CE
IPP50R190CE*
IPW50R280CE
IPW50R190CE*
Applications Consumer
Consumer, Lighting
PC Silverbox
PC Silverbox
SSL: Solid State Lighting
* Samples available by Q3 / 2012
** Samples available by Q4 / 2012
Published by
ATTEꢀTꢁOꢀ ꢂꢃEASE!
WAꢄꢀꢁꢀgS
Infineon Technologies Austria AG
9500 Villach, Austria
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warran-
ties and liabilities of any kind, including without limita-
tion warranties of non-infringement of intellectual property
rights of any third party.
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
© 2012 Infineon Technologies AG.
All Rights Reserved.
written approval of Infineon Technologies, if
a failure of
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such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reason-
able to assume that the health of the user or other persons
may be endangered.
ꢁꢀFOꢄMATꢁOꢀ
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Order Number: B152-H9688-X-X-7600-DB2012-0003
Date: 10 / 2012
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