IPW65R099CFD7A [INFINEON]

TO-247 引脚封装中的 99mOhm IPW65R099CFD7A是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。;


型号：	IPW65R099CFD7A
厂家：	Infineon
描述：	TO-247 引脚封装中的 99mOhm IPW65R099CFD7A是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。
文件：	总14页 (文件大小：1551K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPW65R099CFD7A

MOSFET

PG-TOꢀ247-3

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading

automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe

well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe

automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan

integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant

switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.

Tab

Features

•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody

diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQ_rr

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀ100%ꢀavalancheꢀtested

Drain

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Pin 2, Tab

Benefits

Gate

Pin 1

•ꢀOptimizedꢀforꢀhigherꢀbatteryꢀvoltagesꢀupꢀtoꢀ475ꢀVꢀthanksꢀtoꢀfurther

improvedꢀrobustness

•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies

•ꢀHighꢀqualityꢀandꢀreliability

Source

Pin 3

*1: Internal body diode

•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions

Potentialꢀapplications

SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:

•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,

•ꢀOn-BoardꢀbatteryꢀChargers

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀAECꢀQ101

Pleaseꢀnote:ꢀForꢀproductionꢀpartꢀapprovalꢀprocessꢀ(PPAP)ꢀreleaseꢀwe

proposeꢀtoꢀshareꢀapplicationꢀrelatedꢀinformationꢀduringꢀanꢀearlyꢀdesign

phaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.ꢀPleaseꢀcontactꢀInfineonꢀsales

office.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

650

Unit

V_DS

R_DS(on),max

Q_g,typ

mΩ

I_D,pulse

107

6.8

E_oss@ 400V

Body diode di_F/dt

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

65A099F7

RelatedꢀLinks

IPW65R099CFD7A

PG-TO247-3

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

I_AS

107

125

5.0

120

T_C=25°C

Avalanche energy, single pulse

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=5.0A; V_DD=50V; see table 10

dv/dt

V_GS

V_GS,pulse

P_tot

V/ns V_DS=0...400V

-20

-30

static;

f_repetition<=100kHz, t_pulse<= 2ns

127

150

°C

T_C=25°C

Storage temperature

T_stg

T_j

-55

-40

Operating junction temperature

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

107

V_DS=0...400V,ꢀI_SD<=12.5A,ꢀT_j=25°Cꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

di_F/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=12.5A,ꢀT_j=25°Cꢀꢀ

Maximum diode commutation speed

1300 A/µs

see table 8

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

T_sold

0.98

°C/W -

Soldering temperature, wavesoldering

only allowed at leads

260

°C

1.6mm (0.063 in.) from case for 10s

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

For applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of

cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical

support by Infineon.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

650

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage¹⁾

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.5

V_DS=V_GS,ꢀI_D=0.63mA

V_DS=650V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=650V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

0.1

V_GS=20V,ꢀV_DS=0V

0.082 0.099

0.183

V_GS=10V,ꢀI_D=12.5A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=12.5A,ꢀT_j=150°C

R_DS(on)

R_G

5.9

Ω

f=250kHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

External parasitic elements (PCB layout) influence switching behavior significantly.

Stray inductances and coupling capacitances must be minimized.

For layout recommendations please use provided application notes or contact Infineon sales office.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

2513

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related²⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

894

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related³⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=12.5A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=12.5A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=12.5A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=13V,ꢀI_D=12.5A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

¹⁾We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of

potential “linear mode”, please contact Infineon sales office.

²⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

³⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=12.5A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.1

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=12.5A,ꢀT_j=25°C

V_R=400V,ꢀI_F=12.5A,ꢀdi_F/dt=100A/µs;

see table 8

147

0.78

9.8

V_R=400V,ꢀI_F=12.5A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=12.5A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

150

10³

10²

10¹

10⁰

10^-1

10^-2

125

100

1 µs

10 µs

100 µs

1 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10¹

10²

10¹

1 µs

10⁰

10 µs

0.5

0.2

10⁰

100 µs

1 ms

0.1

10^-1

0.05

0.02

10^-1

0.01

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

175

100

20 V

150

125

100

10 V

8 V

7 V

6 V

5.5 V

6 V

5 V

5.5 V

5 V

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.300

2.5

0.270

0.240

2.0

1.5

1.0

0.5

7 V

5.5 V

6 V

10 V

0.210

0.180

0.150

6.5 V

20 V

100

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=12.5ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

160

25 °C

140

120

100

120 V

400 V

150 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=12.5ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10²

125

100

10¹

10⁰

25 °C

125 °C

10^-1

0.0

0.3

0.6

0.9

1.2

1.5

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=5.0ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

750

10⁵

10⁴

10³

10²

10¹

10⁰

720

690

660

630

600

Ciss

Coss

Crss

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

500

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

6ꢀꢀꢀꢀꢀPackageꢀOutlines

MILLIMETERS

MAX.

DIMENSIONS

MIN.

4.70

2.20

1.50

1.00

1.60

2.57

0.38

20.70

13.08

0.51

15.50

12.38

3.40

1.00

5.30

2.60

2.50

1.40

2.41

3.43

0.89

21.50

17.65

1.35

16.30

14.15

5.10

2.60

DOCUMENT NO.

Z8B00003327

REVISION

SCALE 3:1

0 1 2 3 4

5mm

EUROPEAN PROJECTION

5.44

19.80

3.85

3.50

5.35

6.04

20.40

4.50

3.70

6.25

6.30

ISSUE DATE

25.07.2018

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀCFD7AꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7Aꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7Aꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPW65R099CFD7A

RevisionꢀHistory

IPW65R099CFD7A

Revision:ꢀ2021-11-22,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2.1

2020-03-25

2021-11-22

Change of wording regarding breakdown voltage / cosmic ray

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Dueꢀtoꢀtechnicalꢀrequirementsꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀplease

contactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

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InfineonꢀTechnologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support

deviceꢀorꢀsystem,ꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀareꢀintended

toꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbody,ꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.

Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2021-11-22

IPW65R099CFD7A [INFINEON]

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