IPW90R1K2C3FKSA1 [INFINEON]
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3;型号: | IPW90R1K2C3FKSA1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 局域网 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:645K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
相关型号:
IPW90R340C3FKSA1
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON
IPW90R340C3XK
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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IPW90R500C3FKSA1
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
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IPW90R800C3FKSA1
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
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IPW95R060PFD7
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
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IPW95R130PFD7
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R130PFD7 in the TO-247 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
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IPWS65R022CFD7A
采用 TO-247-3 封装的 22 MΩ IPWS65R022CFD7A 为车规 650 V CoolMOS™ 超结功率 MOSFET CFD7A 系列产品。与上代产品相比,CoolMOS™ CFD7A 的可靠性更强,功率密度更高,为设计带来了更大的灵活性
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IPWS65R035CFD7A
35mOhm IPWS65R035CFD7A,采用 TO-247-3 短引线封装,是通过汽车级认证的 650V CoolMOS™ 超结功率 MOSFET CFD7A 产品系列的一部分。与上一代产品相比,CoolMOS™ CFD7A它在提高设计灵活性的同时,也提高了可靠性和功率密度。
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